Colossal angular magnetoresistance in ferrimagnetic nodal-line semiconductors.

Efficient magnetic control of electronic conduction is at the heart of spintronic functionality for memory and logic applications1,2. Magnets with topological band crossings serve as a good material platform for such control, because their topological band degeneracy can be readily tuned by spin configurations, dramatically modulating electronic conduction3-10. Here we propose that the topological nodal-line degeneracy of spin-polarized bands in magnetic semiconductors induces an extremely large angular response of magnetotransport. Taking a layered ferrimagnet, Mn3Si2Te6, and its derived compounds as a model system, we show that the topological band degeneracy, driven by chiral molecular orbital states, is lifted depending on spin orientation, which leads to a metal-insulator transition in the same ferrimagnetic phase. The resulting variation of angular magnetoresistance with rotating magnetization exceeds a trillion per cent per radian, which we call colossal angular magnetoresistance. Our findings demonstrate that magnetic nodal-line semiconductors are a promising platform for realizing extremely sensitive spin- and orbital-dependent functionalities.

Quantum Hall effect based on Weyl orbits in Cd3As2.

Discovered decades ago, the quantum Hall effect remains one of the most studied phenomena in condensed matter physics and is relevant for research areas such as topological phases, strong electron correlations and quantum computing1-5. The quantized electron transport that is characteristic of the quantum Hall effect typically originates from chiral edge states-ballistic conducting channels that emerge when two-dimensional electron systems are subjected to large magnetic fields2. However, whether the quantum Hall effect can be extended to higher dimensions without simply stacking two-dimensional systems is unknown. Here we report evidence of a new type of quantum Hall effect, based on Weyl orbits in nanostructures of the three-dimensional topological semimetal Cd3As2. The Weyl orbits consist of Fermi arcs (open arc-like surface states) on opposite surfaces of the sample connected by one-dimensional chiral Landau levels along the magnetic field through the bulk6,7. This transport through the bulk results in an additional contribution (compared to stacked two-dimensional systems and which depends on the sample thickness) to the quantum phase of the Weyl orbit. Consequently, chiral states can emerge even in the bulk. To measure these quantum phase shifts and search for the associated chiral modes in the bulk, we conduct transport experiments using wedge-shaped Cd3As2 nanostructures with variable thickness. We find that the quantum Hall transport is strongly modulated by the sample thickness. The dependence of the Landau levels on the magnitude and direction of the magnetic field and on the sample thickness agrees with theoretical predictions based on the modified Lifshitz-Onsager relation for the Weyl orbits. Nanostructures of topological semimetals thus provide a way of exploring quantum Hall physics in three-dimensional materials with enhanced tunability.

Coercive Fields Exceeding 30 T in the Mixed-Valence Single-Molecule Magnet (CpiPr5)2Ho2I3.

Mixed-valence dilanthanide complexes of the type (CpiPr5)2Ln2I3 (CpiPr5 = pentaisopropylcyclopentadienyl; Ln = Gd, Tb, Dy) featuring a direct Ln-Ln σ-bonding interaction have been shown to exhibit well-isolated high-spin ground states and, in the case of the Tb and Dy variants, a strong axial magnetic anisotropy that gives rise to a large magnetic coercivity. Here, we report the synthesis and characterization of two new mixed-valence dilanthanide compounds in this series, (CpiPr5)2Ln2I3 (1-Ln; Ln = Ho, Er). Both compounds feature a Ln-Ln bonding interaction, the first such interaction in any molecular compounds of Ho or Er. Like the Tb and Dy congeners, both complexes exhibit high-spin ground states arising from strong spin-spin coupling between the lanthanide 4f electrons and a single σ-type lanthanide-lanthanide bonding electron. Beyond these similarities, however, the magnetic properties of the two compounds diverge. In particular, 1-Er does not exhibit observable magnetic blocking or slow magnetic relaxation, while 1-Ho exhibits magnetic blocking below 28 K, which is the highest temperature among Ho-based single-molecule magnets, and a spin reversal barrier of 556(4) cm-1. Additionally, variable-field magnetization data collected for 1-Ho reveal a coercive field of greater than 32 T below 8 K, more than 6-fold higher than observed for the bulk magnets SmCo5 and Nd2Fe14B, and the highest coercive field reported to date for any single-molecule magnet or molecule-based magnetic material. Multiconfigurational calculations, supported by far-infrared magnetospectroscopy data, reveal that the stark differences in magnetic properties of 1-Ho and 1-Er arise from differences in the local magnetic anisotropy of the lanthanide centers.

