Substrate selectivity in the low temperature atomic layer deposition of cobalt metal films from bis(1,4-di-tert-butyl-1,3-diazadienyl)cobalt and formic acid.

The initial stages of cobalt metal growth by atomic layer deposition are described using the precursors bis(1,4-di-tert-butyl-1,3-diazadienyl)cobalt and formic acid. Ruthenium, platinum, copper, Si(100), Si-H, SiO2, and carbon-doped oxide substrates were used with a growth temperature of 180 °C. On platinum and copper, plots of thickness versus number of growth cycles were linear between 25 and 250 cycles, with growth rates of 0.98 Å/cycle. By contrast, growth on ruthenium showed a delay of up to 250 cycles before a normal growth rate was obtained. No films were observed after 25 and 50 cycles. Between 100 and 150 cycles, a rapid growth rate of ∼1.6 Å/cycle was observed, which suggests that a chemical vapor deposition-like growth occurs until the ruthenium surface is covered with ∼10 nm of cobalt metal. Atomic force microscopy showed smooth, continuous cobalt metal films on platinum after 150 cycles, with an rms surface roughness of 0.6 nm. Films grown on copper gave rms surface roughnesses of 1.1-2.4 nm after 150 cycles. Films grown on ruthenium, platinum, and copper showed resistivities of <20 µΩ cm after 250 cycles and had values close to those of the uncoated substrates at ≤150 cycles. X-ray photoelectron spectroscopy of films grown with 150 cycles on a platinum substrate showed surface oxidation of the cobalt, with cobalt metal underneath. Analogous analysis of a film grown with 150 cycles on a copper substrate showed cobalt oxide throughout the film. No film growth was observed after 1000 cycles on Si(100), Si-H, and carbon-doped oxide substrates. Growth on thermal SiO2 substrates gave ∼35 nm thick layers of cobalt(ii) formate after ≥500 cycles. Inherently selective deposition of cobalt on metallic substrates over Si(100), Si-H, and carbon-doped oxide was observed from 160 °C to 200 °C. Particle deposition occurred on carbon-doped oxide substrates at 220 °C.

Highly Energetic, Low Sensitivity Aromatic Peroxy Acids.

The synthesis, structure, and energetic materials properties of a series of aromatic peroxy acid compounds are described. Benzene-1,3,5-tris(carboperoxoic) acid is a highly sensitive primary energetic material, with impact and friction sensitivities similar to those of triacetone triperoxide. By contrast, benzene-1,4-bis(carboperoxoic) acid, 4-nitrobenzoperoxoic acid, and 3,5-dinitrobenzoperoxoic acid are much less sensitive, with impact and friction sensitivities close to those of the secondary energetic material 2,4,6-trinitrotoluene. Additionally, the calculated detonation velocities of 3,5-dinitrobenzoperoxoic acid and 2,4,6-trinitrobenzoperoxoic acid exceed that of 2,4,6-trinitrotoluene. The solid-state structure of 3,5-dinitrobenzoperoxoic acid contains intermolecular O-H⋅⋅⋅O hydrogen bonds and numerous N⋅⋅⋅O, C⋅⋅⋅O, and O⋅⋅⋅O close contacts. These attractive lattice interactions may account for the less sensitive nature of 3,5-dinitrobenzoperoxoic acid.

Reductive elimination of hypersilyl halides from zinc(II) complexes. Implications for electropositive metal thin film growth.

Treatment of Zn(Si(SiMe3)3)2 with ZnX2 (X = Cl, Br, I) in tetrahydrofuran (THF) at 23 °C afforded [Zn(Si(SiMe3)3)X(THF)]2 in 83-99% yield. X-ray crystal structures revealed dimeric structures with Zn2X2 cores. Thermogravimetric analyses of [Zn(Si(SiMe3)3)X(THF)]2 demonstrated a loss of coordinated THF between 50 and 155 °C and then single-step weight losses between 200 and 275 °C. The nonvolatile residue was zinc metal in all cases. Bulk thermolyses of [Zn(Si(SiMe3)3)X(THF)]2 between 210 and 250 °C afforded zinc metal in 97-99% yield, Si(SiMe3)3X in 91-94% yield, and THF in 81-98% yield. Density functional theory calculations confirmed that zinc formation becomes energetically favorable upon THF loss. Similar reactions are likely to be general for M(SiR3)n/MXn pairs and may lead to new metal-film-growth processes for chemical vapor deposition and atomic layer deposition.

