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High-temperature operation of gallium oxide memristors up to 600 K.
Sato, Kento; Hayashi, Yusuke; Masaoka, Naoki; Tohei, Tetsuya; Sakai, Akira.
Affiliation
  • Sato K; Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-Cho, Toyonaka, Osaka, 560-8531, Japan.
  • Hayashi Y; Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-Cho, Toyonaka, Osaka, 560-8531, Japan. hayashi@ee.es.osaka-u.ac.jp.
  • Masaoka N; Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-Cho, Toyonaka, Osaka, 560-8531, Japan.
  • Tohei T; Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-Cho, Toyonaka, Osaka, 560-8531, Japan.
  • Sakai A; Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-Cho, Toyonaka, Osaka, 560-8531, Japan. sakai@ee.es.osaka-u.ac.jp.
Sci Rep ; 13(1): 1261, 2023 Jan 30.
Article in En | MEDLINE | ID: mdl-36717634
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Sci Rep Year: 2023 Type: Article Affiliation country: Japan
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Sci Rep Year: 2023 Type: Article Affiliation country: Japan