Interplay between Local Moment and Itinerant Magnetism in the Layered Metallic Antiferromagnet TaFe1.14Te3.

Two-dimensional antiferromagnets have garnered considerable interest for the next generation of functional spintronics. However, many bulk materials from which two-dimensional antiferromagnets are isolated are limited by their air sensitivity, low ordering temperatures, and insulating transport properties. TaFe1+yTe3 aims to address these challenges with increased air stability, metallic transport, and robust antiferromagnetism. Here, we synthesize TaFe1+yTe3 (y = 0.14), identify its structural, magnetic, and electronic properties, and elucidate the relationships between them. Axial-dependent high-field magnetization measurements on TaFe1.14Te3 reveal saturation magnetic fields ranging between 27 and 30 T with saturation magnetic moments of 2.05-2.12 µB. Magnetotransport measurements confirm that TaFe1.14Te3 is metallic with strong coupling between magnetic order and electronic transport. Angle-resolved photoemission spectroscopy measurements across the magnetic transition uncover a complex interplay between itinerant electrons and local magnetic moments that drives the magnetic transition. We demonstrate the ability to isolate few-layer sheets of TaFe1.14Te3, establishing TaFe1.14Te3 as a potential platform for two-dimensional spintronics.

Ground-State Spin Dynamics in d1 Kagome-Lattice Titanium Fluorides.

Many quantum magnetic materials suffer from structural imperfections. The effects of structural disorder on bulk properties are difficult to assess systematically from a chemical perspective due to the complexities of chemical synthesis. The recently reported S = 1/2 kagome lattice antiferromagnet, (CH3NH3)2NaTi3F12, 1-Ti, with highly symmetric kagome layers and disordered interlayer methylammonium cations, shows no magnetic ordering down to 0.1 K. To study the impact of structural disorder in the titanium fluoride kagome compounds, (CH3NH3)2KTi3F12, 2-Ti, was prepared. It presents no detectable structural disorder and only a small degree of distortion of the kagome lattice. The methylammonium disorder model of 1-Ti and order in 2-Ti were confirmed by atomic-resolution transmission electron microscopy. The antiferromagnetic interactions and band structures of both compounds were calculated based on spin-polarized density functional theory and support the magnetic structure analysis. Three spin-glass-like (SGL) transitions were observed in 2-Ti at 0.5, 1.4, and 2.3 K, while a single SGL transition can be observed in 1-Ti at 0.8 K. The absolute values of the Curie-Weiss temperatures of both 1-Ti (-139.5(7) K) and 2-Ti (-83.5(7) K) are larger than the SGL transition temperatures, which is indicative of geometrically frustrated spin glass (GFSG) states. All the SGL transitions are quenched with an applied field >0.1 T, which indicates novel magnetic phases emerge under small applied magnetic fields. The well-defined structure and the lack of structural disorder in 2-Ti suggest that 2-Ti is an ideal model compound for studying GFSG states and the potential transitions between spin liquid and GFSG states.

Magnetic Weyl Semimetallic Phase in Thin Films of Eu_{2}Ir_{2}O_{7}.

The interplay between electronic interactions and strong spin-orbit coupling is expected to create a plethora of fascinating correlated topological states of quantum matter. Of particular interest are magnetic Weyl semimetals originally proposed in the pyrochlore iridates, which are only expected to reveal their topological nature in thin film form. To date, however, direct experimental demonstrations of these exotic phases remain elusive, due to the lack of usable single crystals and the insufficient quality of available films. Here, we report on the discovery of signatures for the long-sought magnetic Weyl semimetallic phase in (111)-oriented Eu_{2}Ir_{2}O_{7} high-quality epitaxial thin films. We observed an intrinsic anomalous Hall effect with colossal coercivity but vanishing net magnetization, which emerges right below the onset of a peculiar magnetic phase with all-in-all-out (AIAO) antiferromagnetic ordering. The anomalous Hall conductivity obtained experimentally is consistent with the theoretical prediction, likely arising from the nonzero Berry curvature emanated by Weyl node pairs near the Fermi level that act as sources and sinks of Berry flux, activated by broken cubic crystal symmetry at the top and bottom terminations of the thin film.