Volatile and thermally stable mid to late transition metal complexes containing α-imino alkoxide ligands, a new strongly reducing coreagent, and thermal atomic layer deposition of Ni, Co, Fe, and Cr metal films.

Treatment of MCl2 (M = Cu, Ni, Co, Fe, Mn, Cr) with 2 equiv of α-imino alkoxide salts K(RR'COCNtBu) (R = Me, tBu; R' = iPr, tBu) afforded M(RR'COCNtBu)2 or [Mn(RR'COCNtBu)2]2 in 9-75% yields. These complexes combine volatility and high thermal stability and have useful atomic layer deposition (ALD) precursor properties. Solution reactions between Ni, Co, and Mn complexes showed that BH3(NHMe2) can reduce all to metal powders. ALD growth of Ni, Co, Fe, and Cr films is demonstrated. Mn film growth may be possible, but the films oxidize completely upon exposure to air.

Synthesis, structure, and properties of group 1 metal complexes containing nitrogen-rich hydrotris(tetrazolyl)borate ligands.

Nitrogen-rich hydrotris(tetrazolyl)borate salts of lithium, sodium, and potassium have been prepared for the first time by thermolysis of the borohydride ion with three equivalents of tetrazoles in ether solvents at 160-162 °C. Despite the high nitrogen contents, these complexes have low sensitivity to impact, electrostatic discharge, and friction.

Synthesis, structure, and solution reduction reactions of volatile and thermally stable mid to late first row transition metal complexes containing hydrazonate ligands.

Treatment of MCl2 (M = Ni, Co, Fe, Mn, Cr) with 2 equiv of the hydrazonate salts K(tBuNNCHCtBuO), K(tBuNNCHCiPrO), or K(tBuNNCMeCMeO) afforded the complexes M(tBuNNCHCtBuO)2 (M = Ni, 65%; Co, 80%; Fe, 83%; Mn, 68%; Cr, 64%), M(tBuNNCHCiPrO)2 (M = Ni, 63%; Co, 86%; Fe, 75%), and M(tBuNNCMeCMeO)2 (M = Ni, 34%; Co, 29%; Fe, 27%). Crystal structure determinations of Co(tBuNNCHCtBuO)2, M(tBuNNCHCiPrO)2 (M = Ni, Co), and M(tBuNNCMeCMeO)2 (M = Ni, Co, Fe) revealed monomeric complexes with tetrahedral geometries about the metal centers. To evaluate the potential of these new complexes as film growth precursors, preparative sublimations, thermogravimetric analyses, solid state decomposition studies, and solution reactions with reducing coreagents were carried out. M(tBuNNCHCtBuO)2 sublime between 120 and 135 °C at 0.05 Torr, whereas M(tBuNNCHCiPrO)2 and M(tBuNNCMeCMeO)2 sublime between 100 and 105 °C at the same pressure. All complexes afforded ≥96% recovery of sublimed material, with ≤3% of nonvolatile residues. The solid state decomposition temperatures were highest for M(tBuNNCHCiPrO)2 (273-308 °C), intermediate for M(tBuNNCHCtBuO)2 (241-278 °C), and lowest for M(tBuNNCMeCMeO)2 (235-250 °C). Treatment of Co(tBuNNCHCtBuO)2 in tetrahydrofuran with hydrazine, BH3(L) (L = NHMe2, SMe2, THF), pinacol borane, and LiAlH4 led to rapid formation of cobalt metal, while analogous reductions of Mn(tBuNNCHCtBuO)2 with BH3(THF), pinacol borane, and LiAlH4 appeared to afford manganese metal. The new complexes M(tBuNNCHCtBuO)2, M(tBuNNCHCiPrO)2, and M(tBuNNCMeCMeO)2 have very promising properties for use as precursors for the growth of the respective metals in atomic layer deposition film growth processes.

Volatility and high thermal stability in mid-to-late first-row transition-metal complexes containing 1,2,5-triazapentadienyl ligands.

