Influence of parasitic capacitance on output voltage for series-connected thin-film piezoelectric devices.

Series-connected thin film piezoelectric elements can generate large output voltages. The output voltage ideally is proportional to the number of connections. However, parasitic capacitances formed by the insulation layers and derived from peripheral circuitry degrade the output voltage. Conventional circuit models are not suitable for predicting the influence of the parasitic capacitance. Therefore we proposed the simplest model of piezoelectric elements to perform simulation program with integrated circuit emphasis (SPICE) circuit simulations). The effects of the parasitic capacitances on the thin-film Pb(Zr, Ti)O(3), (PZT) elements connected in series on a SiO(2) insulator are demonstrated. The results reveal the negative effect on the output voltage caused by the parasitic capacitances of the insulation layers. The design guidelines for the devices using series-connected piezoelectric elements are explained.

Equivalent Circuit Models: An Effective Tool to Simulate Electric/Dielectric Properties of Ores-An Example Using Granite.

The equivalent circuit model is widely used in high-voltage (HV) engineering to simulate the behavior of HV applications for insulation/dielectric materials. In this study, equivalent circuit models were prepared in order to represent the electric and dielectric properties of minerals and voids in a granite rock sample. The HV electric-pulse application shows a good possibility of achieving a high energy efficiency with the size reduction and selective liberation of minerals from rocks. The electric and dielectric properties were first measured, and the mineral compositions were also determined by using a micro-X-ray fluorescence spectrometer. Ten patterns of equivalent circuit models were then prepared after considering the mineral distribution in granite. Hard rocks, as well as minerals, are dielectric materials that can be represented as resistors and capacitors in parallel connections. The values of the electric circuit parameters were determined from the known electric and dielectric parameters of the minerals in granite. The average calculated data of the electric properties of granite agreed with the measured data. The conductivity values were 53.5 pS/m (measurement) and 36.2 pS/m (simulation) in this work. Although there were some differences between the measured and calculated data of dielectric loss (tanδ), their trend as a function of frequency agreed. Even though our study specifically dealt with granite, the developed equivalent circuit model can be applied to any other rock.

Simulation of Electrical and Thermal Properties of Granite under the Application of Electrical Pulses Using Equivalent Circuit Models.

Since energy efficiency in comminution of ores is as small as 1% using a mechanical crushing process, it is highly demanded to improve its efficiency. Using electrical impulses to selectively liberate valuable minerals from ores can be a solution of this problem. In this work, we developed a simulation method using equivalent circuits of granite to better understand the crushing process with high-voltage (HV) electrical pulses. From our simulation works, we calculated the electric field distributions in granite when an electrical pulse was applied. We also calculated other associated electrical phenomena such as produced heat and temperature changes from the simulation results. A decrease in the electric field was observed in the plagioclase with high electrical conductivity and void space. This suggests that the void volume in each mineral is important in calculating the electrical properties. Our equivalent circuit models considering both the electrical conductivity and dielectric constant of a granite can more accurately represent the electrical properties of granite under HV electric pulse application. These results will help us better understand the liberation of minerals from granite by electric pulse application.

Characteristics of Sputtered Lead Zirconate Titanate Thin Films With Different Layer Configurations and Large Thickness.

To evaluate the characteristics of Pb(Zr,Ti)O3 (PZT) thin films (about [Formula: see text] thick) with three different sputtering configurations-single-layer (SL) deposition, multilayer (ML) deposition with internal electrodes, and multistep (MS) deposition-were prepared. The SL films exhibited poorer dielectric characteristics than the ML and MS films. The reliability and piezoelectric characteristics were especially high in the MS film, with an [Formula: see text] constant of -9.5 C · m-2. To investigate the porosity of the films, reconstructed 3-D SEM technique is employed. Reconstructed 3-D SEM images revealed decreased void densities in the ML and MS films, which improved their performance. The MS configuration provided the best dielectric and piezoelectric performance of PZT films.