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1.
Opt Express ; 32(2): 2271-2280, 2024 Jan 15.
Article in English | MEDLINE | ID: mdl-38297761

ABSTRACT

In this article, we report a Si/Ge waveguide phototransistor with high responsivity and low dark current under low bias voltages, due to an engineered electric field distribution. The photodetector consists of n-i-p-i-n doping regions and shows a responsivity of 606 A/W at 1 V bias, and 1032 A/W at 2.8V bias with an input optical power of -50 dBm, and dark current of 4 µA and 42 µA respectively. This is achieved by placing two p+-doped regions in the silicon slab region beneath the Ge epitaxial layer. A measured small signal -3 dB bandwidth of 1.5 GHz with a -80 dBc/Hz phase noise response at 1 KHz frequency offset were demonstrated experimentally.

2.
Opt Lett ; 49(5): 1345-1348, 2024 Mar 01.
Article in English | MEDLINE | ID: mdl-38427009

ABSTRACT

We present a systematic photonic filter design approach by deploying pole-zero optimization. The filter transfer function is derived from its specifications by formulating closed-form optimization objective functions and subsequently translating them into optical design parameters. Two distinct filter examples, namely Chebyshev and elliptic filters, are considered for the design and validation. A compact reconfigurable three-pole photonic filter is fabricated on a silicon photonic platform to illustrate the proposed design technique including transmission tunability. Integrated thermal phase shifters coupled with micro-ring resonators are used to reconfigure filter responses. A well-matched experimental demonstration is presented to validate the proposed tuning method. We achieved a sharp out-of-band edge rejection of at least 20 and 40 dB for the elliptic and Chebyshev filter, respectively.

3.
Opt Express ; 30(17): 30164-30175, 2022 Aug 15.
Article in English | MEDLINE | ID: mdl-36242125

ABSTRACT

Recent advances in silicon photonic components operating in the thulium-doped fiber amplifier (TDFA) wavelength regime around 2-µm have shown that these wavelengths hold great promise for on-chip photonic systems. Here we present our work on characterizing a Mach-Zehnder interferometer coupled silicon photonic ring resonator operating in the TDFA window for optical time delay applications. We describe the optical transmission and variable time delay properties of the resonator, including a detailed characterization and comparison of the directional coupler and Mach-Zehnder interferometer base components at both 1930 and 1550 nm wavelengths. The results show tuning of a ring from a 190-ps peak time delay at a resonant extinction ratio of 5.1-dB to a 560-ps peak time delay at an extinction ratio of 11.0-dB, in good agreement with optical models of the device. These results demonstrate significant promise towards the future application of TDFA band devices in optical time delay systems.

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