Angstrom-Size Defect Creation and Ionic Transport through Pores in Single-Layer MoS2.

Atomic-defect engineering in thin membranes provides opportunities for ionic and molecular filtration and analysis. While molecular-dynamics (MD) calculations have been used to model conductance through atomic vacancies, corresponding experiments are lacking. We create sub-nanometer vacancies in suspended single-layer molybdenum disulfide (MoS2) via Ga+ ion irradiation, producing membranes containing ∼300 to 1200 pores with average and maximum diameters of ∼0.5 and ∼1 nm, respectively. Vacancies exhibit missing Mo and S atoms, as shown by aberration-corrected scanning transmission electron microscopy (AC-STEM). The longitudinal acoustic band and defect-related photoluminescence were observed in Raman and photoluminescence spectroscopy, respectively. As the irradiation dose is increased, the median vacancy area remains roughly constant, while the number of vacancies (pores) increases. Ionic current versus voltage is nonlinear and conductance is comparable to that of ∼1 nm diameter single MoS2 pores, proving that the smaller pores in the distribution display negligible conductance. Consistently, MD simulations show that pores with diameters <0.6 nm are almost impermeable to ionic flow. Atomic pore structure and geometry, studied by AC-STEM, are critical in the sub-nanometer regime in which the pores are not circular and the diameter is not well-defined. This study lays the foundation for future experiments to probe transport in large distributions of angstrom-size pores.

Anisotropic Electron-Photon and Electron-Phonon Interactions in Black Phosphorus.

Orthorhombic black phosphorus (BP) and other layered materials, such as gallium telluride (GaTe) and tin selenide (SnSe), stand out among two-dimensional (2D) materials owing to their anisotropic in-plane structure. This anisotropy adds a new dimension to the properties of 2D materials and stimulates the development of angle-resolved photonics and electronics. However, understanding the effect of anisotropy has remained unsatisfactory to date, as shown by a number of inconsistencies in the recent literature. We use angle-resolved absorption and Raman spectroscopies to investigate the role of anisotropy on the electron-photon and electron-phonon interactions in BP. We highlight, both experimentally and theoretically, a nontrivial dependence between anisotropy and flake thickness and photon and phonon energies. We show that once understood, the anisotropic optical absorption appears to be a reliable and simple way to identify the crystalline orientation of BP, which cannot be determined from Raman spectroscopy without the explicit consideration of excitation wavelength and flake thickness, as commonly used previously.

Enhanced LiMn2O4 Thin-Film Electrode Stability in Ionic Liquid Electrolyte: A Pathway to Suppress Mn Dissolution.

Spinel-type lithium manganese oxide (LiMn2O4) cathodes suffer from severe manganese dissolution in the electrolyte, compromising the cyclic stability of LMO-based Li-ion batteries (LIBs). In addition to causing structural and morphological deterioration to the cathode, dissolved Mn ions can migrate through the electrolyte to deposit on the anode, accelerating capacity fade. Here, we examine single-crystal epitaxial LiMn2O4 (111) thin-films using synchrotron in situ X-ray diffraction and reflectivity to study the structural and interfacial evolution during cycling. Cyclic voltammetry is performed in a wide range (2.5-4.3 V vs Li/Li+) to promote Mn3+ formation, which enhances dissolution, for two different electrolyte systems: an imidazolium ionic liquid containing lithium bis-(trifluoromethylsulfonyl)imide (LiTFSI) and a conventional carbonate liquid electrolyte containing lithium hexafluorophosphate (LiPF6). We find exceptional stability in this voltage range for the ionic liquid electrolyte compared to the conventional electrolyte, which is attributed to the absence of Mn dissolution in the ionic liquid. X-ray reflectivity shows a negligible loss of cathode material for the films cycled in the ionic liquid electrolyte, further confirmed by inductively coupled plasma mass spectrometry and transmission electron microscopy. Conversely, a substantial loss of Mn is found when the film is cycled in the conventional electrolyte. These findings show the significant advantages of ionic liquids in suppressing Mn dissolution in LiMn2O4 LIB cathodes.

Spatial defects nanoengineering for bipolar conductivity in MoS2.

Understanding the atomistic origin of defects in two-dimensional transition metal dichalcogenides, their impact on the electronic properties, and how to control them is critical for future electronics and optoelectronics. Here, we demonstrate the integration of thermochemical scanning probe lithography (tc-SPL) with a flow-through reactive gas cell to achieve nanoscale control of defects in monolayer MoS2. The tc-SPL produced defects can present either p- or n-type doping on demand, depending on the used gasses, allowing the realization of field effect transistors, and p-n junctions with precise sub-µm spatial control, and a rectification ratio of over 104. Doping and defects formation are elucidated by means of X-Ray photoelectron spectroscopy, scanning transmission electron microscopy, and density functional theory. We find that p-type doping in HCl/H2O atmosphere is related to the rearrangement of sulfur atoms, and the formation of protruding covalent S-S bonds on the surface. Alternatively, local heating MoS2 in N2 produces n-character.

Raman Shifts in Electron-Irradiated Monolayer MoS2.

We report how the presence of electron-beam-induced sulfur vacancies affects first-order Raman modes and correlate the effects with the evolution of the in situ transmission-electron microscopy two-terminal conductivity of monolayer MoS2 under electron irradiation. We observe a red-shift in the E' Raman peak and a less pronounced blue-shift in the A'1 peak with increasing electron dose. Using energy-dispersive X-ray spectroscopy and selected-area electron diffraction, we show that irradiation causes partial removal of sulfur and correlate the dependence of the Raman peak shifts with S vacancy density (a few %). This allows us to quantitatively correlate the frequency shifts with vacancy concentration, as rationalized by first-principles density functional theory calculations. In situ device current measurements show an exponential decrease in channel current upon irradiation. Our analysis demonstrates that the observed frequency shifts are intrinsic properties of the defective systems and that Raman spectroscopy can be used as a quantitative diagnostic tool to characterize MoS2-based transport channels.