ABSTRACT
We theoretically and experimentally investigate Tamm plasmon (TP) modes in a metal/semiconductor distributed Bragg reflector (DBR) interface. A thin Ag (silver) layer with a thickness (55 nm from simulation) that is optimized to guarantee a low reflectivity at the resonance was deposited on nanoporous GaN DBRs fabricated using electrochemical (EC) etching on freestanding semipolar (2021¯) GaN substrates. The reflectivity spectra of the DBRs are compared before and after the Ag deposition and with that of a blanket Ag layer deposited on GaN. The experimental results indicate the presence of a TP mode at â¼ 454 nm on the structure after the Ag deposition, which is also supported by theoretical calculations using a transfer-matrix algorithm. The results from mode dispersion with energy-momentum reflectance spectroscopy measurements also support the presence of a TP mode at the metal-nanoporous GaN DBR interface. An active medium can also be accommodated within the mode for optoelectronics and photonics. Moreover, the simulation results predict a sensitivity of the TP mode wavelength to the ambient (â¼ 4-7 nm shift when changing the ambient within the pores from air with n = 1 to isopropanol n = 1.3), suggesting an application of the nanoporous GaN-based TP structure for optical sensing.
ABSTRACT
We demonstrate that confined Tamm plasmon modes can be advantageously exploited for the realization of new kind of metal/semiconductor lasers. Laser emission is demonstrated for Tamm structures with various diameters of the metallic disks which provide the confinement. A reduction of the threshold with the size is observed. The competition between the acceleration of the spontaneous emission and the increase of the losses leads to an optimal size, which is in good agreement with calculations.
ABSTRACT
We demonstrate that quality factors up to 5000 can be obtained in Tamm-like hybrid metal/semiconductor structures. To do this, a Bragg mirror is covered by a thin transparent layer and a metallic film. The reduced losses of these modes are related to an intermediate behavior between conventional Tamm plasmon and Bragg modes lying deeper in the semiconductor medium. One of the most striking features of this approach is that these super Tamm modes can still be spatially confined with the metal. Confinement on micrometric scale is experimentally demonstrated. The simplicity and versatility of high-Q mode control by metal structuration open perspectives for lasing and polaritonic applications.