Liquid metal for high-entropy alloy nanoparticles synthesis.

High-entropy alloy nanoparticles (HEA-NPs) show great potential as functional materials1-3. However, thus far, the realized high-entropy alloys have been restricted to palettes of similar elements, which greatly hinders the material design, property optimization and mechanistic exploration for different applications4,5. Herein, we discovered that liquid metal endowing negative mixing enthalpy with other elements could provide a stable thermodynamic condition and act as a desirable dynamic mixing reservoir, thus realizing the synthesis of HEA-NPs with a diverse range of metal elements in mild reaction conditions. The involved elements have a wide range of atomic radii (1.24-1.97 Å) and melting points (303-3,683 K). We also realized the precisely fabricated structures of nanoparticles via mixing enthalpy tuning. Moreover, the real-time conversion process (that is, from liquid metal to crystalline HEA-NPs) is captured in situ, which confirmed a dynamic fission-fusion behaviour during the alloying process.

Synthesis of Ultrathin High-Entropy Oxides with Phase Controllability.

High-entropy oxides (HEOs) with an ultrathin geometric structure are especially expected to exhibit extraordinary performance in different fields. The phase structure is deemed as a key factor in determining the properties of HEOs, rendering their phase control synthesis tempting. However, the disparity in intrinsic phase structures and physicochemical properties of multiple components makes it challenging to form single-phase HEOs with the target phase. Herein, we proposed a self-lattice framework-guided strategy to realize the synthesis of ultrathin HEOs with desired phase structures, including rock-salt, spinel, perovskite, and fluorite phases. The participation of the Ga assistor was conducive to the formation of the high-entropy mixing state by decreasing the formation energy. The as-prepared ultrathin spinel HEOs were demonstrated to be an excellent catalyst with high activity and stability for the oxygen evolution reaction in water electrolysis. Our work injects new vitality into the synthesis of HEOs for advanced applications and undoubtedly expedites their phase engineering.

Enhanced Electrochemical CO2 Reduction to Formate over Phosphate-Modified In: Water Activation and Active Site Tuning.

Electrochemical CO2 reduction reaction (CO2RR) offers a sustainable strategy for producing fuels and chemicals. However, it suffers from sluggish CO2 activation and slow water dissociation. In this work, we construct a (P-O)δ- modified In catalyst that exhibits high activity and selectivity in electrochemical CO2 reduction to formate. A combination of in situ characterizations and kinetic analyses indicate that (P-O)δ- has a strong interaction with K+(H2O)n, which effectively accelerates water dissociation to provide protons. In situ attenuated total reflectance surface-enhanced infrared absorption spectroscopy (ATR-SEIRAS) measurements together with density functional theory (DFT) calculations disclose that (P-O)δ- modification leads to a higher valence state of In active site, thus promoting CO2 activation and HCOO* formation, while inhibiting competitive hydrogen evolution reaction (HER). As a result, the (P-O)δ- modified oxide-derived In catalyst exhibits excellent formate selectivity across a broad potential window with a formate Faradaic efficiency as high as 92.1 % at a partial current density of ~200 mA cm-2 and a cathodic potential of -1.2 V vs. RHE in an alkaline electrolyte.

A Feasible Strategy for Identifying Single-Atom Catalysts Toward Electrochemical NO-to-NH3 Conversion.

Combining NO removal and NH3 synthesis, electrochemical NO reduction reaction (NORR) toward NH3 is considered as a novel and attractive approach. However, exploring suitable catalysts for NO-to-NH3 conversion is still a formidable task due to the lack of a feasible method. Herein, utilizing systematic first-principles calculations, a rational strategy for screening efficient single-atom catalysts (SACs) for NO-to-NH3 conversion is reported. This strategy runs the gamut of stability, NO adsorbability, NORR activity, and NH3 selectivity. Taking transition metal atom embedded in C2 N (TM-C2 N) as an example, its validity is demonstrated and Zr-C2 N is selected as a stable NO-adsorbable NORR catalyst with high NH3 selectivity. Therefore, this work has established a theoretical landscape for screening SACs toward NO-to-NH3 conversion, which will contribute to the application of SACs for NORR and other electrochemical reactions.

Iron Selenide Microcapsules as Universal Conversion-Typed Anodes for Alkali Metal-Ion Batteries.