Deconvoluting the Magnetic Structure of the Commensurately Modulated Quinary Zintl Phase Eu11-xSrxZn4Sn2As12.

The structure, magnetic properties, and 151Eu and 119Sn Mössbauer spectra of the solid-solution Eu11-xSrxZn4Sn2As12 are presented. A new commensurately modulated structure is described for Eu11Zn4Sn2As12 (R3m space group, average structure) that closely resembles the original structural description in the monoclinic C2/c space group with layers of Eu, puckered hexagonal Zn2As3 sheets, and Zn2As6 ethane-like isolated pillars. The solid-solution Eu11-xSrxZn4Sn2As12 (0 < x < 10) is found to crystallize in the commensurately modulated R3 space group, related to the parent phase but lacking the mirror symmetry. Eu11Zn4Sn2As12 orders with a saturation plateau at 1 T for 7 of the 11 Eu2+ cations ferromagnetically coupled (5 K) and shows colossal magnetoresistance at 15 K. The magnetic properties of Eu11Zn4Sn2As12 are investigated at higher fields, and the ferromagnetic saturation of all 11 Eu2+ cations occurs at ∼8 T. The temperature-dependent magnetic properties of the solid solution were investigated, and a nontrivial structure-magnetization correlation is revealed. The temperature-dependent 151Eu and 119Sn Mössbauer spectra confirm that the europium atoms in the structure are all Eu2+ and that the tin is consistent with an oxidation state of less than four in the intermetallic region. The spectral areas of both Eu(II) and Sn increase at the magnetic transition, indicating a magnetoelastic effect upon magnetic ordering.

Antiferroelectric Phase Transition in a Proton-Transfer Salt of Squaric Acid and 2,3-Dimethylpyrazine.

A proton-transfer reaction between squaric acid (H2sq) and 2,3-dimethylpyrazine (2,3-Me2pyz) results in crystallization of a new organic antiferroelectric (AFE), (2,3-Me2pyzH+)(Hsq-)·H2O (1), which possesses a layered structure. The structure of each layer can be described as partitioned into strips lined with methyl groups of the Me2pyzH+ cations and strips featuring extensive hydrogen bonding between the Hsq- anions and water molecules. Variable-temperature dielectric measurements and crystal structures determined through a combination of single-crystal X-ray and neutron diffraction reveal an AFE ordering at 104 K. The phase transition is driven by ordering of protons within the hydrogen-bonded strips. Considering the extent of proton transfer, the paraelectric (PE) state can be formulated as (2,3-Me2pyzH+)2(Hsq23-)(H5O2+), whereas the AFE phase can be described as (2,3-Me2pyzH+)(Hsq-)(H2O). The structural transition caused by the localization of protons results in the change in color from yellow in the PE state to colorless in the AFE state. The occurrence and mechanism of the AFE phase transition have been also confirmed by heat capacity measurements and variable-temperature infrared and Raman spectroscopy. This work demonstrates a potentially promising approach to the design of new electrically ordered materials by engineering molecule-based crystal structures in which hydrogen-bonding interactions are intentionally partitioned into quasi-one-dimensional regions.

The [U2(µ-S2)2Cl8](4-) anion: synthesis and characterization of the uranium double salt Cs5[U2(µ-S2)2Cl8]I.

Red plates of Cs5[U2(µ-S2)2Cl8]I were obtained in good yield from the reaction at 1173 K of U, GeI2 or SnI4, and S, with CsCl flux. The compound crystallizes in space group D2h25-Immm of the orthorhombic system in the Cs5[Nb2(µ-S2)2Cl8]Cl structure type. The centrosymmetric [U2(µ-S2)2Cl8]4­ anion in the structure has mmm symmetry with the two U4+ atoms separated by 3.747(1) Å. Each U atom is coordinated to four Cl atoms and four S atoms from two S22­ groups in a square-antiprismatic arrangement. The polarized absorbance spectra of Cs5[U2(µ-S2)2Cl8]I display prominent optical anisotropy. Magnetic measurements are consistent with the modified Curie­Weiss law at high temperatures. The low-temperature behavior may arise from antiferromagnetic coupling of the U4+ ions within the anion.

