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Synthesis of Cyclopentadithiophene-Diketopyrrolopyrrole Donor-Acceptor Copolymers for High-Performance Nonvolatile Floating-Gate Memory Transistors with Long Retention Time.
Jeon, Soyeon; Sun, Cheng; Yu, Seong Hoon; Kwon, Soon-Ki; Chung, Dae Sung; Jeong, Yong Jin; Kim, Yun-Hi.
Affiliation
  • Jeon S; Department of Energy Science and Engineering , Daegu Gyeongbuk Institute of Science and Technology (DGIST) , Daegu 42988 , Republic of Korea.
  • Sun C; Department of Chemistry and RIGET , Gyeongsang National University , Jinju 52828 , Republic of Korea.
  • Yu SH; Department of Energy Science and Engineering , Daegu Gyeongbuk Institute of Science and Technology (DGIST) , Daegu 42988 , Republic of Korea.
  • Kwon SK; Department of Materials Engineering and Convergence Technology and ERI , Gyeongsang National University , Jinju 660-701 , Republic of Korea.
  • Chung DS; Department of Energy Science and Engineering , Daegu Gyeongbuk Institute of Science and Technology (DGIST) , Daegu 42988 , Republic of Korea.
  • Jeong YJ; Department of Materials Science & Engineering , Korea National University of Transportation , Chungju 27469 , Republic of Korea.
  • Kim YH; Department of Chemistry and RIGET , Gyeongsang National University , Jinju 52828 , Republic of Korea.
ACS Appl Mater Interfaces ; 12(2): 2743-2752, 2020 Jan 15.
Article in En | MEDLINE | ID: mdl-31868340
ABSTRACT
Organic flash memories that employ solution-processed polymer semiconductors preferentially require internal stability of their active channel layers. In this paper, a series of new donor-acceptor copolymers based on cyclopentadithiophene (CDT) and diketopyrrolopyrrole (DPP) are synthesized to obtain high performance and operational stability of nonvolatile floating-gate memory transistors with various additional donor units including thiophene, thiophene-vinylene-thiophene (CDT-DPP-TVT), selenophene, and selenophene-vinylene-selenophene. Detailed analyses on the photophysical, two-dimensional grazing incident X-ray diffraction, and bias stress stability are discussed, which reveal that the CDT-DPP-TVT exhibits excellent bias stress stability over 105 s. To utilize the robust nature of CDT-DPP-TVT, floating-gate transistors are fabricated by embedding Au nanoparticles between Cytop layers as a charge storage site. The resulting memory devices reveal bistable current states with high on/off current ratio larger than 104 and each state can be distinguished for more than 1 year, indicating a long retention time. Moreover, repetitive writing-reading-erasing-reading test clearly supports the reproducible memory operation with reversible and reliable electrical responses. All these results suggest that the internal stability of CDT-DPP-TVT makes this copolymer a promising material for application in reliable organic flash memory.
Key words

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Appl Mater Interfaces Journal subject: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Year: 2020 Type: Article

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Appl Mater Interfaces Journal subject: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Year: 2020 Type: Article