Rechargeable alkali metal-ion batteries (AMIBs) are receiving significant attention owing to their high energy density and low weight. The performance of AMIBs is highly dependent on the electrode materials. It is, therefore, quite crucial to explore suitable electrode materials that can fulfil the future requirements of AMIBs. Herein, a hierarchical hybrid yolk-shell structure of carbon-coated iron selenide microcapsules (FeSe2 @C-3 MCs) is prepared via facile hydrothermal reaction, carbon-coating, HCl solution etching, and then selenization treatment. When used as the conversion-typed anode materials (CTAMs) for AMIBs, the yolk-shell FeSe2 @C-3 MCs show advantages. First, the interconnected external carbon shell improves the mechanical strength of electrodes and accelerates ionic migration and electron transmission. Second, the internal electroactive FeSe2 nanoparticles effectively decrease the extent of volume expansion and avoid pulverization when compared with micro-sized solid FeSe2 . Third, the yolk-shell structure provides sufficient inner void to ensure electrolyte infiltration and mobilize the surface and near-surface reactions of electroactive FeSe2 with alkali metal ions. Consequently, the designed yolk-shell FeSe2 @C-3 MCs demonstrate enhanced electrochemical performance in lithium-ion batteries, sodium-ion batteries, and potassium-ion batteries with high specific capacities, long cyclic stability, and outstanding rate capability, presenting potential application as universal anodes for AMIBs.

An all two-dimensional vertical heterostructure graphene/CuInP2S6/MoS2for negative capacitance field effect transistor.

As scaling down the size of metal oxide semiconductor field-effect transistors (FETs), power dissipation has become a major challenge. Lowering down the sub-threshold swing (SS) is known as an effective technique to decrease the operating voltage of FETs and hence lower down the power consumption. However, the Boltzmann distribution of electrons (so-called 'Boltzmann tyranny') implements a physical limit to the SS value. Use of negative capacitance (NC) effect has enabled a new path to achieve a low SS below the Boltzmann limit (60 mV dec-1at room temperature). In this work, we have demonstrated a NC-FET from an all two-dimensional (2D) metal ferroelectric semiconductor (MFS) vertical heterostructure: Graphene/CuInP2S6/MoS2. The negative capacitance from the ferroelectric CuInP2S6has enabled the breaking of the 'Boltzmann tyranny'. The heterostructure based device has shown steep slopes switching below 60 mV dec-1(lowest to < 10 mV dec-1) over 3 orders of source-drain current, which provides an avenue for all 2D material based steep slope FETs.

Controllable high-performance memristors based on 2D Fe2GeTe3oxide for biological synapse imitation.

Memristors are an important component of the next-generation artificial neural network, high computing systems, etc. In the past, two-dimensional materials based memristors have achieved a high performance and low power consumption, though one at the cost of the other. Furthermore, their performance can not be modulated frequently once their structures are fixed, which remains the bottleneck in the development. Herein, a series of forming free memristors are fabricated with the same Cu/Fe3GeTe2oxide/Fe3GeTe2/Al structure, yet the On/Off ratio and set voltage is modulated continuously by varying the oxidation time during fabrication. With an optimal oxidation time, a large On/Off ratio (1.58 × 103) and low set voltage (0.74 V) is achieved in a single device. The formation and rapture of Al conductive filaments are found to be responsible for the memristors, and the filaments density and the cross-section area increase with the increase of current compliance, which achieves a higher On/Off ratio. The memristor can imitate basic biological synaptic functions using voltage pulses, demonstrating the potential for low-power consuming neuromorphic computing applications.

Unraveling the Origin of Sulfur-Doped Fe-N-C Single-Atom Catalyst for Enhanced Oxygen Reduction Activity: Effect of Iron Spin-State Tuning.

Heteroatom doped atomically dispersed Fe1 -NC catalysts have been found to show excellent activity toward oxygen reduction reaction (ORR). However, the origin of the enhanced activity is still controversial because the structure-function relationship governing the enhancement remains elusive. Herein, sulfur(S)-doped Fe1 -NC catalyst was obtained as a model, which displays a superior activity for ORR towards the traditional Fe-NC materials. 57 Fe Mössbauer spectroscopy and electron paramagnetic resonance spectroscopy revealed that incorporation of S in the second coordination sphere of Fe1 -NC can induce the transition of spin polarization configuration. Operando 57 Fe Mössbauer spectra definitively identified the low spin single-Fe3+ -atom of C-FeN4 -S moiety as the active site for ORR. Moreover, DFT calculations unveiled that lower spin state of the Fe center after the S doping promotes OH* desorption process. This work elucidates the underlying mechanisms towards S doping for enhancing ORR activity, and paves a way to investigate the function of broader heteroatom doped Fe1 -NC catalysts to offer a general guideline for spin-state-determined ORR.

