Carbon nanotube field effect transistors with suspended graphene gates.
Nano Lett
; 11(9): 3569-75, 2011 Sep 14.
Article
en En
| MEDLINE
| ID: mdl-21848317
ABSTRACT
Novel field effect transistors with suspended graphene gates are demonstrated. By incorporating mechanical motion of the gate electrode, it is possible to improve the switching characteristics compared to a static gate, as shown by a combination of experimental measurements and numerical simulations. The mechanical motion of the graphene gate is confirmed by using atomic force microscopy to directly measure the electrostatic deflection. The device geometry investigated here can also provide a sensitive measurement technique for detecting high-frequency motion of suspended membranes as required, e.g., for mass sensing.
Texto completo:
1
Colección:
01-internacional
Banco de datos:
MEDLINE
Asunto principal:
Nanotecnología
/
Nanotubos de Carbono
/
Grafito
Idioma:
En
Revista:
Nano Lett
Año:
2011
Tipo del documento:
Article
País de afiliación:
Suecia