ABSTRACT
We investigate the time-resolved photoelectric response of WSe2 crystals on glass and flexible polyimide substrates to determine the effect of a changed dielectric environment on the speed of the photodetectors. We show that varying the substrate material can alter the speed-limiting mechanism: while the detectors on polyimide are RC limited, those on glass are limited by slower excitonic diffusion processes. We attribute this to a shortening of the depletion layer at the metal electrode/WSe2 interface caused by the higher dielectric screening of glass compared to polyimide. The photodetectors on glass show a tunable bandwidth, which can be increased to 2.6 MHz with increasing the electric field.
ABSTRACT
The high sensitivity and molecular fingerprint capability of Surface-Enhanced Raman Spectroscopy (SERS) have lead to a wide variety of applications ranging from classical physics, chemistry over biology to medicine. Equally, there are numerous methods to fabricate samples owing to the desired properties and to create the localized surface plasmon resonances (LSPRS). However, for many applications the LSPRs must be specifically localized on micrometer sized areas and multiple steps of lithography are needed to achieve the desired substrates. Here we present a fast and reliable direct laser induced writing (DIW) method to produce SERS substrates with active areas of interest in any desired size and shape in the micrometer regime. Afterwards, the SERS substrates have been functionalized with phthalocyanines. The DIW fabricated samples realize sub-monolayer sensitivity and an almost uniform enhancement over the entire area, which make this production method suitable for many sensing applications.
ABSTRACT
Flexible electronics manufacturing technologies are essential and highly favored for future integrated photonic and electronic devices. Direct laser induced writing (DIW) of metals has shown potential as a fast and highly variable method in adaptable electronics. However, most of the DIW procedures use silver structures, which tend to oxidize and are limited to the micrometer regime. Here, a DIW technique is introduced that not only enables electrical gold wiring of 2D van-der-Waals materials with sub-µm structures and 100 nm interspacing resolution but is also capable of fabricating photo switches and field effect transistors on various rigid and elastic materials. Light sensitive metalloid Au32 -nanoclusters serve as the ink that allows for low-power cw-laser exposure without further post-treatment. With a simple lift-off procedure, the unexposed ink can be removed. The technique realizes ultrafast, high resolution, and high precision production of integrated electronics and may pave the way for personalized circuits even printed on curved surfaces.
ABSTRACT
The collective properties of self-assembled nanoparticles with long-range order bear immense potential for customized electronic materials by design. However, to mitigate the shortcoming of the finite-size distribution of nanoparticles and thus, the inherent energetic disorder within assemblies, atomically precise nanoclusters are the most promising building blocks. We report an easy and broadly applicable method for the controlled self-assembly of atomically precise Au32(nBu3P)12Cl8 nanoclusters into micro-crystals. This enables the determination of emergent optoelectronic properties which resulted from long-range order in such assemblies. Compared to the same nanoclusters in glassy, polycrystalline ensembles, we find a 100-fold increase in the electric conductivity and charge carrier mobility as well as additional optical transitions. We show that these effects are due to a vanishing energetic disorder and a drastically reduced activation energy to charge transport in the highly ordered assemblies. This first correlation of structure and electronic properties by comparing glassy and crystalline self-assembled superstructures of atomically precise gold nanoclusters paves the way towards functional materials with novel collective optoelectronic properties.