Single-Molecule Desorption Studies of Poly(acrylic acid) at Electrolyte/Oxide/TiAlN Interfaces.

The presented studies correlate the surface chemistry of electrochemically oxidized TiAlN hard coatings with the desorption forces of poly(acrylic acid) (PAA) at the electrolyte/oxide/TiAlN interface. Atomic force microscopy (AFM)-based single-molecule force spectroscopy (SMFS) was performed at different pH values to investigate surface chemistry-induced changes in desorption force. The chemical state was characterized by X-ray photoemission spectroscopy and electrochemical analysis. The results show that the desorption forces continuously decrease with increasing pH in the range from pH 5 to 9. The comparison of the desorption forces on rf-sputtered titanium dioxide and aluminum oxide films shows that the electrochemically oxidized surface of TiAlN, in agreement with the revealed surface composition, shows interfacial adhesive properties in contact with PAA and water that resemble a pure titanium oxide layer. Load rate-dependent measurements were performed to analyze both the free energy barrier and the transition state distance.

Potential Precursor Alternatives to the Pyrophoric Trimethylaluminium for the Atomic Layer Deposition of Aluminium Oxide.

New precursor chemistries for the atomic layer deposition (ALD) of aluminium oxide are reported as potential alternatives to the pyrophoric trimethylaluminium (TMA) which is to date a widely used Al precursor. Combining the high reactivity of aluminium alkyls employing the 3-(dimethylamino)propyl (DMP) ligand with thermally stable amide ligands yielded three new heteroleptic, non-pyrophoric compounds [Al(NMe2 )2 (DMP)] (2), [Al(NEt2 )2 (DMP)] (3, BDEADA) and [Al(NiPr2 )2 (DMP)] (4), which combine the properties of both ligand systems. The compounds were synthesized and thoroughly chemically characterized, showing the intramolecular stabilization of the DMP ligand as well as only reactive Al-C and Al-N bonds, which are the key factors for the thermal stability accompanied by a sufficient reactivity, both being crucial for ALD precursors. Upon rational variation of the amide alkyl chains, tunable and high evaporation rates accompanied by thermal stability were found, as revealed by thermal evaluation. In addition, a new and promising plasma enhanced (PE)ALD process using BDEADA and oxygen plasma in a wide temperature range from 60 to 220 °C is reported and compared to that of a modified variation of the TMA, namely [AlMe2 (DMP)] (DMAD). The resulting Al2 O3 layers are of high density, smooth, uniform, and of high purity. The applicability of the Al2 O3 films as effective gas barrier layers (GBLs) was successfully demonstrated, considering that coating on polyethylene terephthalate (PET) substrates yielded very good oxygen transmission rates (OTR) with an improvement factor of 86 for a 15 nm film by using DMAD and a factor of 25 for a film thickness of just 5 nm by using BDEDA compared to bare PET substrates. All these film attributes are of the same quality as those obtained for the industrial precursor TMA, rendering the new precursors safe and potential alternatives to TMA.

Determination of the refractive indices of ionic liquids by ellipsometry, and their application as immersion liquids.

In principle, ionic liquids (ILs) can serve as stable and less harmful high-refractive-index liquids (n>1.60). However, detailed information on their complex refractive indices and dispersions is rare. Therefore, we determined the optical constants of six commercially available low-index ILs (n ca. 1.4) and two high-index ILs (n max. 2.38) synthesized by us utilizing spectroscopic ellipsometry. Furthermore, we tested the ILs as immersion liquids for different photonic crystals. Analysis of the optical properties of these photonic crystals after infiltration demonstrates potential applications of ILs in optofluidics and as index-matching liquids.

Unearthing [3-(Dimethylamino)propyl]aluminium(III) Complexes as Novel Atomic Layer Deposition (ALD) Precursors for Al2 O3 : Synthesis, Characterization and ALD Process Development.

