RESUMEN
In this work, the global kinetics and the exchange of protons and free solvent at the film/electrolyte interface were investigated when a PPy film doped with HPA (heteropolyanions) is polarized. The ionic and electronic transfers for the PPy-HPA system are fast because the determined values of the resistances are relatively low (a few ohms). Depending on the applied potential, the global kinetics is controlled by both the ionic and electronic transfers. The transport effects were neglected here because the prepared films were very thin. Protons play an important role in charge compensation whatever the imposed potential on the PPy-HPA film. This phenomenon results from the acidic-basic properties of the SiMo(12)O(40)(4-) reduced species. A small quantity of water was also shown to be involved in the film reaction process.
Asunto(s)
Electricidad , Polímeros/química , Pirroles/química , Electrodos , Electrólitos/química , Cinética , Oxidación-Reducción , Polielectrolitos , ProtonesRESUMEN
Pursuing high-level doping without deteriorating crystallinity is prohibitively difficult but scientifically crucial to unleashing the hidden power of materials. This study demonstrates an effective route for maintaining lattice integrity during the combustion chemical vapor deposition of highly conductive boron-doped diamonds (BDDs) through laser vibrational excitation of a growth-critical radical, boron dihydride (BH2). The improved diamond crystallinity is attributed to a laser-enabled, thermal nonequilibrium suppression of the relative abundance of boron hydrides (BH), whose excessive presence induces boron segregation and disturbs the crystallization. The BDDs show a boron concentration of 4.3 × 1021 cm-3, a film resistivity of 28.1 milliohm·cm, and hole mobility of 55.6 cm2 V-1 s-1, outperforming a commercial BDD. The highly conductive and crystalline BDDs exhibit enhanced efficiency in sensing glucose, confirming the advantages of laser excitation in producing high-performance BDD sensors. Regaining crystallinity with laser excitation in doping process could remove the long-standing bottlenecks in semiconductor industry.