Reliable resistive switching of epitaxial single crystalline cubic Y-HfO<sub>2</sub> RRAMs with Si as bottom electrodes.

Wang, Yankun; Niu, Gang; Wang, Qiang; Roy, Sourav; Dai, Liyan; Wu, Heping; Sun, Yanxiao; Song, Sannian; Song, Zhitang; Xie, Ya-Hong; Ye, Zuo-Guang; Meng, Xiangjian; Ren, Wei

Reliable resistive switching of epitaxial single crystalline cubic Y-HfO₂ RRAMs with Si as bottom electrodes.

Wang, Yankun; Niu, Gang; Wang, Qiang; Roy, Sourav; Dai, Liyan; Wu, Heping; Sun, Yanxiao; Song, Sannian; Song, Zhitang; Xie, Ya-Hong; Ye, Zuo-Guang; Meng, Xiangjian; Ren, Wei.

Afiliación

Wang Y; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, School of Electronic Science and Engineering, Xi'an, People's Republic of China.

Nanotechnology ; 31(20): 205203, 2020 May 15.

Article en En | MEDLINE | ID: mdl-32018237

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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Nanotechnology Año: 2020 Tipo del documento: Article

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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Nanotechnology Año: 2020 Tipo del documento: Article