Light induced modulation of charge transport phenomena across the bistability region in [Fe(Htrz)2(trz)](BF4) spin crossover micro-rods.

We studied the effect of light irradiation on the electrical conductance of micro-rods of the spin crossover [Fe(Htrz)2(trz)](BF4) network, organized between interdigitated gold electrodes. By irradiating the sample with different wavelengths (between 295 and 655 nm) either in air or under a nitrogen atmosphere we observed both a reversible and an irreversible change of the current flowing in the device. The reversible process consists of an abrupt decrease of the current intensity (ca. 10-50%) upon light irradiation, while the irreversible process is characterized by a slow, but continuous increase in time of the current, which persists also in the dark. These photo-induced processes were only detected in the high conductance low-spin (LS) state of the complex. On switching the rods to the high spin (HS) state the conductance decreases two orders of magnitude (at the same temperature) and - as a consequence - the photo-effect vanishes.

Room-temperature tunnel magnetoresistance in self-assembled chemically synthesized metallic iron nanoparticles.

We report on room temperature magnetoresistance in networks of chemically synthesized metallic Fe nanoparticles surrounded by two types of organic barriers. Electrical properties, featuring Coulomb blockade, and magnetotransport measurements show that this magnetoresistance arises from spin-dependent tunnelling, so the organic ligands stabilizing the nanoparticles are efficient spin-conservative tunnel barrier. These results demonstrate the feasibility of an all-chemistry approach for room temperature spintronics.

Spin-crossover nanoparticles anchored on MoS2 layers for heterostructures with tunable strain driven by thermal or light-induced spin switching.

In the past few years, the effect of strain on the optical and electronic properties of MoS2 layers has attracted particular attention as it can improve the performance of optoelectronic and spintronic devices. Although several approaches have been explored, strain is typically externally applied on the two-dimensional material. In this work, we describe the preparation of a reversible 'self-strainable' system in which the strain is generated at the molecular level by one component of a MoS2-based composite material. Spin-crossover nanoparticles were covalently grafted onto functionalized layers of semiconducting MoS2 to form a hybrid heterostructure. Their ability to switch between two spin states on applying an external stimulus (light irradiation or temperature change) serves to generate strain over the MoS2 layer. A volume change accompanies this spin crossover, and the created strain induces a substantial and reversible change of the electrical and optical properties of the heterostructure.

Design of Bistable Gold@Spin-Crossover Core-Shell Nanoparticles Showing Large Electrical Responses for the Spin Switching.

A simple chemical protocol to prepare core-shell gold@spin-crossover (Au@SCO) nanoparticles (NPs) based on the 1D spin-crossover [Fe(Htrz)2 (trz)](BF4 ) coordination polymer is reported. The synthesis relies on a two-step approach consisting of a partial surface ligand substitution of the citrate-stabilized Au NPs followed by the controlled growth of a very thin layer of the SCO polymer. As a result, colloidally stable core@shell spherical NPs with a Au core of ca. 12 nm and a thin SCO shell 4 nm thick, are obtained, exhibiting a narrow distribution in sizes. Differential scanning calorimetry proves that a cooperative spin transition in the range 340-360 K is maintained in these Au@SCO NPs, in full agreement with the values reported for pristine 4 nm SCO NPs. Temperature-dependent charge-transport measurements of an electrical device based on assemblies of these Au@SCO NPs also support this spin transition. Thus, a large change in conductance upon spin state switching, as compared with other memory devices based on the pristine SCO NPs, is detected. This results in a large improvement in the sensitivity of the device to the spin transition, with values for the ON/OFF ratio which are an order of magnitude better than the best ones obtained in previous SCO devices.

Charge Mobility and Dynamics in Spin-Crossover Nanoparticles Studied by Time-Resolved Microwave Conductivity.

We use the electrodeless time-resolved microwave conductivity (TRMC) technique to characterize spin-crossover (SCO) nanoparticles. We show that TRMC is a simple and accurate means for simultaneously assessing the magnetic state of SCO compounds and charge transport information on the nanometer length scale. In the low-spin state from liquid nitrogen temperature up to 360 K the TRMC measurements present two well-defined regimes in the mobility and in the half-life times, in which the former transition temperature TR occurs near 225 K. Below TR, we propose that an activationless regime taking place associated with short lifetimes of the charge carriers points at the presence of shallow-trap states. Above TR, these states are thermally released, yielding a thermally activated hopping regime where longer hops increase the mobility and, concomitantly, the barrier energy. The activation energy could originate not only from intricate contributions such as polaronic self-localizations but also from dynamic disorder due to phonons and/or thermal fluctuations of SCO moieties.

Near Room-Temperature Memory Devices Based on Hybrid Spin-Crossover@SiO2 Nanoparticles Coupled to Single-Layer Graphene Nanoelectrodes.

The charge transport properties of SCO [Fe(Htrz)2 (trz)](BF4 ) NPs covered with a silica shell placed in between single-layer graphene electrodes are reported. A reproducible thermal hysteresis loop in the conductance above room-temperature is evidenced. This bistability combined with the versatility of graphene represents a promising scenario for a variety of technological applications but also for future sophisticated fundamental studies.

Spin switching in electronic devices based on 2D assemblies of spin-crossover nanoparticles.

Two-dimensional assemblies of triazole-based spin-crossover nanoparticles (SCO NPs) presenting different morphologies are prepared and electrically characterized. The thermal hysteresis loop in the electrical conductance near room temperature correlates with the NP morphologies and their 2D organization. The unprecedentedly large difference - up to two orders of magnitude - in the electrical conductance of the two spin states is of interest for applications.

Nano-electromanipulation of spin crossover nanorods: towards switchable nanoelectronic devices.

The nanoscale manipulation and charge transport properties of the [Fe(Htrz)2(trz)](BF4) spin-crossover compound is demonstrated. Such 1D spin-crossover nanostructures are attractive building blocks for nanoelectronic switching and memory devices.