1.
Microsc Microanal
; 18(4): 905-11, 2012 Aug.
Artículo
en Inglés
| MEDLINE
| ID: mdl-22831653
RESUMEN
We present a technique for the direct deposition of nanoporous GaN particles on Si substrates without requiring any post-growth treatment. The internal morphology of the nanoporous GaN particles deposited on Si substrates by using a simple chemical vapor deposition approach was investigated, and straight nanopores with diameters ranging between 50 and 100 nm were observed. Cathodoluminescence characterization revealed a sharp and well-defined near band-edge emission at â¼365 nm. This approach simplifies other methods used for this purpose, such as etching and corrosion techniques that can damage the semiconductor structure and modify its properties.