The role of point defects related with carbon impurity on the kink of log<i>J</i>-<i>V</i>in GaN-on-Si epitaxial layers.

The role of point defects related with carbon impurity on the kink of logJ-Vin GaN-on-Si epitaxial layers.

Song, Chunyan; Liao, Hui; Yang, Ningxuan; Wang, Rui; Tang, Guanghui; Cao, Weicheng.

Affiliation

Song C; Department of Physics, College of Sciences, Shihezi University, Shihezi 832000, People's Republic of China.
Liao H; Department of Physics, College of Sciences, Shihezi University, Shihezi 832000, People's Republic of China.
Yang N; Department of Physics, College of Sciences, Shihezi University, Shihezi 832000, People's Republic of China.
Wang R; Department of Physics, College of Sciences, Shihezi University, Shihezi 832000, People's Republic of China.
Tang G; Department of Physics, College of Sciences, Shihezi University, Shihezi 832000, People's Republic of China.
Cao W; Department of Physics, College of Sciences, Shihezi University, Shihezi 832000, People's Republic of China.

Nanotechnology ; 33(49)2022 Sep 19.

Article in En | MEDLINE | ID: mdl-36044817