Synthesis, crystal structure, resistivity, magnetic, and theoretical study of ScUS3.

Single crystals of ScUS3 were synthesized in high yield in a single step at 1173 K. ScUS3 crystallizes in the FeUS3 structure type in the space group D2h(17)­Cmcm of the orthorhombic system with four formula units in a cell of dimensions a = 3.7500(8) Å, b = 12.110(2) Å, and c = 9.180(2) Å. Its structure consists of edge- and corner-sharing ScS6 octahedra that form two-dimensional layers. U atoms between layers are connected to eight S atoms in a bicapped trigonal-prismatic fashion. ScUS3 can be easily charge-balanced as Sc(3+)U(3+)(S(2­))3 as there are no S­S single bonds present in the crystal structure. High temperature-dependent resistivity measurements on a single crystal of ScUS3 show semiconducting behavior with an activation energy of 0.09(1) eV. A magnetic study on powdered single crystals of ScUS3 reveals an antiferromagnetic transition at 198 K followed by a ferromagnetic transition at 75 K. The weak ferromagnetic behavior at low temperature may originate from canted antiferromagnetic spins. A density functional theory (DFT) calculation predicts ScUS3 to be ferromagnetic and either a very poor metal or a semiconductor with a very small gap.

Electrical detection of spin-polarized surface states conduction in (Bi(0.53)Sb(0.47))2Te3 topological insulator.

Strong spin-orbit interaction and time-reversal symmetry in topological insulators enable the spin-momentum locking for the helical surface states. To date, however, there has been little report of direct electrical spin injection/detection in topological insulator. In this Letter, we report the electrical detection of spin-polarized surface states conduction using a Co/Al2O3 ferromagnetic tunneling contact in which the compound topological insulator (Bi0.53Sb0.47)2Te3 was used to achieve low bulk carrier density. Resistance (voltage) hysteresis with the amplitude up to about 10 Ω was observed when sweeping the magnetic field to change the relative orientation between the Co electrode magnetization and the spin polarization of surface states. The two resistance states were reversible by changing the electric current direction, affirming the spin-momentum locking in the topological surface states. Angle-dependent measurement was also performed to further confirm that the abrupt change in the voltage (resistance) was associated with the magnetization switching of the Co electrode. The spin voltage amplitude was quantitatively analyzed to yield an effective spin polarization of 1.02% for the surface states conduction in (Bi0.53Sb0.47)2Te3. Our results show a direct evidence of spin polarization in the topological surface states conduction. It might open up great opportunities to explore energy-efficient spintronic devices based on topological insulators.

Synthesis and characterization of two quaternary uranium tellurides, RbTiU3Te9 and CsTiU3Te9.

Black crystals of RbTiU3Te9 and CsTiU3Te9 have been synthesized at 1223 and 1173 K, respectively, by high-temperature solid-state routes. These compounds crystallize in a new structure type in space group C(2h)²-P21/m of the monoclinic system. The structure, which is similar to that of CsTiUTe5, consists of UTe2 layers connected into a three-dimensional framework by TiTe6 octahedra. The expanded UTe2 layers leave channels that are filled by Rb or Cs atoms. Single-crystal resistivity measurements on CsTiU3Te9 are consistent with semiconducting behavior; the calculated activation energy is 0.30(1) eV. X-ray photoelectron spectroscopic measurements on CsTiU3Te9 indicate that the compound contains U4⁺. From single-crystal magnetic measurements, CsTiU3Te9 is consistent with antiferromagnetic coupling between magnetic U atoms. The very low value of the effective magnetic moment of 0.56(2) µ(B) is believed to arise from a coexistence of magnetic and nonmagnetic U atoms.

Synthesis and characterization of eight compounds of the MU8Q17 family: ScU8S17, CoU8S17, NiU8S17, TiU8Se17, VU8Se17, CrU8Se17, CoU8Se17, and NiU8Se17.