Treatment of first-row transition-metal MCl(2) (M = Ni, Co, Fe, Mn, Cr) with 2 equiv of the potassium 1,2,5-triazapentadienyl salts K(tBuNNCHCHNR) (R = tBu, NMe(2)) afforded M(tBuNNCHCHNR)(2) in 18-73% isolated yields after sublimation. The X-ray crystal structures of these compounds show monomeric, tetrahedral molecular geometries, and magnetic moment measurements are consistent with high-spin electronic configurations. Complexes with R = tBu sublime between 155 and 175 °C at 0.05 Torr and have decomposition temperatures that range from 280 to 310 °C, whereas complexes with R = NMe(2) sublime at 105 °C at 0.05 Torr but decompose between 181 and 225 °C. This work offers new nitrogen-rich ligands that are related to widely used ß-diketiminate and 1,3,5-triazapentadienyl ligands and demonstrates new complexes with properties suitable for use in atomic-layer deposition.

Thermal atomic layer deposition of Er2O3 films from a volatile, thermally stable enaminolate precursor.

Thin films of Er2O3 films were grown by atomic layer deposition using the Er precursor tris(1-(dimethylamino)-3,3-dimethylbut-1-en-2-olate)erbium(III) (Er(L1)3), with water as the co-reactant. Saturative, self-limited growth was observed at a substrate temperature of 200 °C for pulse lengths of ≥4.0 s for Er(L1)3 and ≥0.2 s for water. An ALD window was observed from 175 to 225 °C with a growth rate of about 0.25 Å per cycle. Er2O3 films grown at 200 °C on Si(100) and SiO2 substrates with a thickness of 33 nm had root mean square surface roughnesses of 1.75 and 0.75 nm, respectively. Grazing incidence X-ray diffraction patterns showed that the films were composed of polycrystalline Er2O3 at all deposition temperatures on Si(100) and SiO2 substrates. X-ray photoelectron spectroscopy revealed stoichiometric Er2O3, with carbon and nitrogen levels below the detection limits after argon ion sputtering to remove surface impurities. Transmission electron microscopy studies of Er2O3 film growth in nanoscale trenches (aspect ratio = 10) demonstrated conformal coverage.

Efficient hydride and pyrazolyl redistribution upon thermolysis of a calcium complex containing dihydrobis(pyrazolyl)borate ligands.

Thermolysis of CaBp(2)(THF)(2) (THF = tetrahydrofuran) at 190-200 °C and 0.05 Torr leads to a redistribution reaction to afford CaTp(2) (90%) and CaTp(BH(4)) (84%). Treatment of CaTp(BH(4)) with THF affords CaTp(BH(4))(THF)(2) and [CaTp(BH(4))(THF)](4), both of which were structurally characterized. Methanolysis or ethanolysis/hydrolysis of the BH(4)(-)-containing complexes affords [TpCa(HOMe)(2)(µ(4)-B(OMe)(4))Ca(HOMe)(2)Tp][B(OMe)(4)] and [{TpCa}(3){µ(6)-B(OB(OEt)(3))(3)]·EtOH.

Poly(pyrazolyl)aluminate complexes containing aluminum-hydrogen bonds.

The treatment of LiAlH(4) with 2, 3, or 4 equiv of the 3,5-disubstituted pyrazoles Ph(2)pzH or iPr(2)pzH afforded [Li(THF)(2)][AlH(2)(Ph(2)pz)(2)] (97%), [Li(THF)][AlH(Ph(2)pz)(3)] (96%), [Li(THF)(4)][Al(Ph(2)pz)(4)] (95%), and [Li(THF)][AlH(iPr(2)pz)(3)] (89%). The treatment of ZnCl(2) with [Li(THF)][AlH(Ph(2)pz)(3)] afforded Zn(AlH(Ph(2)Pz)(3))H (70%). X-ray crystal structures of these complexes demonstrated κ(2) or κ(3) coordination of the aluminum-based ligands to the Li or Zn ions. The treatment of [Li(THF)][AlH(Ph(2)pz)(3)] with MgBr(2) or CoCl(2) in THF/Et(2)O solutions, by contrast, afforded the pyrazolate transfer products Mg(2)Br(2)(Ph(2)pz)(2)(THF)(3)·2THF (25%) and Co(2)Cl(2)(Ph(2)pz)(2)(THF)(3)·THF (23%) as colorless and blue crystalline solids, respectively. An analogous treatment of [Li(THF)][AlH(Ph(2)pz)(3)] with MCl(2) (M = Mn, Fe, Ni, Cu) afforded metal powders and H(2), illustrating hydride transfer from Al to M as a competing reaction path.

