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Nonequivalent Atomic Vibrations at Interfaces in a Polar Superlattice.
Hoglund, Eric R; Walker, Harrison A; Hussain, Kamal; Bao, De-Liang; Ni, Haoyang; Mamun, Abdullah; Baxter, Jefferey; Caldwell, Joshua D; Khan, Asif; Pantelides, Sokrates T; Hopkins, Patrick E; Hachtel, Jordan A.
Afiliación
  • Hoglund ER; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37830, USA.
  • Walker HA; Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA, 22904, USA.
  • Hussain K; Department of Physics and, Astronomy, Vanderbilt University, Nashville, TN, 37235, USA.
  • Bao DL; Interdisciplinary Materials Science Program, Vanderbilt University, Nashville, TN, 37235, USA.
  • Ni H; Department of Electrical Engineering, University of South Carolina, Columbia, SC, 29208, USA.
  • Mamun A; Department of Physics and, Astronomy, Vanderbilt University, Nashville, TN, 37235, USA.
  • Baxter J; Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, 61820, USA.
  • Caldwell JD; Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL, 61820, USA.
  • Khan A; Interdisciplinary Materials Science Program, Vanderbilt University, Nashville, TN, 37235, USA.
  • Pantelides ST; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37830, USA.
  • Hopkins PE; Department of Mechanical Engineering and Electrical Engineering, Vanderbilt University, Nashville, TN, 37235, USA.
  • Hachtel JA; Department of Electrical Engineering, University of South Carolina, Columbia, SC, 29208, USA.
Adv Mater ; : e2402925, 2024 May 08.
Article en En | MEDLINE | ID: mdl-38717326
ABSTRACT
In heterostructures made from polar materials, e.g., AlN-GaN-AlN, the nonequivalence of the two interfaces is long recognized as a critical aspect of their electronic properties; in that, they host different 2D carrier gases. Interfaces play an important role in the vibrational properties of materials, where interface states enhance thermal conductivity and can generate unique infrared-optical activity. The nonequivalence of the corresponding interface atomic vibrations, however, is not investigated so far due to a lack of experimental techniques with both high spatial and high spectral resolution. Herein, the nonequivalence of AlN-(Al0.65Ga0.35)N and (Al0.65Ga0.35)N-AlN interface vibrations is experimentally demonstrated using monochromated electron energy-loss spectroscopy in the scanning transmission electron microscope (STEM-EELS) and density-functional-theory (DFT) calculations are employed to gain insights in the physical origins of observations. It is demonstrated that STEM-EELS possesses sensitivity to the displacement vector of the vibrational modes as well as the frequency, which is as critical to understanding vibrations as polarization in optical spectroscopies. The combination enables direct mapping of the nonequivalent interface phonons between materials with different phonon polarizations. The results demonstrate the capacity to carefully assess the vibrational properties of complex heterostructures where interface states dominate the functional properties.
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Texto completo: 1 Banco de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2024 Tipo del documento: Article País de afiliación: Estados Unidos

Texto completo: 1 Banco de datos: MEDLINE Idioma: En Revista: Adv Mater Asunto de la revista: BIOFISICA / QUIMICA Año: 2024 Tipo del documento: Article País de afiliación: Estados Unidos