ABSTRACT
We present results from composite plasmonic nanostructures designed to achieve the cascaded enhancement of electromagnetic fields at optical frequencies. Our structures comprise a small metallic nanodisc suspended above a larger disk. We probe the optical properties of these structures by coating them with a layer of a visible-light fluorophore and observing fluorescence signals with the help of scanning confocal microscopy. A 43 +/- 5-fold increase in the far-field fluorescence signal has been observed for two-tier composite nanostructures, when compared to the signal obtained from individual nanodiscs. Our results offer the prospect of using such nanostructures for field concentration, optical manipulation of nanoobjects, chemical and biological sensing.
Subject(s)
Gold/chemistry , Nanostructures/chemistry , Nanostructures/ultrastructure , Nanotechnology/methods , Spectrometry, Fluorescence/methods , Surface Plasmon Resonance/methods , Crystallization/methods , Light , Macromolecular Substances/chemistry , Materials Testing , Molecular Conformation , Particle Size , Surface PropertiesABSTRACT
We present composite plasmonic nanostructures designed to achieve cascaded enhancement of electromagnetic fields at optical frequencies. Our structures were made with the help of electron-beam lithography and comprise a set of metallic nanodisks placed one above another. The optical properties of reproducible arrays of these structures were studied by using scanning confocal Raman spectroscopy. We show that our composite nanostructures robustly demonstrate dramatic enhancement of the Raman signals when compared to those measured from constituent elements.
ABSTRACT
The migration of monovacancies (V0) and self-interstitials (I) has been observed in ion-implanted low-doped float-zone silicon by variable-energy positron annihilation spectroscopy. V0 and I were created by the in situ implantation of approximately 20 keV helium ions below 50 K. Monitoring the time evolution of the vacancy response during isothermal heating enabled the measurement of activation energies for I and V(0) [corrected] migration of 0.078(7) and 0.46(28) eV, respectively. In highly As-doped Si, partial V annihilation occurs via free I migration, with a second stage of annealing, probably associated with V-As complexes, above room temperature.
ABSTRACT
The effect of vacancies on the behavior of F in crystalline Si has been elucidated experimentally for the first time. With positron annihilation spectroscopy and secondary ion mass spectroscopy, we find that F retards recombination between vacancies (V) and interstitials (I) because V and I trap F to form complexes. F diffuses in the V-rich region via a vacancy mechanism with an activation energy of 2.12+/-0.08 eV. After a long annealing time at 700 degrees C, F precipitates have been observed by cross-section transmission electron microscopy which are developed from the V-type defects around the implantation range and the I-type defects at the end of range.