Unintentional conductivity of indium nitride: transport modelling and microscopic origins.
J Phys Condens Matter
; 21(17): 174201, 2009 Apr 29.
Article
en En
| MEDLINE
| ID: mdl-21825405
ABSTRACT
A three-region model for the high n-type conductivity in InN, including contributions from the bulk, surface and buffer layer interface of the sample, is considered. In particular, a parallel conduction analysis is used to show that this model can account for the carrier concentration and mobility variation with film thickness that has previously been determined from single-field Hall effect measurements. Microscopic origins for the donors in each region are considered, and the overriding tendency towards n-type conductivity is discussed in terms of the bulk band structure of InN.
Texto completo:
1
Colección:
01-internacional
Banco de datos:
MEDLINE
Idioma:
En
Revista:
J Phys Condens Matter
Asunto de la revista:
BIOFISICA
Año:
2009
Tipo del documento:
Article
País de afiliación:
Reino Unido