Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction.
Sci Rep
; 6: 28459, 2016 06 28.
Article
in En
| MEDLINE
| ID: mdl-27350322
The built-in piezoelectric fields in group III-nitrides can act as road blocks on the way to maximizing the efficiency of opto-electronic devices. In order to overcome this limitation, a proper characterization of these fields is necessary. In this work nano-beam electron diffraction in scanning transmission electron microscopy mode has been used to simultaneously measure the strain state and the induced piezoelectric fields in a GaN/AlN multiple quantum well system.
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Sci Rep
Year:
2016
Type:
Article
Affiliation country:
Spain