RESUMEN
Tin-based perovskite, which exhibits narrower bandgap and comparable photophysical properties to its lead analogs, is one of the most forward-looking lead-free semiconductor materials. However, the poor oxidative stability of tin perovskite hinders the development toward practical application. In this work, the effect of pseudohalide anions on the stability and emission properties of single-layer 2D tin perovskite nanoplates with chemical formula TEA2 SnI4 (TEA = 2-thiophene-ethylammonium) is reported. The results reveal that ammonium thiocyanate (NH4 SCN) is the most effective additive in enhancing the stability and photoluminescence quantum yield of 2D TEA2 SnI4 (23 ± 3%). X-Ray photoelectron spectroscopic investigations on the thiocyanate passivated TEA2 SnI4 nanoplate show less than a 1% increase of Sn4+ signal upon 30 min exposure to air under ambient conditions (298 K, humidity ≈70%). Furthermore, no noticeable decrease in emission intensity of the nanoplate is observed after 20 h in air. The SCN- passivation during the growth stage of TEA2 SnI4 is proposed to play a crucial role in preventing the oxidation of Sn2+ and hence boosts both stability and photoluminescence yield of tin perovskite nanoplates.
RESUMEN
Time-of-flight secondary-ion mass spectrometry (ToF-SIMS) has been used for gaining insights into perovskite solar cells (PSCs). However, the importance of selecting ion beam parameters to eliminate artifacts in the resulting depth profile is often overlooked. In this work, significant artifacts were identified with commonly applied sputter sources, i.e., an O2+ beam and an Ar-gas cluster ion beam (Ar-GCIB), which could lead to misinterpretation of the PSC structure. On the other hand, polyatomic C60+ and Ar+ ion beams were found to be able to produce depth profiles that properly reflect the distribution of the components. On the basis of this validated method, differences in component distribution, depending on the fabrication processes, were identified and discussed. The solvent-engineering process yielded a homogeneous film with higher device performance, but sequential deposition led to a perovskite layer sandwiched by methylammonium-deficient layers that impeded the performance. For device degradation, it was found that most components remained intact at their original position except for iodide. This result unambiguously indicated that iodide diffusion was one of the key factors governing the device lifetime. With the validated parameters provided, ToF-SIMS was demonstrated as a powerful tool to unveil the structure variation amid device performance and during degradation, which are crucial for the future development of PSCs.