RRAM-based synapse devices for neuromorphic systems. | Faraday Discuss;213(0): 421-451, 2019 02 18. | MEDLINE

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RRAM-based synapse devices for neuromorphic systems.

Moon, K; Lim, S; Park, J; Sung, C; Oh, S; Woo, J; Lee, J; Hwang, H.

Affiliation

Moon K; Pohang University of Science and Technology (POSTECH), Korea. hwanghs@postech.ac.kr.

Faraday Discuss ; 213(0): 421-451, 2019 02 18.

Article in En | MEDLINE | ID: mdl-30426118

Subject(s)

Electronics/instrumentation; Neural Networks, Computer; Aluminum Oxide/chemistry; Computers; Copper/chemistry; Electric Conductivity; Equipment Design; Hafnium/chemistry; Oxides/chemistry; Semiconductors

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Full text: 1 Collection: 01-internacional Database: MEDLINE Main subject: Neural Networks, Computer / Electronics Type of study: Prognostic_studies Language: En Journal: Faraday Discuss Journal subject: QUIMICA Year: 2019 Type: Article

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Full text: 1 Collection: 01-internacional Database: MEDLINE Main subject: Neural Networks, Computer / Electronics Type of study: Prognostic_studies Language: En Journal: Faraday Discuss Journal subject: QUIMICA Year: 2019 Type: Article