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Two-Dimensional Octuple-Atomic-Layer M2Si2N4 (M = Al, Ga and In) with Long Carrier Lifetime.
Ding, Yimin; Xue, Kui; Zhang, Jing; Yan, Luo; Li, Qiaoqiao; Yao, Yisen; Zhou, Liujiang.
Affiliation
  • Ding Y; Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China.
  • Xue K; Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China.
  • Zhang J; School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China.
  • Yan L; Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China.
  • Li Q; School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China.
  • Yao Y; Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China.
  • Zhou L; School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China.
Micromachines (Basel) ; 14(2)2023 Feb 08.
Article in En | MEDLINE | ID: mdl-36838105
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Micromachines (Basel) Year: 2023 Type: Article Affiliation country: China
Fulltext
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PubMed Links
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Micromachines (Basel) Year: 2023 Type: Article Affiliation country: China