Band gap and electronic structure of an epitaxial, semiconducting Cr0.80Al0.20 thin film.
Phys Rev Lett
; 105(23): 236404, 2010 Dec 03.
Article
in En
| MEDLINE
| ID: mdl-21231489
ABSTRACT
Cr(1-x)Al(x) exhibits semiconducting behavior for x = 0.15-0.26. This Letter uses hard x-ray photoemission spectroscopy and density functional theory to further understand the semiconducting behavior. Photoemission measurements of an epitaxial Cr(0.80)Al(0.20) thin film show several features in the valence band region, including a gap at the Fermi energy (E(F)) for which the valence band edge is 95 ± 14 meV below E(F). Theory agrees well with the valence band measurements, and shows an incomplete gap at E(F) due to the hole band at M shifting almost below E(F).
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Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Phys Rev Lett
Year:
2010
Type:
Article
Affiliation country:
United States