Deep Ultraviolet Luminescence Due to Extreme Confinement in Monolayer GaN/Al(Ga)N Nanowire and Planar Heterostructures.

We present experimental results confirming extreme quantum confinement in GaN/AlxGa1-xN (x = 0.65 and 1.0) nanowire and planar heterostructures, where the GaN layer thickness is of the order of a monolayer. The results were obtained from temperature- and excitation-dependent and time-resolved photoluminescence measurements. In the GaN/AlN nanowire heterostructure array sample, the measured emission peak at 300 K is ∼5.18-5.28 eV. This is in excellent agreement with the calculated optical gap of 5.23 eV and 160-260 meV below the calculated electronic gap of 5.44 eV, suggesting that the observed emission is excitonic in nature with an exciton binding energy of ∼160-260 meV. Similarly, in the monolayer GaN/Al0.65Ga0.35N planar heterostructure, the measured emission peak at 300 K is 4.785 eV and in good agreement with the calculated optical gap of 4.68 eV and 95 meV below the calculated electronic gap of 4.88 eV. The estimated exciton binding energy is 95 meV and in close agreement with our theoretical calculations. Excitation-dependent and time-resolved photoluminescence data support the presence of excitonic transitions. Our results indicate that deep-ultraviolet excitonic light sources and microcavity devices can be realized with heterostructures incorporating monolayer-thick GaN.

Removing Stripes, Scratches, and Curtaining with Nonrecoverable Compressed Sensing.

Highly-directional image artifacts such as ion mill curtaining, mechanical scratches, or image striping from beam instability degrade the interpretability of micrographs. These unwanted, aperiodic features extend the image along a primary direction and occupy a small wedge of information in Fourier space. Deleting this wedge of data replaces stripes, scratches, or curtaining, with more complex streaking and blurring artifacts-known within the tomography community as "missing wedge" artifacts. Here, we overcome this problem by recovering the missing region using total variation minimization, which leverages image sparsity-based reconstruction techniques-colloquially referred to as compressed sensing (CS)-to reliably restore images corrupted by stripe-like features. Our approach removes beam instability, ion mill curtaining, mechanical scratches, or any stripe features and remains robust at low signal-to-noise. The success of this approach is achieved by exploiting CS's inability to recover directional structures that are highly localized and missing in Fourier Space.

Improving the performance of high-laser-damage-threshold, multilayer dielectric pulse-compression gratings through low-temperature chemical cleaning.

A low-temperature chemical cleaning approach has been developed to improve the performance of multilayer dielectric pulse-compressor gratings for use in the OMEGA EP laser system. X-ray photoelectron spectroscopy results guided the selection of targeted cleaning steps to strip specific families of manufacturing residues without damaging the grating's fragile 3D profile. Grating coupons that were cleaned using the optimized method consistently met OMEGA EP requirements on diffraction efficiency and 1054 nm laser-damage resistance at 10 ps. The disappearance of laser-conditioning effects for the highest-damage-threshold samples suggests a transition from a contamination-driven laser-damage mechanism to defect-driven damage for well-cleaned components.

Gradual Carrier Filling Effect in "Green" InGaN/GaN Quantum Dots: Femtosecond Carrier Kinetics with Sequential Two-Photon Absorption.

Quantum dots (QDs) allow for a significant amount of strain relaxation, which is helpful in GaN systems where a large lattice mismatch needs to be accommodated. InGaN QDs with a large indium composition are intensively investigated for light emitters requiring longer wavelengths. These are especially important for developing high-efficiency white light sources. Understanding the carrier dynamics in this large lattice-mismatched system is essential to improving the radiative efficiency while circumventing high defect density. This work investigates femtosecond carrier and photon dynamics in self-organized In0.27Ga0.73N/GaN QDs grown by molecular beam epitaxy using transient differential absorption spectroscopy, which measures the differential absorption coefficient (Δα) with and without an optical pump. Due to 3D quantum confinement and the small effective mass of InGaN, the low density of states in the conduction band is easily filled with electrons. In contrast, the GaN barrier region is replete with a high density of electrons due to a large effective mass. This contrast in carrier density creates a unique phenomenon in the dynamics, showing a change in the differential absorption coefficient (Δα) sign from negative to positive with time. The ultrafast microscopic processes indicate that right after the optical pump and first photon absorption, the valence (conduction) band states are depleted (replete) of electrons. This ground-state bleaching process makes Δα negative, and the probe beam is not absorbed. The electrons are then gradually transferred from the GaN barrier into InGaN QDs, which absorb the second photon from the probe beam (excited-state absorption), making Δα positive. The presence of excited-state carriers with a long lifetime is indicative of the enhanced availability of carriers for radiative recombination. This effect also promotes stimulated emission and amplified spontaneous emission, which can be used to develop lasers and superluminescent LEDs, respectively. Measurements with multiple pump powers and temperatures further confirm that the efficacy of InGaN QDs is enhanced by this effective mass contrast and 3D reservoir of carriers from the GaN barrier. This effect can be used to improve the internal quantum efficiency of GaN-based light emitters.

Species diversity and phylogeography of Cornus kousa (Asian dogwood) captured by genomic and genic microsatellites.

Cornus kousa (Asian dogwood), an East Asia native tree, is the most economically important species of the dogwood genus, owing to its desirable horticultural traits and ability to hybridize with North America-native dogwoods. To assess the species genetic diversity and to better inform the ongoing and future breeding efforts, we assembled an herbarium and arboretum collection of 131 noncultivated C. kousa specimens. Genotyping and capillary electrophoresis analyses of our C. kousa collection with the newly developed genic and published nuclear genomic microsatellites permitted assessment of genetic diversity and evolutionary history of the species. Regardless of the microsatellite type used, the study yielded generally similar insights into the C. kousa diversity with subtle differences deriving from and underlining the marker used. The accrued evidence pointed to the species distinct genetic pools related to the plant country of origin. This can be helpful in the development of the commercial cultivars for this important ornamental crop with increased pyramided utility traits. Analyses of the C. kousa evolutionary history using the accrued genotyping datasets pointed to an unsampled ancestor population, possibly now extinct, as per the phylogeography of the region. To our knowledge, there are few studies utilizing the same gDNA collection to compare performance of genomic and genic microsatellites. This is the first detailed report on C. kousa species diversity and evolutionary history inference.