Thermal atomic layer deposition of rhenium nitride and rhenium metal thin films using methyltrioxorhenium.

The growth of rhenium nitride and rhenium metal thin films is presented using atomic layer deposition (ALD) with the precursors methyltrioxorhenium and 1,1-dimethylhydrazine. Saturative, self-limiting growth was determined at 340 °C for pulse times of ≥4.0 s for methyltrioxorhenium and ≥0.1 s for 1,1-dimethylhydrazine. An ALD window was observed from 340 to 350 °C with a growth rate of about 0.60 Å per cycle. Films grown at 340 °C revealed a root mean square surface roughness of 2.7 nm for a 70 nm thick film and possessed a composition of ReN0.14 with low O and C content of 1.6 and 2.6 at%, respectively. Enhanced nucleation on in situ grown TiN, relative to thermal SiO2, enabled a conformality of 98% on high aspect ratio trenched structures. Subjecting the ReN0.14 thin films to thermal or chemical and thermal treatments reduced the nitrogen content to ≤1.6 at%, yielding a film purity of about 96 at% rhenium and resistivities as low as 51 µΩ cm. The Re metal film thicknesses on the trenched structures remained intact during the post-deposition annealing treatments and the films did not delaminate from the substrate surfaces.

Complexes of the [K(18-Crown-6)]+ fragment with bis(tetrazolyl)borate ligands: unexpected boron-nitrogen bond isomerism and associated enforcement of kappa3-N,N',H-ligand chelation.

The syntheses and solid-state structures of K(BH(2)(RCN(4))(2))(18-crown-6) (R = H, Me, NMe(2), and NiPr(2)) are described. Complexes where R = H and Me have B-N bonds to N(1) of the tetrazolyl groups and form one-dimensional polymers, whereas those with R = NMe(2) and NiPr(2) possess isomeric B-N bonds to N(2) of the tetrazolyl moieties and adopt chelating kappa(3)-N,N',H-coordination modes to the potassium ion.

Volatility and high thermal stability in tantalum complexes containing imido, amidinate, and halide or dialkylamide ligands.

Treatment of Ta(NtBu)Cl(3)(py)(2) with 2 equiv of Li(iPrNCMeNiPr) or Li(tBuNCMeNtBu) afforded Ta(NtBu)(iPrNCMeNiPr)(2)Cl and Ta(NtBu)(tBuNCMeNtBu)(2)Cl in 63% and 61% yields, respectively. Treatment of Ta(NtBu)(iPrNCMeNiPr)(2)Cl or Ta(NtBu)(tBuNCMeNtBu)(2)Cl with LiNRR' afforded Ta(NtBu)(iPrNCMeNiPr)(2)(NRR') and Ta(NtBu)(tBuNCMeNtBu)(2)(NRR') in 79-92% yields (R, R' = Me, Et). Treatment of Ta(NtBu)(tBuNCMeNtBu)(2)Cl with AgBF(4) afforded Ta(NtBu)(tBuNCMeNtBu)(2)F in 54% yield, while treatment of Ta(NtBu)(tBuNCMeNtBu)(2)Cl with BBr(3) afforded Ta(NtBu)(tBuNCMe-NtBu)(2)Br in 68% yield. X-ray crystal structures of Ta(NtBu)(tBuNCMeNtBu)(2)F and Ta(NtBu)(tBuNCMeNtBu)(2)Br revealed that the amidinate ligands exhibit eta(2)-coordination, and that the imido and halide ligands are cis to each other within the distorted octahedral structures. NMR studies indicated that the other complexes have analogous structures. Additionally, variable temperature NMR studies revealed that some of the complexes undergo amidinate rearrangement. The enthalpies, entropies, and free energies of activation for these rearrangements were calculated for Ta(NtBu)(tBuNCMeNtBu)(2)X (X = F, Cl, Br). When X = F, DeltaH(double dagger) = 9.1 +/- 0.4 kcal/mol, DeltaS(double dagger) = -20.5 +/- 1.6 cal/mol x K, and DeltaG(double dagger)(298 K) = 15.3 +/- 0.7 kcal/mol. For X = Cl, DeltaH(double dagger) = 12.4 +/- 0.3 kcal/mol, DeltaS(double dagger) = -20.2 +/- 0.8 cal/mol x K, and DeltaG(double dagger)(298 K) = 18.4 +/- 0.3 kcal/mol. When X = Br, DeltaH(double dagger) = 12.5 +/- 0.5 kcal/mol, DeltaS(double dagger) = -21.7 +/- 1.5 cal/mol x K, and DeltaG(double dagger)(298 K) = 19.0 +/- 0.7 kcal/mol. All of the complexes are volatile, and they sublime between 120 and 203 degrees C. In addition, Ta(NtBu)(iPrNCMeNiPr)(2)NMe(2) has a decomposition point that is 65-160 degrees C higher than widely used film growth precursors and is therefore a promising candidate for use in chemical vapor deposition and atomic layer deposition film growth techniques.

