La3 Ga3 Ge2 S3 O10 : An Ultraviolet Nonlinear Optical Oxysulfide Designed by Anion-Directed Band Gap Engineering.

Chalcogenide-containing compounds have been widely studied as infrared nonlinear optical (NLO) materials. However, they have never been applied in the ultraviolet (UV) region owing to the high energy levels of chalcogen anions, leading to band gap narrowing. We report the synthesis of a new UV NLO oxysulfide La3 Ga3 Ge2 S3 O10 with an exceptionally wide band gap of 4.70 eV due to from the unique anion-ordered frameworks comprising 1D 1 ∞ [(Ga3/5 Ge2/5 )3 S3 O3 ] triangular tubes and 0D (Ga3/5 Ge2/5 )2 O7 dimers of corner-sharing (Ga/Ge)S2 O2 and (Ga/Ge)O4 tetrahedra, respectively. Second harmonic generation (SHG) measurements revealed that La3 Ga3 Ge2 S3 O10 was phase matchable with twice the SHG response of KH2 PO4 . The results of theoretical calculations suggest that the strong SHG response is mainly attributable to the S-3p and O-2p orbitals in the occupied states. The anion-directed band-gap engineering may give insights into the application of NLO oxychalcogenides in the UV regions.