ABSTRACT
Perovskite solar cells with the formula FA1-xCsxPbI3, where FA is formamidinium, provide an attractive option for integrating high efficiency, durable stability and compatibility with scaled-up fabrication. Despite the incorporation of Cs cations, which could potentially enable a perfect perovskite lattice1,2, the compositional inhomogeneity caused by A-site cation segregation is likely to be detrimental to the photovoltaic performance of the solar cells3,4. Here we visualized the out-of-plane compositional inhomogeneity along the vertical direction across perovskite films and identified the underlying reasons for the inhomogeneity and its potential impact for devices. We devised a strategy using 1-(phenylsulfonyl)pyrrole to homogenize the distribution of cation composition in perovskite films. The resultant p-i-n devices yielded a certified steady-state photon-to-electron conversion efficiency of 25.2% and durable stability.
ABSTRACT
Quantifying recombination in halide perovskites is a crucial prerequisite to control and improve the performance of perovskite-based solar cells. While both steady-state and transient photoluminescence are frequently used to assess recombination in perovskite absorbers, quantitative analyses within a consistent model are seldom reported. We use transient photoluminescence measurements with a large dynamic range of more than ten orders of magnitude on triple-cation perovskite films showing long-lived photoluminescence transients featuring continuously changing decay times that range from tens of nanoseconds to hundreds of microseconds. We quantitatively explain both the transient and steady-state photoluminescence with the presence of a high density of shallow defects and consequent high rates of charge carrier trapping, thereby showing that deep defects do not affect the recombination dynamics. The complex carrier kinetics caused by emission and recombination processes via shallow defects imply that the reporting of only single lifetime values, as is routinely done in the literature, is meaningless for such materials. We show that the features indicative for shallow defects seen in the bare films remain dominant in finished devices and are therefore also crucial to understanding the performance of perovskite solar cells.
ABSTRACT
The success of halide perovskites in a host of optoelectronic applications is often attributed to their long photoexcited carrier lifetimes, which has led to charge-carrier recombination processes being described as unique compared to other semiconductors. Here, we integrate recent literature findings to provide a critical assessment of the factors we believe are most likely controlling recombination in the most widely studied halide perovskite systems. We focus on four mechanisms that have been proposed to affect measured charge carrier recombination lifetimes, namely: (1) recombination via trap states, (2) polaron formation, (3) the indirect nature of the bandgap (e.g., Rashba effect), and (4) photon recycling. We scrutinize the evidence for each case and the implications of each process on carrier recombination dynamics. Although they have attracted considerable speculation, we conclude that multiple trapping or hopping in shallow trap states, and the possible indirect nature of the bandgap (e.g., Rashba effect), seem to be less likely given the combined evidence, at least in high-quality samples most relevant to solar cells and light-emitting diodes. On the other hand, photon recycling appears to play a clear role in increasing apparent lifetime for samples with high photoluminescence quantum yields. We conclude that polaron dynamics are intriguing and deserving of further study. We highlight potential interdependencies of these processes and suggest future experiments to better decouple their relative contributions. A more complete understanding of the recombination processes could allow us to rationally tailor the properties of these fascinating semiconductors and will aid the discovery of other materials exhibiting similarly exceptional optoelectronic properties.
ABSTRACT
One of the most significant features of lead-halide perovskites is their ability to have comparably slow recombination despite the fact that these materials are mostly processed from solution at room temperature. The slow recombination allows achieving high open-circuit voltages when the lead-halide perovskite layers are used in solar cells. This perspective discusses the state of the art of our understanding and of experimental data with regard to recombination and open-circuit voltages in lead-halide perovskites. A special focus is put onto open questions that the community has to tackle to design future photovoltaic and optoelectronic devices based on lead-halide perovskites and other semiconductors with similar properties. This article is part of a discussion meeting issue 'Energy materials for a low carbon future'.
