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Many-particle induced band renormalization processes in few- and mono-layer MoS2.
Yue, Yuan-Yuan; Wang, Zhuo; Wang, Lei; Wang, Hai-Yu; Chen, Yang; Wang, Dan; Chen, Qi-Dai; Gao, Bing-Rong; Wee, Andrew T S; Qiu, Cheng-Wei; Sun, Hong-Bo.
Afiliación
  • Yue YY; State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, People's Republic of China.
  • Wang Z; International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China.
  • Wang L; State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, People's Republic of China.
  • Wang HY; Department of Electrical & Computer Engineering, National University of Singapore, Singapore 117583, Singapore.
  • Chen Y; State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, People's Republic of China.
  • Wang D; State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, People's Republic of China.
  • Chen QD; State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, People's Republic of China.
  • Gao BR; State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, People's Republic of China.
  • Wee ATS; State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, People's Republic of China.
  • Qiu CW; Department of Physics, National University of Singapore, Singapore 117542, Singapore.
  • Sun HB; Department of Electrical & Computer Engineering, National University of Singapore, Singapore 117583, Singapore.
Nanotechnology ; 32(13)2021 Jan 08.
Article en En | MEDLINE | ID: mdl-33427201

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Revista: Nanotechnology Año: 2021 Tipo del documento: Article

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Revista: Nanotechnology Año: 2021 Tipo del documento: Article