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Layer-Number-Dependent Magnetism in the Co-Doped van der Waals Ferromagnet Fe3GaTe2.
Wang, Mingjie; Zhu, Kejia; Lei, Bin; Deng, Yazhou; Hu, Tao; Song, Dongsheng; Du, Haifeng; Tian, Mingliang; Xiang, Ziji; Wu, Tao; Chen, Xianhui.
Afiliación
  • Wang M; School of Physics and Optoelectronic Engineering, Anhui University, Hefei, Anhui 230601, People's Republic of China.
  • Zhu K; School of Physics and Optoelectronic Engineering, Anhui University, Hefei, Anhui 230601, People's Republic of China.
  • Lei B; School of Physics and Optoelectronic Engineering, Anhui University, Hefei, Anhui 230601, People's Republic of China.
  • Deng Y; School of Physics and Optoelectronic Engineering, Anhui University, Hefei, Anhui 230601, People's Republic of China.
  • Hu T; School of Physics and Optoelectronic Engineering, Anhui University, Hefei, Anhui 230601, People's Republic of China.
  • Song D; Institutes of Physical Science and Information Technology, Anhui University, Hefei, Anhui 230601, People's Republic of China.
  • Du H; Anhui Province Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui 230031, People's Republic of China.
  • Tian M; School of Physics and Optoelectronic Engineering, Anhui University, Hefei, Anhui 230601, People's Republic of China.
  • Xiang Z; CAS Key Laboratory of Strongly coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China.
  • Wu T; CAS Key Laboratory of Strongly coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China.
  • Chen X; CAS Key Laboratory of Strongly coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China.
Nano Lett ; 24(14): 4141-4149, 2024 Apr 10.
Article en En | MEDLINE | ID: mdl-38536947
ABSTRACT
Recently, van der Waals (vdW) antiferromagnets have been proposed to be crucial for spintronics due to their favorable properties compared to ferromagnets, including robustness against magnetic perturbation and high frequencies of spin dynamics. High-performance and energy-efficient spin functionalities often depend on the current-driven manipulation and detection of spin states, highlighting the significance of two-dimensional metallic antiferromagnets, which have not been much explored due to the lack of suitable materials. Here, we report a new metallic vdW antiferromagnet obtained from the ferromagnet Fe3GaTe2 by cobalt (Co) doping. Through the layer-number-dependent Hall resistance and magnetoresistance measurements, an evident odd-even layer-number effect has been observed in its few-layered flakes, suggesting that it could host an A-type antiferromagnetic structure. This peculiar layer-number-dependent magnetism in Co-doped Fe3GaTe2 helps unravel the complex magnetic structures in such doped vdW magnets, and our finding will enrich material candidates and spin functionalities for spintronic applications.
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Texto completo: 1 Banco de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2024 Tipo del documento: Article

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2024 Tipo del documento: Article