Identification and synthesis of intramolecularly donor-stabilized aluminium(III) complexes, which contain a 3-(dimethylamino)propyl (DMP) ligand, as novel atomic layer deposition (ALD) precursors has enabled the development of new and promising ALD processes for Al2 O3 thin films at low temperatures. Key for this promising outcome is the nature of the ligand combination that leads to heteroleptic Al complexes encompassing optimal volatility, thermal stability and reactivity. The first ever example of the application of this family of Al precursors for ALD is reported here. The process shows typical ALD like growth characteristics yielding homogeneous, smooth and high purity Al2 O3 thin films that are comparable to Al2 O3 layers grown by well-established, but highly pyrophoric, trimethylaluminium (TMA)-based ALD processes. This is a significant development based on the fact that these compounds are non-pyrophoric in nature and therefore should be considered as an alternative to the industrial TMA-based Al2 O3 ALD process used in many technological fields of application.

Nanostructured Er2O3 thin films grown by metalorganic chemical vapour deposition.

Metalorganic chemical vapor deposition (MOCVD) of nanostructured Er2O3 thin films was performed using the Er-tris-guanidinate precursor [Er(DPDMG)3] (DPDMG = diisopropyl-2-dimethylamidoguanidinato) as the Er source and oxygen. Film deposition was carried out on Si(100) and quartz glass substrates and the process parameters namely temperature, pressure and oxygen flow rate were varied. The resulting thin films were characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM) for investigating the crystallinity and morphology, respectively. The chemical composition of the film was investigated by X-ray photoelectron spectroscopy (XPS) measurements. Transmittance and absorption spectra of the 600 degrees C film grown on glass substrates were performed by UV-vis measurements revealing more than 80% transmittance. The potential of Er2O3 thin films as gate dielectrics was verified by carrying out capacitance-voltage (C-V) and current-voltage (I-V) measurements. Dielectric constants estimated from the accumulation capacitance were found to be in the range of 10-12 in AC frequencies of 1 MHz down to 10 kHz and the leakage current of the order of 2 x 10(-8) A/cm2 at the applied field of 1 MV cm(-1) was measured for films deposited under optimised process conditions. The low leakage current and high dielectric constant implies good quality of the Er2O3 layers relevant for high-k applications. These layers were found to be paramagnetic with a slightly reduced magnetic moment of the Er3+ ions.

AFM-IR investigation of thin PECVD SiO x films on a polypropylene substrate in the surface-sensitive mode.

Thin silicon oxide films deposited on a polypropylene substrate by plasma-enhanced chemical vapor deposition were investigated using atomic force microscopy-based infrared (AFM-IR) nanospectroscopy in contact and surface-sensitive mode. The focus of this work is the comparison of the different measurement methods (i.e., contact mode and surface-sensitive mode) with respect to the chemical surface sensitivity. The use of the surface-sensitive mode in AFM-IR shows an enormous improvement for the analysis of thin films on the IR-active substrate. As a result, in this mode, the signal of the substrate material could be significantly reduced. Even layers that are so thin that they could hardly be measured in the contact mode can be analyzed with the surface-sensitive mode.

Nickel-Induced Reduced Graphene Oxide Nanoribbon Formation on Highly Ordered Pyrolytic Graphite for Electronic and Magnetic Applications.

The development of nanoribbon-like structures is an effective strategy to harness the potential benefits of graphenic materials due to their excellent electrical properties, advantageous edge sites, rapid electron transport, and large specific area. Herein, parallel and connected magnetic nanostructured nanoribbons are obtained through the synthesis of reduced graphene oxide (rGO) using NiCl2 as a precursor with potential applications in nascent electronic and magnetic devices. Several analytical techniques have been used for the thorough characterization of the modified surfaces. Atomic force microscopy (AFM) shows the characteristic topographical features of the nanoribbons. While X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and Raman spectroscopy provided information on the chemical state of Ni and graphene-like structures, magnetic force microscopy (MFM) and scanning Kelvin probe microscopy (SKPFM) confirmed the preferential concentration of Ni onto rGO nanoribbons. These results indicate that the synthesized material shows 1D ordering of nickel nanoparticles (NiNPs)-decorating tiny rGO flakes into thin threads and the subsequent 2D arrangement of the latter into parallel ribbons following the topography of the HOPG basal plane.

