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A novel high-low-high Schottky barrier based bidirectional tunnel field effect transistor.
Jin, Xiaoshi; Zhang, Shouqiang; Li, Mengmeng; Liu, Xi; Li, Meng.
Afiliación
  • Jin X; School of Information Science and Engineering, Shenyang University of Technology, Shenyang, 110870, China.
  • Zhang S; School of Information Science and Engineering, Shenyang University of Technology, Shenyang, 110870, China.
  • Li M; School of Information Science and Engineering, Shenyang University of Technology, Shenyang, 110870, China.
  • Liu X; School of Information Science and Engineering, Shenyang University of Technology, Shenyang, 110870, China.
  • Li M; School of Information Science and Engineering, Shenyang University of Technology, Shenyang, 110870, China.
Heliyon ; 9(3): e13809, 2023 Mar.
Article en En | MEDLINE | ID: mdl-36895395
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Texto completo: 1 Banco de datos: MEDLINE Idioma: En Revista: Heliyon Año: 2023 Tipo del documento: Article País de afiliación: China
Texto completo
Imprimir
XML
PubMed Links
Buscar en Google

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Revista: Heliyon Año: 2023 Tipo del documento: Article País de afiliación: China