Tunable Resistive Switching Behaviors and Mechanism of the W/ZnO/ITO Memory Cell.

Yu, Zhiqiang; Jia, Jinhao; Qu, Xinru; Wang, Qingcheng; Kang, Wenbo; Liu, Baosheng; Xiao, Qingquan; Gao, Tinghong; Xie, Quan

Yu, Zhiqiang; Jia, Jinhao; Qu, Xinru; Wang, Qingcheng; Kang, Wenbo; Liu, Baosheng; Xiao, Qingquan; Gao, Tinghong; Xie, Quan.

Afiliación

Yu Z; Faculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China.
Jia J; Institute of Advanced Optoelectronic Materials and Technology, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China.
Qu X; Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
Wang Q; Faculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China.
Kang W; Faculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China.
Liu B; Faculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China.
Xiao Q; Faculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China.
Gao T; Faculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou 545006, China.
Xie Q; Institute of Advanced Optoelectronic Materials and Technology, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China.

Molecules ; 28(14)2023 Jul 10.

Article en En | MEDLINE | ID: mdl-37513193

Palabras clave

ZnO nanofilms; multilevel; nonvolatile; oxygen vacancies; solgel

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Texto completo: 1 Colección: 01-internacional Banco de datos: MEDLINE Idioma: En Revista: Molecules Asunto de la revista: BIOLOGIA Año: 2023 Tipo del documento: Article País de afiliación: China

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