Eu Doping in the GdCd7.88 Quasicrystal and Its Approximant Crystal GdCd6.

The effect of Eu doping in the Tsai quasicrystal (QC) GdCd7.88 and its periodic 1/1 approximant crystal (AC) GdCd6 are investigated. This represents the first synthesis of Eu-containing stable QC samples, where three samples with the final composition Gd1-xEuxCd7.6±α at Eu doping concentrations x = 0.06, 0.13, and 0.19 are obtained (α ∼ 0.2). They are compared to two 1/1 ACs with compositions Gd1-xEuxCd6 (x = 0.12, 0.16). In addition, a new type of 1/1 AC, differing only by the inclusion of extra Cd sites unique to the Eu4Cd25 1/1 AC, has been discovered and synthesized for the concentrations Gd1-xEuxCd6+δ (x = 0.25, 0.33, 0.45, 0.69, 0.73, and 0 < δ ≤ 0.085). Due to the preferred cube morphology of its single grains, we refer to them as c-type 1/1 ACs and to the conventional standard ones as s-type. In both QCs and s-type ACs, the Eu content appears to saturate at a concentration of ∼20%. On the other hand, any Gd| Eu ratio is allowed in the c-type ACs, varying continuously between GdCd6 and Eu4Cd25. We describe and contrast the changes in composition, atomic structure, specific heat, and magnetic properties induced by Eu doping in the quasicrystalline phase and the s-type and c-type 1/1 ACs. By comparing our results to the literature data, we propose that the occupancy of the extra Cd sites can be used to predict the stability of Tsai-type quasicrystalline phases.

Structural Analysis of the Gd-Au-Al 1/1 Quasicrystal Approximant Phase across Its Composition-Driven Magnetic Property Changes.

Gd14AuxAl86-x Tsai-type 1/1 quasicrystal approximants (ACs) exhibit three magnetic orders that can be finely tuned by the valence electron concentration (e/a ratio). This parameter has been considered to be crucial for controlling the long-range magnetic order in quasicrystals (QCs) and ACs. However, the nonlinear trend of the lattice parameter as a function of Au concentration suggests that Gd14AuxAl86-x 1/1 ACs are not following a conventional solid solution behavior. We investigated Gd14AuxAl86-x samples with x values of 52, 53, 56, 61, 66, and 73 by single-crystal X-ray diffraction. Our analysis reveals that increasing Au/Al ordering with increasing x leads to distortions in the icosahedral shell built of the Gd atoms and that trends observed in the interatomic Gd-Gd distances closely correlate with the magnetic property changes across different x values. Our results demonstrate that the e/a ratio alone may be an oversimplified concept for investigating the long-range magnetic order in 1/1 ACs and QCs and that the mixing behavior of the nonmagnetic elements Au and Al plays a significant role in influencing the magnetic behavior of the Gd14AuxAl86-x 1/1 AC system. These findings will contribute to improved understanding towards tailoring magnetic properties in emerging materials.

Atomic-Scale Tuning of Tsai-Type Clusters in RE-Au-Si Systems (RE = Gd, Tb, Ho).

Tsai-type quasicrystals and approximants are distinguished by a cluster unit made up of four concentric polyhedral shells that surround a tetrahedron at the center. Here we show that for Tsai-type 1/1 approximants in the RE-Au-Si systems (RE = Gd, Tb, Ho) the central tetrahedron of the Tsai clusters can be systematically replaced by a single RE atom. The modified cluster is herein termed a "pseudo-Tsai cluster" and represents, in contrast to the conventional Tsai cluster, a structural motif without internal symmetry breaking. For each system, single-phase samples of both pseudo-Tsai and Tsai-type 1/1 approximants were independently prepared as millimeter-sized, faceted, single crystals using the self-flux synthesis method. The full replacement of tetrahedral moieties by RE atoms in the pseudo-Tsai 1/1 approximants was ascertained by a combination of single-crystal and powder diffraction studies, as well as energy dispersive X-ray spectroscopy (EDX) analyses with a scanning electron microscope (SEM). Differential scanning calorimetry (DSC) studies revealed distinctly higher decomposition temperatures, by 5-35 K, for the pseudo-Tsai phases. Furthermore, the magnetic properties of pseudo-Tsai phases are profoundly and consistently different from the Tsai counterparts. The onset temperatures of magnetic ordering (Tmag) are lowered in the pseudo-Tsai phases by ∼30% from 24 to 17 K, 11.5 to 8 K, and 5 to 3.5 K in the Gd-Au-Si, Tb-Au-Si, and Ho-Au-Si systems, respectively. In addition, the Tb-Au-Si and Ho-Au-Si systems exhibit some qualitative changes in their magnetic ordering, indicating decisive changes in the magnetic state/structure by a moment-bearing atom at the cluster center.

Two-Dimensional Flexible High Diffusive Spin Circuits.

Owing to their unprecedented electronic properties, graphene and two-dimensional (2D) crystals have brought fresh opportunities for advances in planar spintronic devices. Graphene is an ideal medium for spin transport while being an exceptionally resilient material for flexible nanoelectronics. However, these extraordinary traits have never been combined to create flexible graphene spin circuits. Realizing such circuits could lead to bendable strain-spin sensors, as well as a unique platform to explore pure spin current based operations and low-power 2D flexible nanoelectronics. Here, we demonstrate graphene spin circuits on flexible substrates for the first time. Despite the rough topography of the flexible substrates, these circuits prepared with chemical vapor deposited monolayer graphene reveal an efficient room temperature spin transport with distinctively large spin diffusion coefficients ∼0.2 m2 s-1. Compared to earlier graphene devices on Si/SiO2 substrates, such values are up to 20 times larger, leading to one order higher spin signals and an enhanced spin diffusion length ∼10 µm in graphene-based nonlocal spin valves fabricated using industry standard systems. This high performance arising out of a characteristic substrate terrain shows promise of a scalable and flexible platform towards flexible 2D spintronics. Our innovation is a key step for the exploration of strain-dependent 2D spin phenomena and paves the way for flexible graphene spin memory-logic units and planar spin sensors.