Volatility, high thermal stability, and low melting points in heavier alkaline earth metal complexes containing tris(pyrazolyl)borate ligands.

Treatment of MI(2) (M = Ca, Sr) or BaI(2)(THF)(3) with 2 equiv of potassium tris(3,5-diethylpyrazolyl)borate (KTp(Et2)) or potassium tris(3,5-di-n-propylpyrazolyl)borate (KTp(nPr2)) in hexane at ambient temperature afforded CaTp(Et2)(2) (64%), SrTp(Et2)(2) (64%), BaTp(Et2)(2) (67%), CaTp(nPr2)(2) (51%), SrTp(nPr2)(2) (75%), and BaTp(nPr2)(2) (39%). Crystal structure determinations of CaTp(Et2)(2), SrTp(Et2)(2), and BaTp(Et2)(2) revealed monomeric structures. X-ray structural determinations for strontium tris(pyrazolyl)borate (SrTp(2)) and barium tris(pyrazolyl)borate ([BaTp(2)](2)) show that SrTp(2) exists as a monomer and [BaTp(2)](2) exists as a dimer containing two bridging Tp ligands. The thermogravimetric analysis traces, preparative sublimations, and melting point/decomposition determinations demonstrate generally very high thermal stabilities and reasonable volatilities. SrTp(2) has the highest volatility with a sublimation temperature of 200 degrees C/0.05 Torr. [BaTp(2)](2) is the least thermally stable with a decomposition temperature of 330 degrees C and a percent residue of 46.5% at 450 degrees C in the thermogravimetric analysis trace. SrTp(Et2)(2), BaTp(Et2)(2), CaTp(nPr2)(2), SrTp(nPr2)(2), and BaTp(nPr2)(2) vaporize as liquids between 210 and 240 degrees C at 0.05 Torr. BaTp(Et2)(2) and BaTp(nPr2)(2) decompose at about 375 degrees C, whereas MTp(Et2)(2) and MTp(nPr2)(2) (M = Ca, Sr) are stable to >400 degrees C. Several of these new complexes represent promising precursors for chemical vapor deposition and atomic layer deposition film growth techniques.

Optical properties of Al2O3 thin films grown by atomic layer deposition.

We employed the atomic layer deposition technique to grow Al(2)O(3) films with nominal thicknesses of 400, 300, and 200 nm on silicon and soda lime glass substrates. The optical properties of the films were investigated by measuring reflection spectra in the 400-1800 nm wavelength range, followed by numerical fitting assuming the Sellmeier formula for the refractive index of Al(2)O(3). The films grown on glass substrates possess higher refractive indices as compared to the films on silicon. Optical waveguiding is demonstrated, confirming the feasibility of high-index contrast planar waveguides fabricated by atomic layer deposition.

Aluminum dihydride complexes and their unexpected application in atomic layer deposition of titanium carbonitride films.

