Influence of growth temperature on dielectric strength of Al<sub>2</sub>O<sub>3</sub> thin films prepared via atomic layer deposition at low temperature.

Influence of growth temperature on dielectric strength of Al₂O₃ thin films prepared via atomic layer deposition at low temperature.

Kim, Suyeon; Lee, Seung-Hun; Jo, In Ho; Seo, Jongsu; Yoo, Yeong-Eun; Kim, Jeong Hwan.

Afiliación

Kim S; Department of Materials Science and Engineering, Hanbat National University, Daejeon, 34158, Republic of Korea.
Lee SH; Department of Materials Science and Engineering, Hanbat National University, Daejeon, 34158, Republic of Korea.
Jo IH; Department of Materials Science and Engineering, Hanbat National University, Daejeon, 34158, Republic of Korea.
Seo J; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea.
Yoo YE; Department of Nano Manufacturing Technology, Korea Institute of Machinery and Materials (KIMM), Daejeon, 34103, Republic of Korea. yeyoo@kimm.re.kr.
Kim JH; Department of Materials Science and Engineering, Hanbat National University, Daejeon, 34158, Republic of Korea. jkim@hanbat.ac.kr.

Sci Rep ; 12(1): 5124, 2022 Mar 24.

Article en En | MEDLINE | ID: mdl-35332219

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2022 Tipo del documento: Article

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2022 Tipo del documento: Article