RESUMEN
In a stack of atomically thin van der Waals layers, introducing interlayer twist creates a moiré superlattice whose period is a function of twist angle. Changes in that twist angle of even hundredths of a degree can dramatically transform the system's electronic properties. Setting a precise and uniform twist angle for a stack remains difficult; hence, determining that twist angle and mapping its spatial variation is very important. Techniques have emerged to do this by imaging the moiré, but most of these require sophisticated infrastructure, time-consuming sample preparation beyond stack synthesis, or both. In this work, we show that torsional force microscopy (TFM), a scanning probe technique sensitive to dynamic friction, can reveal surface and shallow subsurface structure of van der Waals stacks on multiple length scales: the moirés formed between bi-layers of graphene and between graphene and hexagonal boron nitride (hBN) and also the atomic crystal lattices of graphene and hBN. In TFM, torsional motion of an Atomic Force Microscope (AFM) cantilever is monitored as it is actively driven at a torsional resonance while a feedback loop maintains contact at a set force with the sample surface. TFM works at room temperature in air, with no need for an electrical bias between the tip and the sample, making it applicable to a wide array of samples. It should enable determination of precise structural information including twist angles and strain in moiré superlattices and crystallographic orientation of van der Waals flakes to support predictable moiré heterostructure fabrication.
RESUMEN
Two-dimensional (2D) semiconducting transition-metal dichalcogenides (TMDCs) are an exciting platform for excitonic physics and next-generation electronics, creating a strong demand to understand their growth, doping, and heterostructures. Despite significant progress in solid-source (SS-) and metal-organic chemical vapor deposition (MOCVD), further optimization is necessary to grow highly crystalline 2D TMDCs with controlled doping. Here, we report a hybrid MOCVD growth method that combines liquid-phase metal precursor deposition and vapor-phase organo-chalcogen delivery to leverage the advantages of both MOCVD and SS-CVD. Using our hybrid approach, we demonstrate WS2 growth with tunable morphologiesâfrom separated single-crystal domains to continuous monolayer filmsâon a variety of substrates, including sapphire, SiO2, and Au. These WS2 films exhibit narrow neutral exciton photoluminescence line widths down to 27-28 meV and room-temperature mobility up to 34-36 cm2 V-1 s-1. Through simple modifications to the liquid precursor composition, we demonstrate the growth of V-doped WS2, MoxW1-xS2 alloys, and in-plane WS2-MoS2 heterostructures. This work presents an efficient approach for addressing a variety of TMDC synthesis needs on a laboratory scale.
RESUMEN
To understand functional roles of constituent elements in ternary metal oxide photoanodes, essential photoelectrochemical (PEC) properties are systematically analyzed on a series of copper vanadate compounds with different Cu:V elemental ratios. Homogeneous and highly continuous thin films of ß-Cu2V2O7, γ-Cu3V2O8, Cu11V6O26, and Cu5V2O10 are grown via reactive co-sputtering and their performance characteristics for the light-driven oxygen evolution reaction are evaluated. All four compounds have similar bandgaps in the range of 1.83-2.03 eV, though Cu-rich phases exhibit stronger optical absorption and higher charge separation efficiencies. Transient photocurrent analysis reveals a reduction of surface catalytic activity with increasing Cu:V elemental ratio due to competitive charge recombination at Cu-related surface states. This comprehensive analysis of PEC functionalities-including photon absorption, carrier separation, and heterogeneous charge transfer-informs strategies for improving PEC activity in the copper vanadate materials system and provides insights that may aid discovery, design, and engineering of new photoelectrode materials.