ABSTRACT
Nanocrystal-based solar cells are promising candidates for next generation photovoltaic applications; however, the most recent improvements to the device chemistry and architecture have been mostly trial-and-error based advancements. Due to complex interdependencies among parameters, determining factors that limit overall solar cell efficiency are not trivial. Furthermore, many of the underlying chemical and physical parameters of nanocrystal-based solar cells have only recently been understood and quantified. Here, we show that this new understanding of interfaces, transport, and origin of trap states in nanocrystal-based semiconductors can be integrated into simulation tools, based on 1D drift-diffusion models. Using input parameters measured in independent experiments, we find excellent agreement between experimentally measured and simulated PbS nanocrystal solar cell behavior without having to fit any parameters. We then use this simulation to understand the impact of interfaces, charge carrier mobility, and trap-assisted recombination on nanocrystal performance. We find that careful engineering of the interface between the nanocrystals and the current collector is crucial for an optimal open-circuit voltage. We also show that in the regime of trap-state densities found in PbS nanocrystal solar cells (â¼1017 cm-3), device performance exhibits strong dependence on the trap state density, explaining the sensitivity of power conversion efficiency to small changes in nanocrystal synthesis and nanocrystal thin-film deposition that has been reported in the literature. Based on these findings, we propose a systematic approach to nanocrystal solar cell optimization. Our method for incorporating parameters into simulations presented and validated here can be adopted to speed up the understanding and development of all types of nanocrystal-based solar cells.
ABSTRACT
Technological deployment of organic photovoltaic modules requires improvements in device light-conversion efficiency and stability while keeping material costs low. Here we demonstrate highly efficient and stable solar cells using a ternary approach, wherein two non-fullerene acceptors are combined with both a scalable and affordable donor polymer, poly(3-hexylthiophene) (P3HT), and a high-efficiency, low-bandgap polymer in a single-layer bulk-heterojunction device. The addition of a strongly absorbing small molecule acceptor into a P3HT-based non-fullerene blend increases the device efficiency up to 7.7 ± 0.1% without any solvent additives. The improvement is assigned to changes in microstructure that reduce charge recombination and increase the photovoltage, and to improved light harvesting across the visible region. The stability of P3HT-based devices in ambient conditions is also significantly improved relative to polymer:fullerene devices. Combined with a low-bandgap donor polymer (PBDTTT-EFT, also known as PCE10), the two mixed acceptors also lead to solar cells with 11.0 ± 0.4% efficiency and a high open-circuit voltage of 1.03 ± 0.01 V.
ABSTRACT
In the last decade, photovoltaics (PV) has experienced an important transformation. Traditional solar cells formed by compact semiconductor layers have been joined by new kinds of cells that are constituted by a complex mixture of organic, inorganic and solid or liquid electrolyte materials, and rely on charge separation at the nanoscale. Recently, metal organic halide perovskites have appeared in the photovoltaic landscape showing large conversion efficiencies, and they may share characteristics of the two former types. In this paper we provide a general description of the photovoltaic mechanisms of the single absorber solar cell types, combining all-inorganic, hybrid and organic cells into a single framework. The operation of the solar cell relies on a number of internal processes that exploit internal charge separation and overall charge collection minimizing recombination. There are two main effects to achieve the required efficiency, first to exploit kinetics at interfaces, favouring the required forward process, and second to take advantage of internal electrical fields caused by a built-in voltage and by the distribution of photogenerated charges. These principles represented by selective contacts, interfaces and the main energy diagram, form a solid base for the discussion of the operation of future types of solar cells. Additional effects based on ferroelectric polarization and ionic drift provide interesting prospects for investigating new PV effects mainly in the perovskite materials.
ABSTRACT
We review the methods used to simulate the optoelectronic response of organic solar cells and focus on the application of one-dimensional drift-diffusion simulations. We discuss how the important physical processes are treated and review some of the experiments necessary to determine the input parameters for device simulations. To illustrate the usefulness of drift-diffusion simulations, we discuss several case studies, addressing the influence of charged defects on transport in bipolar and unipolar devices, the influence of defects on recombination, device performance and ideality factors. To illustrate frequency domain simulations, we show how to determine the validity range of Mott-Schottky plots for thin devices. Finally, we discuss an example where optical simulations are used to calculate the parasitic absorption in contact layers.
ABSTRACT
Systematically moving the alkyl-chain branching position away from the polymer backbone afforded two new thieno[3,2-b]thiophene-diketopyrrolopyrrole (DPPTT-T) polymers. When used as donor materials in polymer:fullerene solar cells, efficiencies exceeding 7% were achieved without the use of processing additives. The effect of the position of the alkyl-chain branching point on the thin-film morphology was investigated using X-ray scattering techniques and the effects on the photovoltaic and charge-transport properties were also studied. For both solar cell and transistor devices, moving the branching point further from the backbone was beneficial. This is the first time that this effect has been shown to improve solar cell performance. Strong evidence is presented for changes in microstructure across the series, which is most likely the cause for the photocurrent enhancement.
