ABSTRACT
The electrical detection of the surface states of topological insulators is strongly impeded by the interference of bulk conduction, which commonly arises due to pronounced doping associated with the formation of lattice defects. As exemplified by the topological insulator Bi(2)Te(2)Se, we show that via van der Waals epitaxial growth on thin hBN substrates the structural quality of such nanoplatelets can be substantially improved. The surface state carrier mobility of nanoplatelets on hBN is increased by a factor of about 3 compared to platelets on conventional Si/SiO(x) substrates, which enables the observation of well-developed Shubnikov-de Haas oscillations. We furthermore demonstrate the possibility to effectively tune the Fermi level position in the films with the aid of a back gate.