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Schottky barrier and contact resistance of InSb nanowire field-effect transistors.
Fan, Dingxun; Kang, N; Ghalamestani, Sepideh Gorji; Dick, Kimberly A; Xu, H Q.
Affiliation
  • Fan D; Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People's Republic of China.
Nanotechnology ; 27(27): 275204, 2016 Jul 08.
Article in En | MEDLINE | ID: mdl-27232588
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Full text: 1 Collection: 01-internacional Database: MEDLINE Type of study: Qualitative_research Language: En Journal: Nanotechnology Year: 2016 Type: Article
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Full text: 1 Collection: 01-internacional Database: MEDLINE Type of study: Qualitative_research Language: En Journal: Nanotechnology Year: 2016 Type: Article