ABSTRACT
The extraction of photogenerated charge carriers and the generation of a photovoltage belong to the fundamental functionalities of any solar cell. These processes happen not instantaneously but rather come with finite time constants, e.g., a time constant related to the rise of the externally measured open circuit voltage following a short light pulse. Herein, a new method to analyze transient photovoltage measurements at different bias light intensities combining rise and decay times of the photovoltage. The approach uses a linearized version of a system of two coupled differential equations that are solved analytically by determining the eigenvalues of a 2 × 2 matrix. By comparison between the eigenvalues and the measured rise and decay times during a transient photovoltage measurement, the rates of carrier recombination and extraction as a function of bias voltage are determined, and establish a simple link between their ratio and the efficiency losses in the perovskite solar cell.
ABSTRACT
For indoor light harvesting, the adjustable band gap of molecular semiconductors is a significant advantage relative to many inorganic photovoltaic technologies. However, several challenges have to be overcome that include processability in nonhalogenated solvents, sufficiently high thicknesses (>250 nm) and high efficiencies at illuminances typically found in indoor environments. Here, we report on the development and application of new methods to quantify and identify performance losses based on thickness- and intensity-dependent current density-voltage measurements. Furthermore, we report on the fabrication of solar cells based on the blend PBDB-T:F-M processed in the nonhalogenated solvent o-xylene. In the low-intensity regime, insufficiently high shunt resistances limit the photovoltaic performance and by analyzing current density voltage-curves for solar cells with various shunt resistances we find that â¼100 kΩ cm2 are required at 200 lux. We provide a unified description of fill factor losses introducing the concept of light-intensity-dependent apparent shunts that originate from incomplete and voltage-dependent charge collection. In experiment and simulation, we show that good fill factors are associated with a photo-shunt inversely scaling with intensity. Intensity regions with photo-shunt resistances close to the dark-shunt resistance are accompanied by severe extraction losses. To better analyze recombination, we perform a careful analysis of the light intensity and thickness dependence of the open-circuit voltage and prove that trap-assisted recombination dominates the recombination losses at low light intensities.
ABSTRACT
We study the appearance and energy of the charge transfer (CT) state using measurements of electroluminescence (EL) and photoluminescence (PL) in blend films of high-performance polymers with fullerene acceptors. EL spectroscopy provides a direct probe of the energy of the interfacial states without the need to rely on the LUMO and HOMO energies as estimated in pristine materials. For each polymer, we use different fullerenes with varying LUMO levels as electron acceptors, in order to vary the energy of the CT state relative to the blend with [6,6]-phenyl C61-butyric acid methyl ester (PCBM). As the energy of the CT state emission approaches the absorption onset of the blend component with the smaller optical bandgap, E(opt,min) ≡ min{E(opt,donor); E(opt,acceptor)}, we observe a transition in the EL spectrum from CT emission to singlet emission from the component with the smaller bandgap. The appearance of component singlet emission coincides with reduced photocurrent and fill factor. We conclude that the open circuit voltage V(OC) is limited by the smaller bandgap of the two blend components. From the losses of the studied materials, we derive an empirical limit for the open circuit voltage: V(OC) â² E(opt,min)/e - (0.66 ± 0.08)eV.
ABSTRACT
A large body of literature reports that both bismuth vanadate and haematite photoanodes are semiconductors with an extremely high doping density between 1018 and 1021 cm-3. Such values are obtained from Mott-Schottky plots by assuming that the measured capacitance is dominated by the capacitance of the depletion layer formed by the doping density within the photoanode. In this work, we show that such an assumption is erroneous in many cases because the injection of electrons from the collecting contact creates a ubiquitous capacitance step that is very difficult to distinguish from that of the depletion layer. Based on this reasoning, we derive an analytical resolution limit that is independent of the assumed active area and surface roughness of the photoanode, below which doping densities cannot be measured in a capacitance measurement. We find that the reported doping densities in the literature lie very close to this value and therefore conclude that there is no credible evidence from capacitance measurements that confirms that bismuth vanadate and haematite photoanodes contain high doping densities.
