Increasing coverage of mono-layer graphene grown on hexagonal boron nitride.

Jiang, Chengxin; Chen, Lingxiu; Wang, Huishan; Chen, Chen; Wang, Xiujun; Kong, Ziqiang; Wang, Yibo; Wang, Haomin; Xie, Xiaoming

Jiang, Chengxin; Chen, Lingxiu; Wang, Huishan; Chen, Chen; Wang, Xiujun; Kong, Ziqiang; Wang, Yibo; Wang, Haomin; Xie, Xiaoming.

Affiliation

Jiang C; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China.
Chen L; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China.
Wang H; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China.
Chen C; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China.
Wang X; School of Materials Science and Physics, China University of Mining and Technology, Xuzhou 221116, People's Republic of China.
Kong Z; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China.
Wang Y; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China.
Wang H; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China.
Xie X; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China.