Surface structured optical coatings with near-perfect broadband and wide-angle antireflective properties.

Optical thin-film coatings are typically limited to designs where the refractive index varies in only a single dimension. However, additional control over the propagation of incoming light is possible by structuring the other two dimensions. In this work, we demonstrate a three-dimensional surface structured optical coating that combines the principles of thin-film optical design with bio-inspired nanostructures to yield near-perfect antireflection. Using this hybrid approach, we attain average reflection losses of 0.2% on sapphire and 0.6% on gallium nitride for 300-1800 nm light. This performance is maintained to very wide incidence angles, achieving less than 1% reflection at all measured wavelengths out to 45° for sapphire. This hybrid design has the potential to significantly enhance the broadband and wide-angle properties for a number of optical systems that require high transparency.

Design of antireflective nanostructures and optical coatings for next-generation multijunction photovoltaic devices.

The successful development of multijunction photovoltaic devices with four or more subcells has placed additional importance on the design of high-quality broadband antireflection coatings. Antireflective nanostructures have shown promise for reducing reflection loss compared to the best thin-film interference coatings. However, material constraints make nanostructures difficult to integrate without introducing additional absorption or electrical losses. In this work, we compare the performance of various nanostructure configurations with that of an optimized multilayer antireflection coating. Transmission into a four-junction solar cell is computed for each antireflective design, and the corresponding cell efficiency is calculated. We find that the best performance is achieved with a hybrid configuration that combines nanostructures with a multilayer thin-film optical coating. This approach increases transmitted power into the top subcell by 1.3% over an optimal thin-film coating, corresponding to an increase of approximately 0.8% in the modeled cell efficiency.

Pulsed Laser Deposition of Epitaxial SrTiO3/Sr3Al2O6 Templates as a Water-Soluble Sacrificial Layer for GaAs Growth and Lift-Off.

Despite the record-high efficiency of GaAs solar cells, their terrestrial application is limited due to both the particularly high costs related to the required single-crystal substrates and epitaxial growth. A water-soluble lift-off layer could reduce costs by avoiding the need for toxic and dangerous etchants, substrate repolishing, and expensive process steps. Sr3Al2O6 (SAO) is a water-soluble cubic oxide, and SrTiO3 (STO) is a perovskite oxide, where a SAO ≈ 4 × a STO ≈ (2√2)a GaAs. Here, the pulsed laser-deposited epitaxial growth of SrTiO3/Sr3Al2O6 templates on STO and Ge substrates for epitaxial GaAs growth was investigated, where SAO works as a sacrificial layer and STO protects the hygroscopic SAO during substrate transfer between deposition chambers. We identified that the SAO film quality is strongly dependent on the growth temperature and the O2 partial pressure, where either a high T or a high P(O2) improves the quality. XRD spectra of the films with optimized deposition parameters showed an epitaxial STO/SAO stack aligned to the STO (100) substrate, and TEM analysis revealed that the grown films were epitaxially crystalline throughout the thickness. The STO/SAO growth on Ge substrates at a high T with no intentional O2 flow resulted in some nonepitaxial grains and surface pits, likely due to partial Ge oxidation. GaAs was grown by metalorganic vapor-phase epitaxy (MOVPE) on STO/SAO/STO templates. Lift-off after dissolving the sacrificial SAO in water resulted in free-standing ⟨001⟩ preferentially oriented polycrystalline GaAs.

In Situ Smoothing of Facets on Spalled GaAs(100) Substrates during OMVPE Growth of III-V Epilayers, Solar Cells, and Other Devices: The Impact of Surface Impurities/Dopants.

One possible pathway toward reducing the cost of III-V solar cells is to remove them from their growth substrate by spalling fracture, and then reuse the substrate for the growth of multiple cells. Here we consider the growth of III-V cells on spalled GaAs(100) substrates, which typically have faceted surfaces after spalling. To facilitate the growth of high-quality cells, these faceted surfaces should be smoothed prior to cell growth. In this study, we show that these surfaces can be smoothed during organometallic vapor-phase epitaxy growth, but the choice of epilayer material and modification of the various surfaces by impurities/dopants greatly impacts whether or not the surface becomes smooth, and how rapidly the smoothing occurs. Representative examples are presented along with a discussion of the underlying growth processes. Although this work was motivated by solar cell growth, the methods are generally applicable to the growth of any III-V device on a nonplanar substrate.

Consideration of the Intricacies Inherent in Molecular Beam Epitaxy of the NaCl/GaAs System.

The high cost of substrates for III-V growth can be cost limiting for technologies that require large semiconductor areas. Thus, being able to separate device layers and reuse the original substrate is highly desirable, but existing techniques to lift a film from a substrate have substantial drawbacks. This work discusses some of the complexities with the growth of a water-soluble, alkali halide salt thin film between a III-V substrate and overlayer. Much of the difficulty stems from the growth of GaAs on an actively decomposing NaCl surface at elevated temperatures. Interestingly, the presence of an in situ electron beam incident on the NaCl surface, prior to and during GaAs deposition, affects the crystallinity and morphology of the III-V overlayer. Here, we investigate a wide range of growth temperatures and the timing of the impinging flux of both elemental sources and high energy electrons at different points during the growth. We show that an assortment of morphologies (discrete islands, porous material, and fully dense layers with sharp interfaces) and crystallinity (amorphous, crystalline, and highly textured) occur depending on the specific growth conditions, driven largely by changes in GaAs nucleation which is greatly affected by the presence of the reflection high energy electron diffraction beam.

A performance comparison between GaInP-on-Si and GaAs-on-Si 3-terminal tandem solar cells.

The pursuit of ever-higher solar cell efficiencies has focused heavily on multijunction technologies. In tandem cells, subcells are typically either contacted via two terminals (2T) or four terminals (4T). Simulations show that the less-common three-terminal (3T) design may be comparable to 4T tandem cells in its compatibility with a range of materials, operating conditions, and methods for subcell integration, yet the 3T design circumvents shading losses of the 4T intermediate conductive layers. This study analyzes the performance of two superstrate 3T III-V-on-Si (III-V//Si) tandem cells: One has slightly greater current contribution from the Si bottom cell (GaInP//Si) and the other has substantially greater current contribution from the GaAs top cell (GaAs//Si). Our results show that both tandem cells exhibit the same efficiency (21.3%), thereby demonstrating that the third terminal allows for flexibility in the selection of the top cell material, similar to the 4T design.

A Taxonomy for Three-Terminal Tandem Solar Cells.

Tandem and multijunction solar cells offer the only demonstrated path to terrestrial 1-sun solar cell efficiency over 30%. Three-terminal tandem (3TT) solar cells can overcome some of the limitations of two-terminal and four-terminal tandem solar cell designs. However, the coupled nature of the cells adds a degree of complexity to the devices themselves and the ways that their performance can be measured and reported. While many different configurations of 3TT devices have been proposed, there is no standard taxonomy to discuss the device structure or loading topology. This Perspective proposes a taxonomy for 3TT solar cells to enable a common nomenclature for discussing these devices and their performance. It also provides a brief history of three-terminal devices in the literature and demonstrates that many different 3TT devices can work at efficiencies above 30% if properly designed.