The Electrophilicity of Surface Carbon Species in the Redox Reactions of CuO-CeO2 Catalysts.

Electronic metal-support interactions (EMSI) describe the electron flow between metal sites and a metal oxide support. It is generally used to follow the mechanism of redox reactions. In this study of CuO-CeO2 redox, an additional flow of electrons from metallic Cu to surface carbon species is observed via a combination of operando X-ray absorption spectroscopy, synchrotron X-ray powder diffraction, near ambient pressure near edge X-ray absorption fine structure spectroscopy, and diffuse reflectance infrared Fourier transform spectroscopy. An electronic metal-support-carbon interaction (EMSCI) is proposed to explain the reaction pathway of CO oxidation. The EMSCI provides a complete picture of the mass and electron flow, which will help predict and improve the catalytic performance in the selective activation of CO2 , carbonate, or carbonyl species in C1 chemistry.

Modelling the enthalpy change and transition temperature dependence of the metal-insulator transition in pure and doped vanadium dioxide.

We compare various calculation methods to determine the electronic structures and energy differences of the phases of VO2. We show that density functional methods in the form of GGA+U are able to describe the enthalpy difference (latent heat) between the rutile and M1 phases of VO2, and the effect of doping on the transition temperature and on the band gap of the M1 phase. An enthalpy difference of ΔE0 = -44.2 meV per formula unit, similar to the experimental value, is obtained if the randomly oriented spins of the paramagnetic rutile phase are treated by a non-collinear spin density functional calculation. The predicted change in the transition temperature of VO2 for Ge, Si or Mg doping is calculated and is in good agreement with the experiment data.

Gas Adsorption Investigation on SiGe Monolayer: A First-Principle Calculation.

The gas adsorption behaviors of CO, CO2, SO2, NO2, NO, NH3, H2, H2O, and O2 on SiGe monolayer are studied using the first-principles calculation method. Three special adsorption sites and different gas molecule orientations are considered. Based on adsorption energy, band gap, charge transfer, and the electron localization function, the appropriate physical adsorptions of SO2, NO, NH3, and O2 are confirmed. These gases possess excellent adsorption properties that demonstrate the obvious sensitiveness of SiGe monolayer to these gases. Moreover, SiGe may be used as a sensing material for some of them. NO2 adsorption in different adsorption sites can be identified as chemical adsorption. Besides, the external electric field can effectively modify the adsorption strength. The range of 0 ~ - 2 V/nm can create a desorption effect when NH3 adsorbs at the Ge site. The NH3 adsorption models on Ge site are chosen to investigate the properties of the I-V curve. Our theoretical results indicate that SiGe monolayer is a promising candidate for gas sensing applications.

Thickness dependent friction on few-layer MoS2, WS2, and WSe2.

Nanoscale friction on two-dimensional (2D) materials is closely associated with their mechanical, electronic and photonic properties, which can be modulated through changing thickness. Here, we investigated the thickness dependent friction on few-layer MoS2, WS2, and WSe2 using atomic force microscope at ambient condition and found two different behavior. When a sharp tip was used, the regular behavior of decreasing friction with increasing thickness was reproduced. However, when a pre-worn and flat-ended tip was used, we observed an abnormal trend: on WS2 and WSe2, friction increased monotonically with thickness, while for MoS2, friction decreased from monolayer to bilayer and then subsequently increased with thickness. As suggested by the density functional theory calculation, we hypothesize that the overall frictional behavior is a competition between the puckering effect and the intrinsic energy corrugation within the compressive region. By varying the relative strength of the puckering effect via changing the tip shape, the dependence of friction on sample thickness can be tuned. Our results also suggest a potential means to measure intrinsic frictional properties of 2D materials with minimum impact from puckering.

Calculation of metallic and insulating phases of V2O3 by hybrid density functionals.

The electronic structure of vanadium sesquioxide V2O3 in its different phases has been calculated using the screened exchange hybrid density functional. The hybrid functional accurately reproduces the experimental electronic properties of all three phases, the paramagnetic metal (PM) phase, the anti-ferromagnetic insulating phase, and the Cr-doped paramagnetic insulating (PI) phase. We find that a fully relaxed supercell model of the Cr-doped PI phase based on the corundum structure has a monoclinic-like local strain around the substitutional Cr atoms. This is found to drive the PI-PM transition, consistent with a Peierls-Mott transition. The PI phase has a calculated band gap of 0.15 eV, in good agreement with experiment.

