Formation of hexagonal boron nitride by metal atomic vacancy-assisted B-N molecular diffusion.

Park, Seongjun; Lee, Jinyeong; Kim, Han Sol; Park, Jong-Bong; Lee, Kang Hyuck; Han, Sang A; Hwang, Sungwoo; Kim, Sang-Woo; Shin, Hyeon-Jin.

Affiliation

Park S; Nano electronics Laboratory and Platform Technology Laboratory, Samsung Advanced Institute of Technology , Suwon 443-801, Republic of Korea.

ACS Nano ; 9(1): 633-8, 2015 Jan 27.

Article in En | MEDLINE | ID: mdl-25485620

Key words

B−N molecular diffusion; growth mechanism; hexagonal boron nitride; interfacial growth

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Nano Year: 2015 Type: Article

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Nano Year: 2015 Type: Article