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Large linear magnetoresistance in heavily-doped Nb:SrTiO3 epitaxial thin films.
Jin, Hyunwoo; Lee, Keundong; Baek, Seung-Hyub; Kim, Jin-Sang; Cheong, Byung-Ki; Park, Bae Ho; Yoon, Sungwon; Suh, B J; Kim, Changyoung; Seo, S S A; Lee, Suyoun.
Afiliación
  • Jin H; Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 136-791, Korea.
  • Lee K; Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea.
  • Baek SH; Department of Physics and Astronomy, Institute of Applied Physics, Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-747, Korea.
  • Kim JS; Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 136-791, Korea.
  • Cheong BK; Department of Nanomaterials Science and Technology, University of Science and Technology, Daejeon, 305-333, Republic of Korea.
  • Park BH; Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 136-791, Korea.
  • Yoon S; Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 136-791, Korea.
  • Suh BJ; Department of Physics, Konkuk University, Seoul 143-701, Korea.
  • Kim C; Department of Physics, The Catholic University of Korea, Bucheon 420-743, Korea.
  • Seo SS; Department of Physics, The Catholic University of Korea, Bucheon 420-743, Korea.
  • Lee S; Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea.
Sci Rep ; 6: 34295, 2016 10 05.
Article en En | MEDLINE | ID: mdl-27703222
Interaction between electrons has long been a focused topic in condensed-matter physics since it has led to the discoveries of astonishing phenomena, for example, high-Tc superconductivity and colossal magnetoresistance (CMR) in strongly-correlated materials. In the study of strongly-correlated perovskite oxides, Nb-doped SrTiO3 (Nb:SrTiO3) has been a workhorse not only as a conducting substrate, but also as a host possessing high carrier mobility. In this work, we report the observations of large linear magnetoresistance (LMR) and the metal-to-insulator transition (MIT) induced by magnetic field in heavily-doped Nb:STO (SrNb0.2Ti0.8O3) epitaxial thin films. These phenomena are associated with the interplay between the large classical MR due to high carrier mobility and the electronic localization effect due to strong spin-orbit coupling, implying that heavily Nb-doped Sr(Nb0.2Ti0.8)O3 is promising for the application in spintronic devices.

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2016 Tipo del documento: Article

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2016 Tipo del documento: Article