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Spin Quantum Dot Light-Emitting Diodes Enabled by 2D Chiral Perovskite with Spin-Dependent Carrier Transport.
Wang, Qingqian; Zhu, Hongmei; Tan, Yangzhi; Hao, Junjie; Ye, Taikang; Tang, Haodong; Wang, Zhaojin; Ma, Jingrui; Sun, Jiayun; Zhang, Tianqi; Zheng, Fankai; Zhang, Wenda; Choi, Hoi Wai; Choy, Wallace C H; Wu, Dan; Sun, Xiao Wei; Wang, Kai.
Affiliation
  • Wang Q; Institute of Nanoscience and Applications, Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
  • Zhu H; Institute of Physics, Henan Academy of Sciences, Zhengzhou, 450046, China.
  • Tan Y; Institute of Nanoscience and Applications, Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
  • Hao J; Institute of Nanoscience and Applications, Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
  • Ye T; Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, 999077, China.
  • Tang H; Institute of Nanoscience and Applications, Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
  • Wang Z; College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen, 518118, China.
  • Ma J; Institute of Nanoscience and Applications, Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
  • Sun J; Institute of Nanoscience and Applications, Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
  • Zhang T; College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen, 518118, China.
  • Zheng F; Institute of Nanoscience and Applications, Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
  • Zhang W; Institute of Nanoscience and Applications, Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
  • Choi HW; Institute of Nanoscience and Applications, Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
  • Choy WCH; Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, 999077, China.
  • Wu D; Institute of Nanoscience and Applications, Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
  • Sun XW; Institute of Nanoscience and Applications, Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
  • Wang K; Institute of Nanoscience and Applications, Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
Adv Mater ; 36(5): e2305604, 2024 Feb.
Article in En | MEDLINE | ID: mdl-37789724
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Adv Mater Journal subject: BIOFISICA / QUIMICA Year: 2024 Type: Article Affiliation country: China
Fulltext
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Adv Mater Journal subject: BIOFISICA / QUIMICA Year: 2024 Type: Article Affiliation country: China