ABSTRACT
While halide perovskites have excellent optoelectronic properties, their poor stability is a major obstacle toward commercialization. There is a strong interest to move away from organic A-site cations such as methylammonium and formamidinium toward Cs with the aim of improving thermal stability of the perovskite layers. While the optoelectronic properties and the device performance of Cs-based all-inorganic lead-halide perovskites are very good, they are still trailing behind those of perovskites that use organic cations. Here, the state-of-the-art of all-inorganic perovskites for photovoltaic applications is reviewed by performing detailed meta-analyses of key performance parameters on the cell and material level. Key material properties such as carrier mobilities, external photoluminescence quantum efficiency, and photoluminescence lifetime are discussed and what is known about defect tolerance in all-inorganic is compared relative to hybrid (organic-inorganic) perovskites. Subsequently, a unified approach is adopted for analyzing performance losses in perovskite solar cells based on breaking down the losses into several figures of merit representing recombination losses, resistive losses, and optical losses. Based on this detailed loss analysis, guidelines are eventually developed for future performance improvement of all-inorganic perovskite solar cells.
ABSTRACT
Solar photovoltaic (PV) energy generation is highly dependent on weather conditions and only applicable when the sun is shining during the daytime, leading to a mismatch between demand and supply. Merging PVs with battery storage is the straightforward route to counteract the intermittent nature of solar generation. Capacity (or energy density), overall efficiency, and stability at elevated temperatures are among key battery performance metrics for an integrated PV-battery system. The performance of high-capacity silicon (Si)/graphite (Gr) anode and LiNi0.6Mn0.2Co0.2O2 (NMC622) cathode cells at room temperature, 45, and 60 °C working temperatures for PV modules are explored. The electrochemical performance of both half and full cells are tested using a specially formulated electrolyte, 1 M LiPF6 in ethylene carbonate: diethyl carbonate, with 5 wt % fluoroethylene carbonate, 2 wt % vinylene carbonate, and 1 wt % (2-cyanoethyl)triethoxysilane. To demonstrate solar charging, perovskite solar cells (PSCs) are coupled to the developed batteries, following the evaluation of each device. An overall efficiency of 8.74% under standard PV test conditions is obtained for the PSC charged lithium-ion battery via the direct-current-direct-current converter, showing the promising applicability of silicon/graphite-based anodes in the PV-battery integrated system.
ABSTRACT
Electron transporting layers facilitating electron extraction and suppressing hole recombination at the cathode are crucial components in any thin-film solar cell geometry, including that of metal-halide perovskite solar cells. Amorphous tantalum oxide (Ta2O5) deposited by spin coating was explored as an electron transport material for perovskite solar cells, achieving power conversion efficiency (PCE) up to ~14%. Ultraviolet photoelectron spectroscopy (UPS) measurements revealed that the extraction of photogenerated electrons is facilitated due to proper alignment of bandgap energies. Steady-state photoluminescence spectroscopy (PL) verified efficient charge transport from perovskite absorber film to thin Ta2O5 layer. Our findings suggest that tantalum oxide as an n-type semiconductor with a calculated carrier density of ~7 × 1018/cm3 in amorphous Ta2O5 films, is a potentially competitive candidate for an electron transport material in perovskite solar cells.
ABSTRACT
The Lambertian limit for solar cells is a benchmark for evaluating their efficiency. It has been shown that the performance of either extremely thick or extremely thin solar cells can be driven close to this limit by using an appropriate photon management. Here we show that this is likewise possible for realistic, practically relevant thin-film solar cells based on amorphous silicon. Most importantly, we achieve this goal by relying on random textures already incorporated into state-of-the-art superstrates; with the only subtlety that their topology has to be downscaled to typical feature sizes of about 100 nm.
ABSTRACT
Ni et al (Research Articles, 20 March 2020, p. 1352) report bulk trap densities of 1011 cm-3 and an increase in interfacial trap densities by one to four orders of magnitude from drive-level capacitance profiling of lead halide perovskites. From electrostatic arguments, we show that the results are not trap densities but are a consequence of the geometrical capacitance and charge injection into the perovskite layer.