Extended Charge Layers in Metal-Oxide-Semiconductor Nanocapacitors Revealed by Operando Electron Holography.
Phys Rev Lett
; 129(13): 137701, 2022 Sep 23.
Article
en En
| MEDLINE
| ID: mdl-36206432
ABSTRACT
The metal-oxide-semiconductor (MOS) capacitor is one of the fundamental electrical components used in integrated circuits. While much effort is currently being made to integrate new dielectric or ferroelectric materials, capacitors of silicon dioxide on silicon remain the most prevalent. It is perhaps surprising therefore that the electric field within such a capacitor has never been measured, or mapped out, at the nanoscale. Here we present results from operando electron holography experiments showing the electric potential across a working MOS nanocapacitor with unprecedented sensitivity and reveal unexpected charging of the dielectric material bordering the electrodes.
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1
Colección:
01-internacional
Banco de datos:
MEDLINE
Idioma:
En
Revista:
Phys Rev Lett
Año:
2022
Tipo del documento:
Article
País de afiliación:
Francia