Aluminum dihydride complexes containing amido-amine ligands were synthesized and evaluated as potential reducing precursors for thermal atomic layer deposition (ALD). Highly volatile monomeric complexes AlH2(tBuNCH2CH2NMe2) and AlH2(tBuNCH2CH2NC4H8) are more thermally stable than common Al hydride thin film precursors such as AlH3(NMe3). ALD film growth experiments using TiCl4 and AlH2(tBuNCH2CH2NMe2) produced titanium carbonitride films with a high growth rate of 1.6-2.0 Å per cycle and resistivities around 600 µΩ cm within a very wide ALD window of 220-400 °C. Importantly, film growth proceeded via self-limited surface reactions, which is the hallmark of an ALD process. Root mean square surface roughness was only 1.3% of the film thickness at 300 °C by atomic force microscopy. The films were polycrystalline with low intensity, broad reflections corresponding to the cubic TiN/TiC phase according to grazing incidence X-ray diffraction. Film composition by X-ray photoelectron spectroscopy was approximately TiC0.8N0.5 at 300 °C with small amounts of Al (6 at%), Cl (4 at%) and O (4 at%) impurities. Remarkably, self-limited growth and low Al content was observed in films deposited well above the solid-state thermal decomposition point of AlH2(tBuNCH2CH2NMe2), which is ca. 185 °C. Similar growth rates, resistivities, and film compositions were observed in ALD film growth trials using AlH2(tBuNCH2CH2NC4H8).

Low Temperature, Selective Atomic Layer Deposition of Nickel Metal Thin Films.

We report the growth of nickel metal films by atomic layer deposition (ALD) employing bis(1,4-di- tert-butyl-1,3-diazadienyl)nickel and tert-butylamine as the precursors. A range of metal and insulating substrates were explored. An initial deposition study was carried out on platinum substrates. Deposition temperatures ranged from 160 to 220 °C. Saturation plots demonstrated self-limited growth for both precursors, with a growth rate of 0.60 Å/cycle. A plot of growth rate versus substrate temperature showed an ALD window from 180 to 195 °C. Crystalline nickel metal was observed by X-ray diffraction for a 60 nm thick film deposited at 180 °C. Films with thicknesses of 18 and 60 nm grown at 180 °C showed low root mean square roughnesses (<2.5% of thicknesses) by atomic force microscopy. X-ray photoelectron spectroscopies of 18 and 60 nm thick films deposited on platinum at 180 °C revealed ionizations consistent with nickel metal after sputtering with argon ions. The nickel content in the films was >97%, with low levels of carbon, nitrogen, and oxygen. Films deposited on ruthenium substrates displayed lower growth rates than those observed on platinum substrates. On copper substrates, discontinuous island growth was observed at ≤1000 cycles. Film growth was not observed on insulating substrates under any conditions. The new nickel metal ALD procedure gives inherently selective deposition on ruthenium and platinum from 160 to 220 °C.

Less sensitive oxygen-rich organic peroxides containing geminal hydroperoxy groups.

A series of oxygen-rich organic peroxide compounds each containing two bis(hydroperoxy)methylene groups is described. Energetic testing shows that these compounds are much less sensitive toward impact and friction than existing classes of organic peroxides. The compounds are highly energetic, which may lead to practical peroxide-based explosives.

Structural Diversity in the Reaction of Mono- and Disubstituted Pyrazoles with Titanium Tetrachloride. Importance of Hydrogen Bonding and Trends in cis/trans Geometry of Binary Adducts with Unidentate Ligands.

Treatment of titanium tetrachloride with 3,5-di-tert-butylpyrazole affords the complexes [3,5-(C(CH(3))(3))(2)C(3)H(3)N(2)](2)[TiCl(6)] and (3,5-(C(CH(3))(3))(2)C(3)HN(2))(2)TiCl(2) in 37 and 42% yields, respectively. An analogous reaction with 3,5-dimethylpyrazole, 3-methylpyrazole, 4-bromopyrazole, and 4-iodopyrazole leads to the formation of corresponding TiCl(4)L(2) binary adducts in 30-86% yields. Crystal structures of [3,5-(C(CH(3))(3))(2)C(3)H(3)N(2)](2)[TiCl(6)], (3,5-(C(CH(3))(3))(2)C(3)HN(2))(2)TiCl(2), TiCl(4)(3,5-(CH(3))(2)C(3)H(2)N(2))(2), and TiCl(4)(4-IC(3)H(3)N(2))(2) were determined. [3,5-(C(CH(3))(3))(2)C(3)H(3)N(2)](2)[TiCl(6)] crystallizes in the space group C2/c with a = 18.892(4) Å, b = 7.1200(10) Å, c = 24.461(6) Å, beta = 103.78(2) degrees, and Z = 4. (3,5-(C(CH(3))(3))(2)C(3)HN(2))(2)TiCl(2) crystallizes in the space group P2(1)/n with a = 12.283(10) Å, b = 17.891(8) Å, c = 12.580(6) Å, beta = 90.96(4) degrees, and Z = 4. TiCl(4)(3,5-(CH(3))(2)C(3)H(2)N(2))(2) crystallizes in the space group C2/c with a = 12.087(2) Å, b = 12.922(3) Å, c = 10.403(2) Å, beta = 92.08(2) degrees, and Z = 4. TiCl(4)(4-IC(3)H(3)N(2))(2) crystallizes in the space group C2/c with a = 9.252(2) Å, b = 8.660(2) Å, c = 19.652(4) Å, beta = 102.14(3) degrees, and Z = 4. An analysis of factors governing the cis/trans geometry of MCl(4)L(2) (M = Ti, Zr, Hf) complexes is offered.

