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Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates.
Karrakchou, Soufiane; Sundaram, Suresh; Ayari, Taha; Mballo, Adama; Vuong, Phuong; Srivastava, Ashutosh; Gujrati, Rajat; Ahaitouf, Ali; Patriarche, Gilles; Leichlé, Thierry; Gautier, Simon; Moudakir, Tarik; Voss, Paul L; Salvestrini, Jean Paul; Ougazzaden, Abdallah.
Affiliation
  • Karrakchou S; Georgia Tech Lorraine, UMI 2958, Georgia Tech-CNRS, 2 rue Marconi, 57070, Metz, France.
  • Sundaram S; Georgia Institute of Technology (School of Electrical and Computer Engineering), UMI 2958, Georgia Tech-CNRS, Atlanta, GA, 30332-0250, USA.
  • Ayari T; Georgia Tech Lorraine, UMI 2958, Georgia Tech-CNRS, 2 rue Marconi, 57070, Metz, France.
  • Mballo A; Georgia Institute of Technology (School of Electrical and Computer Engineering), UMI 2958, Georgia Tech-CNRS, Atlanta, GA, 30332-0250, USA.
  • Vuong P; Georgia Tech Lorraine, UMI 2958, Georgia Tech-CNRS, 2 rue Marconi, 57070, Metz, France.
  • Srivastava A; Georgia Institute of Technology (School of Electrical and Computer Engineering), UMI 2958, Georgia Tech-CNRS, Atlanta, GA, 30332-0250, USA.
  • Gujrati R; CNRS, UMI 2958, Georgia Tech-CNRS, 2 rue Marconi, 57070, Metz, France.
  • Ahaitouf A; CNRS, UMI 2958, Georgia Tech-CNRS, 2 rue Marconi, 57070, Metz, France.
  • Patriarche G; Georgia Tech Lorraine, UMI 2958, Georgia Tech-CNRS, 2 rue Marconi, 57070, Metz, France.
  • Leichlé T; Georgia Institute of Technology (School of Electrical and Computer Engineering), UMI 2958, Georgia Tech-CNRS, Atlanta, GA, 30332-0250, USA.
  • Gautier S; Georgia Tech Lorraine, UMI 2958, Georgia Tech-CNRS, 2 rue Marconi, 57070, Metz, France.
  • Moudakir T; Georgia Institute of Technology (School of Electrical and Computer Engineering), UMI 2958, Georgia Tech-CNRS, Atlanta, GA, 30332-0250, USA.
  • Voss PL; Georgia Tech Lorraine, UMI 2958, Georgia Tech-CNRS, 2 rue Marconi, 57070, Metz, France.
  • Salvestrini JP; Centre de Nanosciences et de Nanotechnologies, Université Paris-Saclay, C2N-Site de Marcoussis, Route de Nozay, 91460, Marcoussis, France.
  • Ougazzaden A; CNRS, UMI 2958, Georgia Tech-CNRS, 2 rue Marconi, 57070, Metz, France.
Sci Rep ; 10(1): 21709, 2020 Dec 10.
Article in En | MEDLINE | ID: mdl-33303773
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Sci Rep Year: 2020 Type: Article Affiliation country: France
Fulltext
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PubMed Links
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Sci Rep Year: 2020 Type: Article Affiliation country: France