Tunable Rashba effect in two-dimensional LaOBiS2 films: ultrathin candidates for spin field effect transistors.

Rashba spin splitting is a two-dimensional (2D) relativistic effect closely related to spintronics. However, so far there is no pristine 2D material to exhibit enough Rashba splitting for the fabrication of ultrathin spintronic devices, such as spin field effect transistors (SFET). On the basis of first-principles calculations, we predict that the stable 2D LaOBiS2 with only 1 nm of thickness can produce remarkable Rashba spin splitting with a magnitude of 100 meV. Because the medium La2O2 layer produces a strong polar field and acts as a blocking barrier, two counter-helical Rashba spin polarizations are localized at different BiS2 layers. The Rashba parameter can be effectively tuned by the intrinsic strain, while the bandgap and the helical direction of spin states sensitively depends on the external electric field. We propose an advanced Datta-Das SFET model that consists of dual gates and 2D LaOBiS2 channels by selecting different Rashba states to achieve the on-off switch via electric fields.

Experimental Study of Compatibility between the Eco-friendly Insulation Mixed Gas CF3SO2F/N2 and EPDM and CR Materials.

As a greenhouse gas with strong global warming potential, the use of SF6 needs to be reduced as much as possible. Researching environmentally friendly insulation (EFI) gases to replace SF6 in power electrical equipment is an effective way to reduce its usage. CF3SO2F/N2, as a newly proposed EFI gas, has certain potential to replace SF6. Compatibility of CF3SO2F/N2 gas with rubber sealing materials commonly used in electrical equipment is still unknown. In this article, the compatibility of CF3SO2F/N2 with the ethylene-propylene-diene monomer (EPDM) and chloroprene rubber (CR) was investigated experimentally. It was found that CF3SO2F/N2 would slightly decompose under the influence of EPDM and CR rubber under certain conditions. The surface morphology of EPDM changed slightly under the influence of CF3SO2F/N2, and it was similar to the influence of SF6. While the surface morphology of CR deteriorated significantly with obvious defects. The mechanical properties of EPDM were not significantly affected by CF3SO2F, which is similar to the influence of SF6. But CR was affected greatly by CF3SO2F gas. Permanent deformation compression and surface morphology are two effective indicators for characterizing the compatibility between gas and rubber sealing materials. This research provides a reference for the application of CF3SO2F/N2 as a new EFI gas in power equipment.

Unveiling Atomic-Scale Product Selectivity at the Cocatalyst-TiO2 Interface Using X-Ray Techniques: Insights into Interface Reactivity.

The microstructure at the interface between the cocatalyst and semiconductor plays a vital role in concentrating photo-induced carriers and reactants. However, observing the atomic arrangement of this interface directly using an electron microscope is challenging due to the coverings of the semiconductor and cocatalyst. To address this, multiple metal-semiconductor interfaces on three TiO2 crystal facets (M/TiO2 ─N, where M represents Ag, Au, and Pt, and N represents the 001, 010, and 101 single crystal facets). The identical surface atomic configuration of the TiO2 facets allowed us to investigate the evolution of the microstructure within these constructs using spectroscopies and DFT calculations. For the first time, they observed the transformation of saturated Ti6c ─O bonds into unsaturated Ti5c ─O and Ti6c ─O─Pt bonds on the TiO2 ─010 facet after loading Pt. This transformation have a direct impact on the selectivity of the resulting products, leading to the generation of CO and CH4 at the Ti6c ─O─Pt and Pt sites, respectively. These findings pinpoint the pivotal roles played by the atomic arrangement at the M/TiO2 ─N interfaces and provide valuable insights for the development of new methodologies using conventional lab-grade equipment.

Heterometallic Electrocatalysts Derived from High-Nuclearity Metal Clusters for Efficient Overall Water Splitting.

The development of cost-effective electrocatalysts with an optimal surface affinity for intermediates is essential for sustainable hydrogen fuel production, but this remains insufficient. Here we synthesize Ni2P/MoS2-CoMo2S4@C heterometallic electrocatalysts based on the high-nuclearity cluster {Co24(TC4A)6(MoO4)8Cl6}, in which Ni2P nanoparticles were anchored to the surface of the MoS2-CoMo2S4@C nanosheets via strong interfacial interactions. Theoretical calculations revealed that the introduction of Ni2P phases induces significant disturbances in the surface electronic configuration of Ni2P/MoS2-CoMo2S4@C, resulting in more relaxed d-d orbital electron transfers between the metal atoms. Moreover, continuous electron transport was established by the formation of multiple heterojunction interfaces. The optimized Ni2P/MoS2-CoMo2S4@C electrocatalyst exhibited ultralow overpotentials of 198 and 73 mV for oxygen and hydrogen evolution reactions, respectively, in alkaline media, at 10 mA cm-2. The alkali electrolyzer constructed using Ni2P/MoS2-CoMo2S4@C required a cell voltage of only 1.45 V (10 mA cm-2) to drive overall water splitting with excellent long-term stability.

