RESUMEN
The macroscopic coherence in superconductors supports dissipationless supercurrents that could play a central role in emerging quantum technologies. Accomplishing unequal supercurrents in the forward and backward directions would enable unprecedented functionalities. This nonreciprocity of critical supercurrents is called the superconducting (SC) diode effect. We demonstrate the strong SC diode effect in conventional SC thin films, such as niobium and vanadium, employing external magnetic fields as small as 1 Oe. Interfacing the SC layer with a ferromagnetic semiconductor EuS, we further accomplish the nonvolatile SC diode effect reaching a giant efficiency of 65%. By careful control experiments and theoretical modeling, we demonstrate that the critical supercurrent nonreciprocity in SC thin films could be easily accomplished with asymmetrical vortex edge and surface barriers and the universal Meissner screening current governing the critical currents. Our engineering of the SC diode effect in simple systems opens the door for novel technologies while revealing the ubiquity of the Meissner screening effect induced SC diode effect in superconducting films, and it should be eliminated with great care in the search for exotic superconducting states harboring finite-momentum Cooper pairing.
RESUMEN
We investigate in situ ion diffusion in vanadium dioxide (VO2) nanowires (NWs) by using photocurrent imaging. Alkali metal ions are injected into a NW segment via ionic liquid gating and are shown to diffuse along the NW axis. The visualization of ion diffusion is realized by spatially resolved photocurrent measurements, which detect the charge carrier density change associated with the ion incorporation. Diffusion constants are determined to be on the order of 10-10 cm2/s for both Li+ and Na+ ions at room temperature, while H+ diffuses much slower. The ion diffusion is also found to occur mainly at the surface of the NWs, as metal contacts can effectively block the ion diffusion. This novel method of visualizing ion distribution is expected to be applied to study ion diffusion in a broad range of materials, providing key insights on phase transition electronics and energy storage applications.
RESUMEN
We investigate solution-grown single-crystal methylammonium lead iodide (MAPbI3) nanowires and nanoplates with spatially resolved photocurrent mapping. Sensitive perovskite photodetectors with Schottky contacts are fabricated by directly transferring the nanostructures on top of prepatterned gold electrodes. Scanning photocurrent microscopy (SPCM) measurements on these single-crystal nanostructures reveal a minority charge carrier diffusion length up to 21 µm, which is significantly longer than the values observed in polycrystalline MAPbI3 thin films. When the excitation energy is close to the bandgap, the photocurrent becomes substantially stronger at the edges of nanostructures, which can be understood by the enhancement of light coupling to the nanostructures. These perovskite nanostructures with long carrier diffusion lengths and strong photonic enhancement not only provide an excellent platform for studying their intrinsic properties but may also boost the performance of perovskite-based optoelectronic devices.
RESUMEN
Multiple magnetic skyrmion phases add an additional degree of freedom for skyrmion-based ultrahigh-density spin memory devices. Extending the field to 2D van der Waals magnets is a rewarding challenge, where the realizable degree of freedoms (e.g., thickness, twist angle, and electrical gating) and high skyrmion density result in intriguing new properties and enhanced functionality. In this work, a van der Waals interface, formed by two 2D ferromagnets Cr2 Ge2 Te6 and Fe3 GeTe2 with a Curie temperature of ≈65 and ≈205 K, respectively, hosting two groups of magnetic skyrmions, is reported. Two sets of topological Hall effect signals are observed below 6s0 K when Cr2 Ge2 Te6 is magnetically ordered. These two groups of skyrmions are directly imaged using magnetic force microscopy, and supported by micromagnetic simulations. Interestingly, the magnetic skyrmions persist in the heterostructure with zero applied magnetic field. The results are promising for the realization of skyrmionic devices based on van der Waals heterostructures hosting multiple skyrmion phases.
RESUMEN
Topological insulator (TI) nanoribbons (NRs) provide a platform for investigating quantum interference oscillations combined with topological surface states. One-dimensional subbands formed along the perimeter of a TI NR can be modulated by an axial magnetic field, exhibiting Aharonov-Bohm (AB) and Altshuler-Aronov-Spivak (AAS) oscillations of magnetoconductance (MC). Using Sb-doped Bi2Se3 TI NRs, we found that the relative amplitudes of the two quantum oscillations can be tuned by varying the channel length, exhibiting crossover from quasi-ballistic to diffusive transport regimes. The AB and AAS oscillations were discernible even for a 70 µm long channel, while only the AB oscillations were observed for a short channel. Analyses based on ensemble-averaged fast Fourier transform of MC curves revealed exponential temperature dependences of the AB and AAS oscillations, from which the circumferential phase-coherence length and thermal length were obtained. Our observations indicate that the channel length in a TI NR can be a useful control knob for tailored quantum interference oscillations, especially for developing topological hybrid quantum devices.
RESUMEN
We investigate temperature-dependent photogenerated carrier diffusion in single-crystal methylammonium lead iodide microstuctures via scanning photocurrent microscopy. Carrier diffusion lengths increased abruptly across the tetragonal to orthorhombic phase transition and reached 200 ± 50 µm at 80 K. In combination with the microsecond carrier lifetime measured by a transient photocurrent method, an enormous carrier mobility value of 3 × 104 cm2/V s was extracted at 80 K. The observed highly nonlocal photocurrent and the rapid increase of the carrier diffusion length at low temperatures can be understood by the formation and efficient transport of free excitons in the orthorhombic phase as a result of reduced optical phonon scattering due to the dipolar nature of the excitons. Carrier diffusion lengths were tuned by a factor of 8 by gate voltage and increased with increasing majority carrier (electron) concentration, consistent with the exciton model.
RESUMEN
Aharonov-Bohm conductance oscillations emerge as a result of gapless surface states in topological insulator nanowires. This quantum interference accompanies a change in the number of transverse one-dimensional modes in transport, and the density of states of such nanowires is also expected to show Aharonov-Bohm oscillations. Here, we demonstrate a novel characterization of topological phase in Bi2Se3 nanowire via nanomechanical resonance measurements. The nanowire is configured as an electromechanical resonator such that its mechanical vibration is associated with its quantum capacitance. In this way, the number of one-dimensional transverse modes is reflected in the resonant frequency, thereby revealing Aharonov-Bohm oscillations. Simultaneous measurements of DC conductance and mechanical resonant frequency shifts show the expected oscillations, and our model based on the gapless Dirac fermion with impurity scattering explains the observed quantum oscillations successfully. Our results suggest that the nanomechanical technique would be applicable to a variety of Dirac materials.
RESUMEN
Excitons are spin integer particles that are predicted to condense into a coherent quantum state at sufficiently low temperature. Here by using photocurrent imaging we report experimental evidence of formation and efficient transport of non-equilibrium excitons in Bi2-xSbxSe3 nanoribbons. The photocurrent distributions are independent of electric field, indicating that photoexcited electrons and holes form excitons. Remarkably, these excitons can transport over hundreds of micrometers along the topological insulator (TI) nanoribbons before recombination at up to 40 K. The macroscopic transport distance, combined with short carrier lifetime obtained from transient photocurrent measurements, indicates an exciton diffusion coefficient at least 36 m2 s-1, which corresponds to a mobility of 6 × 104 m2 V-1 s-1 at 7 K and is four order of magnitude higher than the value reported for free carriers in TIs. The observation of highly dissipationless exciton transport implies the formation of superfluid-like exciton condensate at the surface of TIs.