Near-infrared modulation by means of GeTe/SOI-based metamaterial.

Today, nanophotonics still lacks components for modulation that can be easily implementable in existing silicon-on-insulator (SOI) technology. Chalcogenide phase change materials (PCMs) are promising candidates for tuning in the near infrared: at the nanoscale, thin layers can provide enough contrast to control the optical response of a nanostructure. Moreover, all-dielectric metamaterials allow for resonant behavior without having ohmic losses in the telecom range. Here, a novel hybridization of a SOI-based metamaterial with PCM GeTe is experimentally investigated. A metamaterial based on Si nanorods, covered by a thin layer of GeTe, is designed and fabricated. Switching GeTe from amorphous to crystalline leads to a rather high resonance-governed reflection contrast at 1.55 µm. Additional confocal Raman imaging is done to differentiate the crystallized zones of the metamaterials' unit cell. The findings are in good agreement with numerical analysis and show good perspectives of all-dielectric tunable near-infrared nanophotonics.

Simple technique for integrating compact silicon devices within optical fibers.

In this work, we present a simple fabrication process enabling the integration of a subwavelength amorphous silicon layer inside optical fibers by means of the arc discharge technique. To assess our method, we have fabricated a compact in-line Fabry-Perot interferometer consisting of a thin (<1 µm) a-Si:H layer completely embedded within a standard single-mode optical fiber. The device exhibits low loss (1.3 dB) and high interference fringe visibility (~80%) both in reflection and transmission, due to the high refractive index contrast between silica and a-Si:H. A high linear temperature sensitivity up to 106 pm/°C is demonstrated in the range 120°C-400°C. The proposed interferometer is attractive for point monitoring applications as well as for ultrahigh-temperature sensing in harsh environments.