Your browser doesn't support javascript.
loading
HPHT Synthesis: Effects of the Synergy of Pressure Regulation and Atom Filling on the Microstructure and Thermoelectric Properties of Yb x Ba8-x Ga16Ge30.
Sun, Bing; Li, Yingde; Cao, Lianzhen; Chen, Yongmi; Fan, Xinmin; Yang, Yang; Liu, Xia; Wang, Chunyan; Huang, Xiaodong; Wang, Xinle; Sun, Yongzhi; Zhao, Jiaqiang; Ma, Hongan.
Afiliación
  • Sun B; Department of Physics and Electronic Science, Weifang University, Weifang 261061, China.
  • Li Y; Department of Physics and Electronic Science, Weifang University, Weifang 261061, China.
  • Cao L; Department of Physics and Electronic Science, Weifang University, Weifang 261061, China.
  • Chen Y; Rushan Haiyuan Electronic Technology Company Ltd., Weihai 264500, China.
  • Fan X; Department of Physics and Electronic Science, Weifang University, Weifang 261061, China.
  • Yang Y; Department of Physics and Electronic Science, Weifang University, Weifang 261061, China.
  • Liu X; Department of Physics and Electronic Science, Weifang University, Weifang 261061, China.
  • Wang C; Department of Physics and Electronic Science, Weifang University, Weifang 261061, China.
  • Huang X; Department of Physics and Electronic Science, Weifang University, Weifang 261061, China.
  • Wang X; Department of Physics and Electronic Science, Weifang University, Weifang 261061, China.
  • Sun Y; Department of Physics and Electronic Science, Weifang University, Weifang 261061, China.
  • Zhao J; Department of Physics and Electronic Science, Weifang University, Weifang 261061, China.
  • Ma H; National Key Lab of Superhard Materials, Jilin University, Changchun 130012, China.
ACS Omega ; 5(19): 11202-11209, 2020 May 19.
Article en En | MEDLINE | ID: mdl-32455244
ABSTRACT
Type-I clathrate compounds Yb x Ba8-x Ga16Ge30 have been synthesized by the high-pressure and high-temperature (HPHT) method rapidly. The effects of the synergy of atom filling and pressure regulation on the microstructure and thermal and electrical properties have been investigated. With the content of Yb atom increasing, the carrier concentration is improved, the electrical resistivity and the absolute Seebeck coefficient are decreased, while the thermal conductivity is reduced significantly. A series of extremely low lattice thermal conductivities are achieved, attributed to the enhancement of multiscale phonon scattering for the "rattling" of the filled guest atoms, the heterogeneous distribution of nano- and microstructures, grain boundaries, abundant lattice distortions, lattice deformations, and dislocations. As a result, a maximum ZT of about 1.07 at 873 K has achieved for the Yb0.5Ba7.5Ga16Ge30 sample.

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: ACS Omega Año: 2020 Tipo del documento: Article País de afiliación: China

Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: ACS Omega Año: 2020 Tipo del documento: Article País de afiliación: China