The solid-state MU8Q17 compounds ScU8S17, CoU8S17, NiU8S17, TiU8Se17, VU8Se17, CrU8Se17, CoU8Se17, and NiU8Se17 were synthesized from the reactions of the elements at 1173 or 1123 K. These isostructural compounds crystallize in space group C2h3 - C2/m of the monoclinic system in the CrU8S17 structure type. X-ray absorption near-edge structure spectroscopic studies of ScU8S17 indicate that it contains Sc3+, and hence charge balance is achieved with a composition that includes U3+ as well as U4+. The other compounds charge balance with M2+ and U4+. Magnetic susceptibility measurements on ScU8S17 indicate antiferromagnetic couplings and a highly reduced effective magnetic moment. Ab Initio calculations find the compound to be metallic. Surprisingly, the Sc­S distances are actually longer than all the other M­S interactions, even though the ionic radii of Sc3+, low-spin Cr2+, and Ni2+ are similar.

Competing weak localization and weak antilocalization in ultrathin topological insulators.

We demonstrate evidence of a surface gap opening in topological insulator (TI) thin films of (Bi(0.57)Sb(0.43))(2)Te(3) below six quintuple layers through transport and scanning tunneling spectroscopy measurements. By effective tuning the Fermi level via gate-voltage control, we unveil a striking competition between weak localization and weak antilocalization at low magnetic fields in nonmagnetic ultrathin films, possibly owing to the change of the net Berry phase. Furthermore, when the Fermi level is swept into the surface gap of ultrathin samples, the overall unitary behaviors are revealed at higher magnetic fields, which are in contrast to the pure WAL signals obtained in thicker films. Our findings show an exotic phenomenon characterizing the gapped TI surface states and point to the future realization of quantum spin Hall effect and dissipationless TI-based applications.

Engineering Anomalously Large Electron Transport in Topological Semimetals.

Anomalous transport of topological semimetals has generated significant interest for applications in optoelectronics, nanoscale devices, and interconnects. Understanding the origin of novel transport is crucial to engineering the desired material properties, yet their orders of magnitude higher transport than single-particle mobilities remain unexplained. This work demonstrates the dramatic mobility enhancements result from phonons primarily returning momentum to electrons due to phonon-electron dominating over phonon-phonon scattering. Proving this idea, proposed by Peierls in 1932, requires tuning electron and phonon dispersions without changing symmetry, topology, or disorder. This is achieved by combining de Haas - van Alphen (dHvA), electron transport, Raman scattering, and first-principles calculations in the topological semimetals MX2 (M = Nb, Ta and X = Ge, Si). Replacing Ge with Si brings the transport mobilities from an order magnitude larger than single particle ones to nearly balanced. This occurs without changing the crystal structure or topology and with small differences in disorder or Fermi surface. Simultaneously, Raman scattering and first-principles calculations establish phonon-electron dominated scattering only in the MGe2 compounds. Thus, this study proves that phonon-drag is crucial to the transport properties of topological semimetals and provides insight to engineer these materials further.

Coexistence of Merons with Skyrmions in the Centrosymmetric Van Der Waals Ferromagnet Fe5- x GeTe2.

Fe5- x GeTe2 is a centrosymmetric, layered van der Waals (vdW) ferromagnet that displays Curie temperatures Tc (270-330 K) that are within the useful range for spintronic applications. However, little is known about the interplay between its topological spin textures (e.g., merons, skyrmions) with technologically relevant transport properties such as the topological Hall effect (THE) or topological thermal transport. Here, via high-resolution Lorentz transmission electron microscopy, it is shown that merons and anti-meron pairs coexist with Néel skyrmions in Fe5- x GeTe2 over a wide range of temperatures and probe their effects on thermal and electrical transport. A THE is detected, even at room T, that senses merons at higher T's, as well as their coexistence with skyrmions as T is lowered, indicating an on-demand thermally driven formation of either type of spin texture. Remarkably, an unconventional THE is also observed in absence of Lorentz force, and it is attributed to the interaction between charge carriers and magnetic field-induced chiral spin textures. These results expose Fe5-x GeTe2 as a promising candidate for the development of applications in skyrmionics/meronics due to the interplay between distinct but coexisting topological magnetic textures and unconventional transport of charge/heat carriers.

Anomalous magnetoresistance by breaking ice rule in Bi2Ir2O7/Dy2Ti2O7 heterostructure.