Theoretical Insight into the Band Alignment at High-κ Oxide XO2/Diamond (X = Hf and Zr) Interfaces with a SiO2 Interlayer for MOS Devices.

Diamond has become a promising candidate for high-power devices based on its ultrawide bandgap and excellent thermoelectric properties, where an appropriate gate dielectric has been a bottleneck hindering the development of diamond devices. Herein, we have systematically investigated the structural arrangement and electronic properties of diamond/high-κ oxide (HfO2, ZrO2) heterojunctions by first-principles calculations with a SiO2 interlayer. Charge analysis reveals that the C-Si bonding interface attracts a large amount of charge concentrated at the diamond interface, indicating the potential for the formation of a 2D hole gas (2DHG). The diamond/HfO2 and diamond/ZrO2 heterostructures exhibit similar "Type II" band alignments with VBOs of 2.47 and 2.21 eV, respectively, which is consistent with experimental predictions. The introduction of a SiO2 dielectric layer into the diamond/SiO2/high-κ stacks exhibits the typical "Type I″ straddling band offsets (BOs). In addition, the wide bandgap SiO2 interlayer keeps the valence band maximum (VBM) and conduction band minimum (CBM) in the stacks away from those of diamond, effectively confining the electrons and holes in MOS devices. This work exhibits the potential of SiO2/high-κ oxide gate dielectrics for diamond devices and provides theoretical insights into the rational design of high-quality gate dielectrics for diamond-based MOS device applications.

High-Accuracy Neural Network Interatomic Potential for Silicon Nitride.

In the field of machine learning (ML) and data science, it is meaningful to use the advantages of ML to create reliable interatomic potentials. Deep potential molecular dynamics (DEEPMD) are one of the most useful methods to create interatomic potentials. Among ceramic materials, amorphous silicon nitride (SiNx) features good electrical insulation, abrasion resistance, and mechanical strength, which is widely applied in industries. In our work, a neural network potential (NNP) for SiNx was created based on DEEPMD, and the NNP is confirmed to be applicable to the SiNx model. The tensile tests were simulated to compare the mechanical properties of SiNx with different compositions based on the molecular dynamic method coupled with NNP. Among these SiNx, Si3N4 has the largest elastic modulus (E) and yield stress (σs), showing the desired mechanical strength owing to the largest coordination numbers (CN) and radial distribution function (RDF). The RDFs and CNs decrease with the increase of x; meanwhile, E and σs of SiNx decrease when the proportion of Si increases. It can be concluded that the ratio of nitrogen to silicon can reflect the RDFs and CNs in micro level and macro mechanical properties of SiNx to a large extent.

High-Throughput Screening of Gas Sensor Materials for Decomposition Products of Eco-Friendly Insulation Medium by Machine Learning.

Nowadays, trifluoromethyl sulfonyl fluoride (CF3SO2F) has shown great potential to replace SF6 as an eco-friendly insulation medium in the power industry. In this work, an effective and low-cost design strategy toward ideal gas sensors for the decomposed gas products of CF3SO2F was proposed. The strategy achieved high-throughput screening from a large candidate space based on first-principle calculation and machine learning (ML). The candidate space is made up of different transition metal-embedded graphic carbon nitrides (TM/g-C3N4) owing to their high surface area and subtle electronic structure. Four main noteworthy decomposition gases of CF3SO2F, namely, CF4, SO2, SO2F2, and HF, as well as their initial stable structure on TM/g-C3N4 were determined. The best-performing ML model was established and implemented to predict the interaction strength between gas products and TM/g-C3N4, thus determining the promising gas-sensing materials for target gases with the requirements of interaction strength, recovery time, sensitivity, and selectivity. Further analysis guarantees their stability and reveals the origin of excellent properties as a gas sensor. The high-throughput strategy opens a new avenue of rational and low-cost design principles of desirable gas-sensing materials in an interdisciplinary view.