Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates.

Puybaret, Renaud; Rogers, David J; Gmili, Youssef El; Sundaram, Suresh; Jordan, Matthew B; Li, Xin; Patriarche, Gilles; Teherani, Ferechteh H; Sandana, Eric V; Bove, Philippe; Voss, Paul L; McClintock, Ryan; Razeghi, Manijeh; Ferguson, Ian; Salvestrini, Jean-Paul; Ougazzaden, Abdallah

Puybaret, Renaud; Rogers, David J; Gmili, Youssef El; Sundaram, Suresh; Jordan, Matthew B; Li, Xin; Patriarche, Gilles; Teherani, Ferechteh H; Sandana, Eric V; Bove, Philippe; Voss, Paul L; McClintock, Ryan; Razeghi, Manijeh; Ferguson, Ian; Salvestrini, Jean-Paul; Ougazzaden, Abdallah.

Affiliation

Puybaret R; Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, GA 30332, United States of America. CNRS, GT UMI 2958, Georgia Tech Lorraine, 2 Rue Marconi, F-57070 Metz, France.

Nanotechnology ; 28(19): 195304, 2017 May 12.

Article in En | MEDLINE | ID: mdl-28358724

Fulltext

XML

PubMed Links

Search on Google

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanotechnology Year: 2017 Type: Article Affiliation country: France

Fulltext

XML

PubMed Links

Search on Google

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanotechnology Year: 2017 Type: Article Affiliation country: France