While geometrically frustrated quantum magnets host rich exotic spin states with potentials for revolutionary quantum technologies, most of them are necessarily good insulators which are difficult to be integrated with modern electrical circuit. The grand challenge is to electrically detect the emergent fluctuations and excitations by introducing charge carriers that interact with the localized spins without destroying their collective spin states. Here, we show that, by designing a Bi2Ir2O7/Dy2Ti2O7 heterostructure, the breaking of the spin-ice rule in insulating Dy2Ti2O7 leads to a charge response in the conducting Bi2Ir2O7 measured as anomalous magnetoresistance during the field-induced Kagome ice-to-saturated ice transition. The magnetoresistive anomaly also captures the characteristic angular and temperature dependence of this ice-rule-breaking transition, which has been understood as magnetic monopole condensation. These results demonstrate a novel heteroepitaxial approach for electronically probing the transition between exotic insulating spin states, laying out a blueprint for the metallization of frustrated quantum magnets.

Syntheses and characterization of nine quaternary uranium chalcogenides among the compounds A2M3UQ6 (A = K, Rb, Cs; M = Pd, Pt; Q = S, Se).

Nine compounds from the series A(2)M(3)UQ(6) (A = K or Rb or Cs; M = Pd or Pt; Q = S or Se) were synthesized by reacting U, M, and Q in ACl or A(2)Q(x) fluxes. These compounds crystallize with eight formula units in the NaBa(2)Cu(3)O(6) structure type, in space group Fmmm of the orthorhombic system. The structure contains hexagons formed from six edge-sharing square-planar coordinated M atoms, which in turn edge-share with trigonal-prismatically coordinated U atoms, forming layers along (010). These layers are separated by A atoms. Electrical resistivity measurements along the [100] direction of Rb(2)Pd(3)US(6) show typical semiconductor behavior. Magnetic susceptibility measurements on Rb(2)Pd(3)US(6) display marked magnetic anisotropy and unusually low magnetic moments owing to crystalline electric field effects.

Synthesis, structure, magnetism, and optical properties of Cs2Cu3DyTe4.

CsCu(3)DyTe(4) was prepared by reacting copper, dysprosium, and tellurium with cesium azide at 850 °C in a fused silica ampule. This new telluride crystallizes in the monoclinic space group C2/m with lattice dimensions of a = 16.462(4) Å, b = 4.434(1) Å, c = 8. 881(2) Å, ß = 108.609(12)° with Z = 2. Its crystal structure is dominated by (∞)(2){[Cu(3)DyTe(4)]}(1-) anionic layers separated by Cs(+) cations. The copper cations are disordered over three different tetrahedral sites. The [DyTe(6)](9-) polyhedra form infinite (∞)(1){[DyTe(4)](5-)} chains. Magnetism studies conducted on this semiconductor suggest complex magnetic interactions between the Dy(3+) cations with a strong deviation from Curie-type behavior at low temperatures below 40 K.

Syntheses and characterization of six quaternary uranium chalcogenides A2M4U6Q17 (A = Rb or Cs; M = Pd or Pt; Q = S or Se).

The A(2)M(4)U(6)Q(17) compounds Rb(2)Pd(4)U(6)S(17), Rb(2)Pd(4)U(6)Se(17), Rb(2)Pt(4)U(6)Se(17), Cs(2)Pd(4)U(6)S(17), Cs(2)Pd(4)U(6)Se(17), and Cs(2)Pt(4)U(6)Se(17) were synthesized by the high-temperature solid-state reactions of U, M, and Q in a flux of ACl or Rb(2)S(3). These isostructural compounds crystallize in a new structure type, with two formula units in the tetragonal space group P4/mnc. This structure consists of a network of square-planar MQ(4), monocapped trigonal-prismatic UQ(7), and square-antiprismatic UQ(8) polyhedra with A atoms in the voids. Rb(2)Pd(4)U(6)S(17) is a typical semiconductor, as deduced from electrical resistivity measurements. Magnetic susceptibility and specific heat measurements on single crystals of Rb(2)Pd(4)U(6)S(17) show a phase transition at 13 K, the result either of antiferromagnetic ordering or of a structural phase transition. Periodic spin-polarized band structure calculations were performed on Rb(2)Pd(4)U(6)S(17) with the use of the first principles DFT program VASP. Magnetic calculations included spin-orbit coupling. With U f-f correlations taken into account within the GGA+U formalism in calculating partial densities of states, the compound is predicted to be a narrow-band semiconductor with the smallest indirect and direct band gaps being 0.79 and 0.91 eV, respectively.