Liquid-phase epitaxy of multicomponent layer-based porous coordination polymer thin films of [M(L)(P)0.5] type: importance of deposition sequence on the oriented growth.

The progressive liquid-phase layer-by-layer (LbL) growth of anisotropic multicomponent layer-based porous coordination polymers (PCPs) of the general formula [M(L)(P)(0.5)] (M: Cu(2+), Zn(2+); L: dicarboxylate linker; P: dinitrogen pillar ligand) was investigated by using either pyridyl- or carboxyl-terminated self-assembled monolayers (SAMs) on gold substrates as templates. It was found that the deposition of smooth, highly crystalline, and oriented multilayer films of these PCPs depends on the conditions at the early growth cycles. In the case of a two-step process with an equimolar mixture of L and P, growth along the [001] direction is strongly preferred. However, employing a three-step scheme with full separation of all components allows deposition along the [100] direction on carboxyl-terminated SAMs. Interestingly, the growth of additional layers on top of previously grown oriented seeding layers proved to be insensitive to the particular growth scheme and full retention of the initial orientation, either along the [001] or [100] direction, was observed. This homo- and heteroepitaxial LbL growth allows full control over the orientation and the layer sequence, including introduction of functionalized linkers and pillars.

Luminescent Nd2S3 thin films: a new chemical vapour deposition route towards rare-earth sulphides.

Neodymium sulphide (Nd2S3) belongs to the exciting class of rare earth sulphides (RES) and is projected to have a serious potential in a wide spectrum of application either in pure form or as dopant. We demonstrate a facile and first growth of Nd2S3 thin films via metal-organic chemical vapour deposition (MOCVD) at moderate process conditions using two new Nd precursors, namely tris(N,N'-diisopropyl-2-dimethylamido-guanidinato)Nd(iii) and tris(N,N'-diisopropyl-acetamidinato)Nd(iii). The promising thermal properties and suitable reactivity of both Nd precursors towards elemental sulphur enabled the formation of high purity γ-Nd2S3. While the process temperature for film growth ranged from 400 °C to 600 °C, the films were crystalline above 500 °C. We also demonstrate that the as-deposited γ-Nd2S3 are luminescent, with the optical bandgap ranging from 2.3 eV to 2.5 eV. The process circumvents post-deposition treatments such as sulfurisation to fabricate the desired Nd2S3, which paves the way for large scale synthesis and also opens up new avenues for exploring the potential of this class of materials with properties for functional applications.

Correction: Luminescent Nd2S3 thin films: a new chemical vapour deposition route towards rare-earth sulphides.

Correction for 'Luminescent Nd2S3 thin films: a new chemical vapour deposition route towards rare-earth sulphides' by Stefan Cwik et al., Dalton Trans., 2019, 48, 2926-2938.

PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads.

A study on the plasma-enhanced atomic layer deposition of amorphous inorganic oxides SiO2 and Al2O3 on polypropylene (PP) was carried out with respect to growth taking place at the interface of the polymer substrate and the thin film employing in situ quartz-crystal microbalance (QCM) experiments. A model layer of spin-coated PP (scPP) was deposited on QCM crystals prior to depositions to allow a transfer of findings from QCM studies to industrially applied PP foil. The influence of precursor choice (trimethylaluminum (TMA) vs [3-(dimethylamino)propyl]-dimethyl aluminum (DMAD)) and of plasma pretreatment on the monitored QCM response was investigated. Furthermore, dyads of SiO2/Al2O3, using different Al precursors for the Al2O3 thin-film deposition, were investigated regarding their barrier performance. Although the growth of SiO2 and Al2O3 from TMA on scPP is significantly hindered if no oxygen plasma pretreatment is applied to the scPP prior to depositions, the DMAD process was found to yield comparable Al2O3 growth directly on scPP similar to that found on a bare QCM crystal. From this, the interface formed between the Al2O3 and the PP substrate is suggested to be different for the two precursors TMA and DMAD due to different growth modes. Furthermore, the residual stress of the thin films influences the barrier properties of SiO2/Al2O3 dyads. Dyads composed of 5 nm Al2O3 (DMAD) + 5 nm SiO2 exhibit an oxygen transmission rate (OTR) of 57.4 cm3 m-2 day-1, which correlates with a barrier improvement factor of 24 against 5 when Al2O3 from TMA is applied.

