Self-catalyzed epitaxial growth of vertical indium phosphide nanowires on silicon. | Nano Lett;9(6): 2223-8, 2009 Jun. | MEDLINE

Main content 1 Search 2 Footer 3

+A A -A High contrast

VHL Search Portal

Information and Knowledge for Health

Subject descriptor lookup Advanced Search

Self-catalyzed epitaxial growth of vertical indium phosphide nanowires on silicon.

Gao, Li; Woo, Robyn L; Liang, Baolai; Pozuelo, Marta; Prikhodko, Sergey; Jackson, Mike; Goel, Niti; Hudait, Mantu K; Huffaker, Diana L; Goorsky, Mark S; Kodambaka, Suneel; Hicks, Robert F.

Affiliation

Gao L; Department of Chemical and Biomolecular Engineering, University of California, Los Angeles, CA 90095, USA.

Nano Lett ; 9(6): 2223-8, 2009 Jun.

Article in En | MEDLINE | ID: mdl-19413340

Subject(s)

Indium/chemistry; Nanowires/chemistry; Phosphines/chemistry; Silicon/chemistry; Catalysis; Microscopy, Electron, Transmission; Nanowires/ultrastructure; X-Ray Diffraction

Search on Google

Full text: 1 Collection: 01-internacional Database: MEDLINE Main subject: Phosphines / Silicon / Nanowires / Indium Language: En Journal: Nano Lett Year: 2009 Type: Article Affiliation country: United States

Search on Google

Full text: 1 Collection: 01-internacional Database: MEDLINE Main subject: Phosphines / Silicon / Nanowires / Indium Language: En Journal: Nano Lett Year: 2009 Type: Article Affiliation country: United States