Photojunction field-effect transistor based on a colloidal quantum dot absorber channel layer. | ACS Nano;9(1): 356-62, 2015 Jan 27. | MEDLINE

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Photojunction field-effect transistor based on a colloidal quantum dot absorber channel layer.

Adinolfi, Valerio; Kramer, Illan J; Labelle, André J; Sutherland, Brandon R; Hoogland, S; Sargent, Edward H.

Affiliation

Adinolfi V; Department of Electrical Engineering and Computer Science, University of Toronto , 10 King's College Road, Toronto, Ontario M5S 3G4, Canada.

ACS Nano ; 9(1): 356-62, 2015 Jan 27.

Article in En | MEDLINE | ID: mdl-25558809

Key words

FET; JFET; colloidal quantum dots; photodetectors; phototransistors

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Full text: 1 Collection: 01-internacional Database: MEDLINE Type of study: Prognostic_studies Language: En Journal: ACS Nano Year: 2015 Type: Article Affiliation country: Canada

Search on Google

Full text: 1 Collection: 01-internacional Database: MEDLINE Type of study: Prognostic_studies Language: En Journal: ACS Nano Year: 2015 Type: Article Affiliation country: Canada