Note: Ion-induced secondary electron emission from oxidized metal surfaces measured in a particle beam reactor.

The secondary electron emission of metals induced by slow ions is characterized in a beam chamber by means of two coaxial semi-cylindrical electrodes with different apertures. The voltages of the outer electrode (screening), inner electrode (collector), and sample holder (target) were set independently in order to measure the effective yield of potential and kinetic electron emissions during ion bombardment. Aluminum samples were exposed to quantified beams of argon ions up to 2000 eV and to oxygen atoms and molecules in order to mimic the plasma-surface interactions on metallic targets during reactive sputtering. The variation of electron emission yield was correlated to the ion energy and to the oxidation state of Al surfaces. This system provides reliable measurements of the electron yields in real time and is of great utility to explore the fundamental surface processes during target poisoning occurring in reactive magnetron sputtering applications.

Particle beam experiments for the analysis of reactive sputtering processes in metals and polymer surfaces.

A beam experiment is presented to study heterogeneous reactions relevant to plasma-surface interactions in reactive sputtering applications. Atom and ion sources are focused onto the sample to expose it to quantified beams of oxygen, nitrogen, hydrogen, noble gas ions, and metal vapor. The heterogeneous surface processes are monitored in situ by means of a quartz crystal microbalance and Fourier transform infrared spectroscopy. Two examples illustrate the capabilities of the particle beam setup: oxidation and nitriding of aluminum as a model of target poisoning during reactive magnetron sputtering, and plasma pre-treatment of polymers (PET, PP).

Sc2O3, Er2O3, and Y2O3 thin films by MOCVD from volatile guanidinate class of rare-earth precursors.

Alternative novel precursor chemistries for the vapor phase deposition of rare-earth (RE) oxide thin films were developed by synthesising the homoleptic guanidinate compounds tris(N,N'-diisopropyl-2-dimethylamidoguanidinato)-scandium(III) [Sc(DPDMG)(3)] (1), tris(N,N'-diisopropyl-2-dimethylamidoguanidinato)-erbium(III), [Er(DPDMG)(3)] (2) and tris(N,N'-diisopropyl-2-dimethylamidoguanidinato)-yttrium(III), [Y(DPDMG)(3)] (3). All three compounds are monomeric as revealed by single crystal X-ray diffraction (XRD) analysis, nuclear magnetic resonance (NMR) and electron impact mass spectrometry (EI-MS). The thermal analysis revealed that the compounds are volatile and very stable under evaporation conditions. Therefore the complexes were evaluated as precursors for the growth of Sc(2)O(3), Er(2)O(3) and Y(2)O(3) thin films, respectively, by metal-organic chemical vapor deposition (MOCVD). Uniform Sc(2)O(3), Er(2)O(3) and Y(2)O(3) films on Si(100) substrates with reproducible quality were grown by MOCVD by the combination of the respective guanidinate precursors and oxygen in the temperature range 350-700 °C. The structural, morphological, compositional and electrical properties of the films were investigated in detail. The most relevant film properties are highlighted in relation to the distinct advantages of the novel precursor chemistries in comparison to the commonly used literature known RE precursors. This study shows that compounds 1-3 are very good precursors for MOCVD yielding Sc(2)O(3), Er(2)O(3) and Y(2)O(3) thin films which are stoichiometric and display suitable electrical properties for their potential use as high dielectric constant (high-k) materials.