Synthesis, Structure, and Properties of Group 4 and 5 Metal Pyrazolato Chloride Complexes.

Treatment of titanium tetrachloride with 3,5-di-tert-butylpyrazole (2 equiv) and triethylamine (2 equiv) in toluene afforded dichlorobis(3,5-di-tert-butylpyrazolato)titanium(IV) (93%). A similar reaction with 3 equiv of 3,5-di-tert-butylpyrazole and triethylamine gave chlorotris(3,5-di-tert-butylpyrazolato)titanium(IV) (91%). Trichloro(3,5-di-tert-butylpyrazolato)titanium(IV) was prepared in 93% yield through reaction of titanium tetrachloride with 1-trimethylsilyl-3,5-di-tert-butylpyrazole (1 equiv) in toluene. Treatment of zirconium and hafnium tetrachlorides with 3,5-di-tert-butylpyrazolatopotassium (4 equiv) in toluene afforded the homoleptic pyrazolato complexes tetrakis(3,5-di-tert-butylpyrazolato)zirconium(IV) (90%) and tetrakis(3,5-di-tert-butylpyrazolato)hafnium(IV) (68%). Analogous reaction of 3,5-di-tert-butylpyrazolatopotassium (>/=3 equiv) with niobium and tantalum pentachlorides gave dichlorotris(3,5-di-tert-butylpyrazolato)niobium(V) (98%) and dichlorotris(3,5-di-tert-butylpyrazolato)tantalum(V) (83%). Reaction of the complexes tetrakis(3,5-di-tert-butylpyrazolato)metal(IV) (metal = Zr, Hf) and dichlorotris(3,5-di-tert-butylpyrazolato)metal(V) (metal = Nb, Ta) with the metal tetrachlorides and metal pentachlorides, respectively, in dichloromethane afforded the complexes chlorotris(3,5-di-tert-butylpyrazolato)metal(IV) (metal = Zr, 89%; Hf, 97%) and trichlorobis(3,5-di-tert-butylpyrazolato)metal(V) (metal = Nb, 90%; Ta, 84%). Crystal structures of trichloro(3,5-di-tert-butylpyrazolato)titanium(IV), chlorotris(3,5-di-tert-butylpyrazolato)hafnium(IV), and dichlorotris(3,5-di-tert-butylpyrazolato)niobium(V) were determined. Trichloro(3,5-di-tert-butylpyrazolato)titanium(IV) crystallizes in the space group C2/c with a = 22.6542(8) Å, b = 9.5147(3) Å, c = 16.5329(6) Å, beta = 113.5780(10) degrees, and Z = 8. Chlorotris(3,5-di-tert-butylpyrazolato)hafnium(IV) crystallizes in the space group P2(1)/c with a = 10.4529(7) Å, b = 10.1437(6) Å, c = 36.986(3) Å, beta = 93.3080(10) degrees, and Z = 4. Dichlorotris(3,5-di-tert-butylpyrazolato)niobium(V) crystallizes in the space group P2(1)/c with a = 10.2051(3) Å, b = 38.3650(12) Å, c = 9.7585(3) Å, beta = 93.3280(10) degrees, and Z = 4. Kinetic analysis of a dynamic process observed for dichlorotris(3,5-di-tert-butylpyrazolato)niobium(V) is described. The results of this study suggest that eta(2)-pyrazolato donors may be useful ancillary ligands in the development of new reactive early transition metal complexes.